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Infineon Technologies AG IRF5305STRLPBF MOSFET P-CH 55V 31A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF5305STRLPBF	Cut Tape	8,988		1	1 $2.24 10 $1.438 100 $2.24 1000 $2.24 10000 $2.24	Buy Now
	IRF5305STRLPBF	Digi-Reel	8,988		1	1 $2.24 10 $1.438 100 $2.24 1000 $2.24 10000 $2.24	Buy Now
	IRF5305STRLPBF	Reel	8,800		800	1 - 10 - 100 - 1000 $0.73593 10000 $0.615	Buy Now
Avnet Americas	IRF5305STRLPBF	Reel	1,600	8 Weeks	1,600	1 - 10 - 100 - 1000 - 10000 $0.48786	Buy Now
	IRF5305STRLPBF	Ammo Pack			1	1 $1.55 10 $1.29 100 $1.03 1000 $1.03 10000 $1.03	Buy Now
Mouser Electronics	IRF5305STRLPBF		6,184			1 $1.78 10 $1.24 100 $0.909 1000 $0.628 10000 $0.6	Buy Now
Newark	IRF5305STRLPBF	Cut Tape	37		1	1 $1.58 10 $1.58 100 $1.58 1000 $1.58 10000 $1.58	Buy Now
	IRF5305STRLPBF	Reel			1,600	1 - 10 - 100 - 1000 - 10000 $1.05	Buy Now
TME	IRF5305STRLPBF		800		1	1 $1.382 10 $1.093 100 $0.779 1000 $0.58 10000 $0.58	Buy Now

Chip 1 Exchange	IRF5305STRLPBF		4,369			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	IRF5305STRLPBF	Cut Tape	12,775			1 $1.8 10 $1.15 100 $0.786 1000 $0.488 10000 $0.448	Buy Now
EBV Elektronik	IRF5305STRLPBF		142,400	9 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRF5305STRLPBF		113,600		1	1 - 10 - 100 - 1000 $1.58 10000 $1.58	Buy Now
Win Source Electronics	IRF5305STRLPBF		25,600			1 - 10 - 100 $0.6642 1000 $0.5143 10000 $0.5143	Buy Now
Infineon Technologies AG IRF530NPBF MOSFET N-CH 100V 17A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF530NPBF	Tube	6,872		1	1 $1.42 10 $1.42 100 $1.42 1000 $0.42407 10000 $0.34009	Buy Now
Avnet Americas	IRF530NPBF	Tube	15,326	18 Weeks	1	1 $0.3136 10 $0.312 100 $0.26664 1000 $0.26664 10000 $0.26664	Buy Now
	IRF530NPBF	Bulk		17 Weeks, 5 Days	1	1 $1.02 10 $0.727 100 $0.658 1000 $0.478 10000 $0.478	Buy Now
Mouser Electronics	IRF530NPBF		578			1 $1.04 10 $0.656 100 $0.587 1000 $0.4 10000 $0.351	Buy Now
Newark	IRF530NPBF	Bulk	2,016		1	1 $1.02 10 $0.727 100 $0.658 1000 $0.478 10000 $0.407	Buy Now
RS	IRF530NPBF	Bulk	2		1	1 $0.94 10 $0.8 100 $0.73 1000 $0.66 10000 $0.66	Buy Now

