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    ANPS071E Search Results

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    2n0404

    Abstract: No abstract text available
    Text: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 IPP80N04S2-04 PG-TO263-3-2 2n0404

    PN04L03

    Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
    Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42

    3N0609

    Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
    Text: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88715 3N0609 smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88004 3N06L06 marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06

    2N04L03

    Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
    Text: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N04S2L-03 IPP80N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-20158 2N04L03 2N04L03 IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    DIODE H5 SMD

    Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package


    Original     		PDF SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, DIODE H5 SMD 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5

    2N06L06

    Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
    Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated


    Original     		PDF SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 Q67060-S6034 2N06L06 BSPP80N06S2L-06 BSPB80N06S2L-06, 2N06L06 DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a

    ANPS071E

    Abstract: IEC61249-2-21 SPB100N03S2-03 SPP100N03S2-03
    Text: SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ 100 ID • Excellent Gate Charge x RDS(on) product (FOM) A P-TO263 -3 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPB100N03S2-03G P-TO263 IEC61249-2-21 SPB100N03S2-03 PN0303 SPP100N03S2-03 O263-3 ANPS071E IEC61249-2-21 SPB100N03S2-03 SPP100N03S2-03

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 30 V R DS on 10 m ID 30 A P- TO252 -3-11  Low On-Resistance RDS(on)  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10

    2n0607

    Abstract: 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818
    Text: IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18818 2N0607 2n0607 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-08 PG-TO252-3-11 3N06L08 g51 smd 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L

    3N0625

    Abstract: ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2
    Text: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 24.8 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0625 IPI25N06S3-25 3N0625 ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2

    3N0607

    Abstract: IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004
    Text: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0607 IPI80N06S3-07 3N0607 IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004

    4N03L04

    Abstract: ANPS071E IPD70N03S4L-04 PG-TO252-3-11
    Text: IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 4.3 mΩ ID 70 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD70N03S4L-04 PG-TO252-3-11 4N03L04 4N03L04 ANPS071E IPD70N03S4L-04 PG-TO252-3-11

    smd diode code F45

    Abstract: ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd
    Text: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 15.4 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0616 IPI45N06S3-16 smd diode code F45 ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd

    2N03L10

    Abstract: marking g54 PG-TO252-3-11 ANPS071E IPD30N03S2L-10
    Text: IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 10 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


    Original     		PDF IPD30N03S2L-10 PG-TO252-3-11 2N03L10 2N03L10 marking g54 PG-TO252-3-11 ANPS071E IPD30N03S2L-10

    3N06L05

    Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L05 IPI80N06S3L-05 3N06L05 smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23

    QN06L05

    Abstract: ANPS071E IPD90N06S3L-05 PG-TO252-3-11
    Text: IPD90N06S3L-05 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 5 mΩ ID 90 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD90N06S3L-05 PG-TO252-3-11 QN06L05 QN06L05 ANPS071E IPD90N06S3L-05 PG-TO252-3-11

    IPD80N06S3-09

    Abstract: ANPS071E PG-TO252-3-11
    Text: IPD80N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 8.4 mΩ ID 80 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD80N06S3-09 PG-TO252-3-11 QN0609 IPD80N06S3-09 ANPS071E PG-TO252-3-11

    3N0403

    Abstract: IPB80N04S3-03 PG-TO263-3-2 ANPS071E IPI80N04S3-03 IPP80N04S3-03 J3205
    Text: IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0403 IPI80N04S3-03 3N0403 IPB80N04S3-03 PG-TO263-3-2 ANPS071E IPI80N04S3-03 IPP80N04S3-03 J3205

    2N03L20

    Abstract: 2n03l ANPS071E IPD30N03S2L-20 PG-TO252-3-11
    Text: IPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 20 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


    Original     		PDF IPD30N03S2L-20 PG-TO252-3-11 2N03L20 2N03L20 2n03l ANPS071E IPD30N03S2L-20 PG-TO252-3-11

    3N06L06

    Abstract: ANPS071E IPD50N06S3L-06 PG-TO252-3-11
    Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-06 PG-TO252-3-11 3N06L06 3N06L06 ANPS071E IPD50N06S3L-06 PG-TO252-3-11

    3N0607

    Abstract: ANPS071E IPD50N06S3-07 PG-TO252-3-11
    Text: IPD50N06S3-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.9 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3-07 PG-TO252-3-11 3N0607 3N0607 ANPS071E IPD50N06S3-07 PG-TO252-3-11