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    4N04H1

    Abstract: IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking
    Text: IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on 1.6 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPB160N04S4-H1 PG-TO263-7-3 4N04H1 4N04H1 IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking

    4N04H1

    Abstract: PG-TO263-7-3 IPB160N04S4-H1
    Text: IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on 1.6 mΩ ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		PDF IPB160N04S4-H1 PG-TO263-7-3 4N04H1 4N04H1 PG-TO263-7-3 IPB160N04S4-H1