TME	IRF530NPBF		93		1	1 $0.799 10 $0.527 100 $0.485 1000 $0.357 10000 $0.315	Buy Now
Chip One Stop	IRF530NPBF	Tube	4			1 - 10 $0.832 100 $0.832 1000 $0.832 10000 $0.832	Buy Now
CoreStaff Co Ltd	IRF530NPBF		4			1 $0.35 10 $0.3 100 $0.28 1000 $0.28 10000 $0.28	Buy Now
EBV Elektronik	IRF530NPBF		11,000	19 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRF530NPBF		4,000		1	1 - 10 - 100 - 1000 $0.8742 10000 $0.809	Buy Now
Win Source Electronics	IRF530NPBF		24,480			1 - 10 - 100 $0.5092 1000 $0.3943 10000 $0.3943	Buy Now
Vishay Siliconix IRF530PBF MOSFET N-CH 100V 14A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF530PBF	Tube	5,144		1	1 $1.95 10 $1.95 100 $1.95 1000 $0.60888 10000 $0.5065	Buy Now
RS	IRF530PBF	Bulk			1,000	1 - 10 - 100 - 1000 $1.3 10000 $1.24	Get Quote
New Advantage Corporation	IRF530PBF		10,950		1	1 - 10 - 100 - 1000 $0.6571 10000 $0.6571	Buy Now
Vishay Siliconix IRF530STRLPBF MOSFET N-CH 100V 14A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF530STRLPBF	Cut Tape	3,053		1	1 $2.46 10 $1.583 100 $2.46 1000 $2.46 10000 $2.46	Buy Now
	IRF530STRLPBF	Digi-Reel	3,053		1	1 $2.46 10 $1.583 100 $2.46 1000 $2.46 10000 $2.46	Buy Now
	IRF530STRLPBF	Reel	2,400		800	1 - 10 - 100 - 1000 $0.81923 10000 $0.69875	Buy Now
UMW IRF5305STRL MOSFET P-CH 55V 31A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF5305STRL	Reel	800		800	1 - 10 - 100 - 1000 $0.44458 10000 $0.375	Buy Now
	IRF5305STRL	Digi-Reel	800		1	1 $1.25 10 $0.839 100 $1.25 1000 $1.25 10000 $1.25	Buy Now
	IRF5305STRL	Cut Tape	800		1	1 $1.25 10 $0.839 100 $1.25 1000 $1.25 10000 $1.25	Buy Now

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IRF53 Datasheets (264)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF530	Fairchild Semiconductor	14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs	Original	PDF
IRF530	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF530	On Semiconductor	N-Channel Enhancement-Mode Silicon Gate	Original	PDF
IRF530	STMicroelectronics	N-channel power MOSFET, 20 A, 100V.	Original	PDF
IRF530	STMicroelectronics	N-Channel ENHANCEMENT MODE POWER MOS TRANSISTOR	Original	PDF
IRF530	STMicroelectronics	N-CHANNEL 100V - 0.115 ? - 14A TO-220 LOW GATE	Original	PDF
IRF530	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF530	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A TO-220AB	Original	PDF
IRF530	Fairchild Semiconductor	N-Channel Power MOSFETs, 20 A, 60-100 V	Scan	PDF
IRF530	FCI	POWER MOSFETs	Scan	PDF
IRF530	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF530	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRF530	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A.	Scan	PDF
IRF530	Harris Semiconductor	N-channel Power Mosfets Avalanche Energy Rated	Scan	PDF

IRF530	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF530	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRF530	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRF530	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF530	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 100V, 14A, Pkg Style TO-220AB	Scan	PDF
IRF530	Motorola	European Master Selection Guide 1986	Scan	PDF

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IRF53 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF530S Abstract: SiHF530S SiHF530S-E3 910-20-11 Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21	Original	IRF530S, SiHF530S O-263) 2002/95/EC 11-Mar-11 IRF530S SiHF530S-E3 910-20-11	PDF
AN-994 Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator Text: PD - 91352B IRF530NS IRF530NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description	Original	91352B IRF530NS IRF530NL EIA-418. AN-994 IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator	PDF
Untitled Abstract: No abstract text available Text: PD- 95982 IRF530SPbF Lead-Free Document Number: 91020 12/21/04 www.vishay.com 1 IRF530SPbF Document Number: 91020 www.vishay.com 2 IRF530SPbF Document Number: 91020 www.vishay.com 3 IRF530SPbF Document Number: 91020 www.vishay.com 4 IRF530SPbF Document Number: 91020	Original	IRF530SPbF 08-Mar-07	PDF
Untitled Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
IRF530SPBF Abstract: IRF530S SiHF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRF530S, SiHF530S O-263) 18-Jul-08 IRF530SPBF IRF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL	PDF
IRF5305 Abstract: No abstract text available Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier	Original	91385B IRF5305 O-220 IRF5305	PDF
IRF530N Abstract: 4.5v to 100v input regulator Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International	Original	IRF530N O-220 O-220AB IRF530N 4.5v to 100v input regulator	PDF
IRF530N Abstract: AN7254 AN7260 AN9321 AN9322 TB334 Text: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER	Original	IRF530N O-220AB IRF530N AN7254 AN7260 AN9321 AN9322 TB334	PDF
IRF530N Abstract: 4.5V TO 100V INPUT REGULATOR Text: PD - 91351 IRF530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description Advanced HEXFET® Power MOSFETs from International	Original	IRF530N O-220 IRF530N 4.5V TO 100V INPUT REGULATOR	PDF
Untitled Abstract: No abstract text available Text: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating	Original	IRF530NS IRF530NL IRF530NL) EIA-418.	PDF
Untitled Abstract: No abstract text available Text: IRF5305S/L l l l l l l l Advanced Process Technology Surface Mount IRF5305S Low-profile through-hole (IRF5305L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of	Original	IRF5305S/L IRF5305S) IRF5305L) O-263 O-262	PDF
DM 321 Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530 Text: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate	Original	IRF530 IRF530, RF1S530SM DM 321 IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530	PDF
IRF530N Abstract: IRF530N applications Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ	Original	IRF530N O220AB) IRF530N IRF530N applications	PDF
IRF530 vishay Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 O-220 O-220 18-Jul-08 IRF530 vishay IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P	PDF

