IPB1 Search Results
IPB1 Price and Stock
Infineon Technologies AG IPB144N12N3GATMA1MOSFET N-CH 120V 56A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB144N12N3GATMA1 | Cut Tape | 4,046 | 1 |
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IPB144N12N3GATMA1 | Reel | 16 Weeks | 1,000 |
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IPB144N12N3GATMA1 | Cut Tape | 566 | 1 |
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IPB144N12N3GATMA1 | 2,646 |
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IPB144N12N3GATMA1 | 1,322 | 1 |
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IPB144N12N3GATMA1 | 17 Weeks | 1,000 |
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Infineon Technologies AG IPB180N04S400ATMA1MOSFET N-CH 40V 180A TO263-7 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB180N04S400ATMA1 | Cut Tape | 3,937 | 1 |
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IPB180N04S400ATMA1 | Reel | 12 Weeks | 1,000 |
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IPB180N04S400ATMA1 | 3,799 |
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IPB180N04S400ATMA1 | 4,082 | 1 |
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IPB180N04S400ATMA1 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB123N10N3GATMA1MOSFET N-CH 100V 58A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB123N10N3GATMA1 | Cut Tape | 3,254 | 1 |
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IPB123N10N3GATMA1 | 750 | 1 |
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IPB123N10N3GATMA1 | 1 |
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IPB123N10N3GATMA1 | Cut Tape | 1,960 |
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IPB123N10N3GATMA1 | 4,000 | 17 Weeks | 1,000 |
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IPB123N10N3GATMA1 | 3,000 | 1 |
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Infineon Technologies AG IPB180P04P403ATMA2MOSFET P-CH 40V 180A TO263-7 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB180P04P403ATMA2 | Cut Tape | 1,741 | 1 |
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IPB180P04P403ATMA2 | Reel | 3,000 | 12 Weeks | 1,000 |
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IPB180P04P403ATMA2 | 5,658 |
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IPB180P04P403ATMA2 | Cut Tape | 9,243 | 1 |
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IPB180P04P403ATMA2 | 1,156 | 1 |
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IPB180P04P403ATMA2 | Cut Tape | 965 |
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Infineon Technologies AG IPB180N10S402ATMA1MOSFET N-CH 100V 180A TO263-7 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB180N10S402ATMA1 | Digi-Reel | 1,459 | 1 |
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IPB180N10S402ATMA1 | Reel | 1,000 | 12 Weeks | 1,000 |
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IPB180N10S402ATMA1 | 1,351 |
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IPB180N10S402ATMA1 | Cut Tape | 6,545 | 1 |
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IPB180N10S402ATMA1 | 2,680 | 1 |
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IPB180N10S402ATMA1 | Cut Tape | 1,808 |
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IPB180N10S402ATMA1 | 13 Weeks | 1,000 |
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IPB1 Datasheets (145)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB100N04S2-04 |
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OptiMOS Power-Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S204ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S204ATMA4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S2L-03 |
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OptiMOS Power-Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S2L03ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S2L03ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S3-03 |
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Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.5 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S303ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S4-H2 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S4H2ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S2-05 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S205ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S205ATMA4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S2L-05 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB100N06S2L05ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S2L05ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S3-03 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S3-03 |
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OptiMOS -T Power-Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S3-04 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S3L-03 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original |
IPB1 Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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PN04L03
Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
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IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 | |
120N06N
Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
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IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng | |
16cn10n
Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
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IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n 16cn10 D53A PG-TO220-3 16CN1 | |
IPB120N06N
Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
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IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 | |
14N03LA
Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
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IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA | |
147N12N
Abstract: No abstract text available
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IPB144N12N3 IPI147N12N3 IPP147N12N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 144N12N 147N12N | |
107n20n
Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3
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IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3 | |
12CN10N
Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10
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IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10 | |
4N06H1
Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode
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IPB180N06S4-H1 PG-TO263-7-3 4N06H1 4N06H1 IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode | |
10n03l
Abstract: smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD
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IPP10N03L IPB10N03L Q67042-S4040 10N03L Q67040-S4346 10n03l smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD | |
15n03l
Abstract: 15N03 IPB15N03L ANPS071E IPP15N03L F42A
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IPP15N03L IPB15N03L Q67042-S4039 15N03L Q67040-S4344 15n03l 15N03 IPB15N03L ANPS071E IPP15N03L F42A | |
3QN0402
Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04
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IPB180N04S3-02 PG-TO263-7-3 3QN0402 14300pF 3900pF 710pF 245nC 210nC 3QN0402 PG-TO263-7-3 IPB180N04S3-02 ipb180n04 | |
marking D78
Abstract: smd diode marking 78A
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IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A | |
A1502
Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
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IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13 | |
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16CNE8N
Abstract: IPP16CNE8N
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IPB16CNE8N IPI16CNE8N IPD16CNE8N IPP16CNE8N PG-TO263-3 16CNE8N 16CNE8N | |
4N04H1
Abstract: IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking
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IPB160N04S4-H1 PG-TO263-7-3 4N04H1 4N04H1 IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking | |
12CN10N
Abstract: No abstract text available
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Original |
IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N | |
4N06H1
Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2
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IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 | |
3PN0604
Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
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IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 | |
marking eb5
Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
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IPP139N08N3 IPI139N08N3 IPB136N08N3 65AE5 marking eb5 diode marking eb5 EB5 MARKING marking G9 i95B | |
IPP17N25S3-100
Abstract: No abstract text available
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Original |
IPB17N25S3-100 IPP17N25S3-100 PG-TO263-3-2 PG-TO220-3-1 3N25100 IPP17N25S3-100 | |
107n20n
Abstract: No abstract text available
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Original |
IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n | |
marking 6d
Abstract: IPP147N12N
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Original |
IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N | |
B581C
Abstract: No abstract text available
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OCR Scan |
uPB1508GV PB1508GV /iPB1508G PB584G B581C |