Untitled Abstract: No abstract text available Text: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	IRF530 300ns, 530nH,	PDF
IRF5305L Abstract: IRF5305S Text: PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω	Original	91386C IRF5305S/L IRF5305S) IRF5305L) IRF5305L IRF5305S	PDF
IRF530 Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530 Text: ZETEX S EMI CONDUCT ORS W D T=] 70S7f i DDDSSSb 1 95D 0 5 5 5 6 IRF530 IRF531 IRF532 IRF533 N-channel enhancement mode vertical DMOS PET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	70S7f IRF530 IRF531 IRF532 IRF533 O-220 IRF533 1RF533 t5d 58 reliability irf530 irf-530	PDF
2CS-42724 Abstract: RRF530 S33R IRF530R IRF531R IRF532R IRF533R TC. 12A MOSFET Drivers Text: _ Rugged Power MOSFETs File Number 1993 IRF530R, IRF531R, IRF532R, IRF533R Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs on = 0.18CÎ and 0 .2 5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated	OCR Scan	IRF530R, IRF531R, IRF532R, IRF533R 0V-100V IRF532R IRF533R 2CS-42724 2CS-42724 RRF530 S33R IRF530R IRF531R TC. 12A MOSFET Drivers	PDF
Untitled Abstract: No abstract text available Text: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì	OCR Scan	IRF530NS) IRF530NL) PD-91352A IRF530NS/L	PDF
RF530 Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530 Text: he o \| qassqss 0000450 1 \| Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS	OCR Scan	T-39-11 IRF530 IRF531 IRF532 IRF533Î O-220AB IRF530, IRF531, IRF532, IRF533 RF530 1RF530 IRF530 HEXFET TRANSISTORS IR IRF532 1RF531 TYN 058 LIRF530	PDF
D84DL2 Abstract: IRF530 N-Channel fet Text: IRF530,531 D84DL2,K2 Ftrnr HELD EFFECT POWER TRANSISTOR 114.0 AMPERES 100, 60 VOLTS R[ S ON) = 0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.	OCR Scan	IRF530 D84DL2 100ms TC-25Â IRF530/D84DL2 IRF531/D84DK2 N-Channel fet	PDF
Untitled Abstract: No abstract text available Text: I i .•_ I PRELIMINARY International I R Rectifier P D 9 .1 3 8 5 IRF5305 HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Vdss = -55 V	OCR Scan	IRF5305 6C413 554S2 D024242	PDF
irf530 Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	IRF530/531 IRF530 IRF531 Q02fl755 irf530	PDF
IRF530 Abstract: No abstract text available Text: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements	OCR Scan	IRF530 O-220 T0-220 IRF530	PDF

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IRF53 Price and Stock

Infineon Technologies AG IRF5305STRLPBF

Infineon Technologies AG IRF530NPBF

Vishay Siliconix IRF530PBF

Vishay Siliconix IRF530STRLPBF

UMW IRF5305STRL

IRF53 Datasheets (264)

IRF53 Datasheets Context Search

IRF530S

AN-994

Untitled

Untitled

IRF530SPBF

IRF5305

IRF530N

IRF530N

IRF530N

Untitled

Untitled

DM 321

IRF530N

IRF530 vishay

Untitled

IRF5305L

IRF530

2CS-42724

Untitled

RF530

D84DL2

Untitled

irf530

IRF530