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    81B75 Price and Stock

    Integrated Silicon Solution Inc IS61LF204818B-7.5TQLI-TR

    SRAM 36Mb,Flow-Through,Sync,2Mb x 18,6.5 or 7.5ns,3.3V or 2.5V I/O,100 Pin TQFP, RoHS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IS61LF204818B-7.5TQLI-TR
    • 1 -
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    • 100 -
    • 1000 $61.13
    • 10000 $61.13
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    Standex-Meder Electronics MK08-1B75-500W

    Reed Switch, 38-45At, 0.5A, Spst, Cable; Product Range:Mk08 Series; Contact Configuration:Spst-Nc; Switch Mounting:Cable Mount; Contact Current Max:500Ma; Switching Voltage Max:400V; Switching Power Max:10W; Contact Resistance Rohs Compliant: Yes |Standexmeder MK08-1B75-500W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MK08-1B75-500W Bulk 1
    • 1 $54.77
    • 10 $48.82
    • 100 $41.58
    • 1000 $36.75
    • 10000 $36.75
    		Buy Now

    Qualcomm RFFE Filter Products B39781B7553L210

    SAW RX FILTER 4G/5G BAND N28 (Alt: B39781B7553L210)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia B39781B7553L210 16 Weeks 5,000
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    Qualcomm RFFE Filter Products B39781B7502P810

    B28 RX FB FILTER (Alt: B39781B7502P810)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia B39781B7502P810 16 Weeks 5,000
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    81B75 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: # #  ! !   #   ! !   #   ! !   B< "%&$!"#  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 H* 9H"[Z# @B? 4E3 D &  , 9H ( J *  , ? >=1H-(    )*&+ Y" ' -0 6


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    Abstract: No abstract text available
    Text: $ $  " "   $   " "   b "%&$!"#  $ ;B 1 ='=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D &  9H )( J ' 9H"[Z#$YMd /&* Y" $ 0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 ' 9H"[Z#


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    Abstract: No abstract text available
    Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H- Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &   I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#


    Original     		PDF IPB042N10N3 IPI045N10N3 IPP045N10N3

    4b 5c marking

    Abstract: PG-TO-263-7
    Text: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPB030N08N3 4b 5c marking PG-TO-263-7

    Untitled

    Abstract: No abstract text available
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    marking eb5

    Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R  , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC J +&.   Y" ,- I9 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPP139N08N3 IPI139N08N3 IPB136N08N3 65AE5 marking eb5 diode marking eb5 EB5 MARKING marking G9 i95B

    IPB065N15N3

    Abstract: 5F040 ED 05 Diode marking EB5
    Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


    Original     		PDF IPB065N15N3 7865AE5 5F040 ED 05 Diode marking EB5

    marking EB5

    Abstract: 5CC1
    Text: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9


    Original     		PDF BSC320N20NS3 7865AE5 marking EB5 5CC1

    marking EB5

    Abstract: diode marking eb5 marking G9
    Text: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H )*&* Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


    Original     		PDF IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9

    Q451

    Abstract: 95B9 C19B marking EB5 d91d package marking 5f
    Text: IPD180N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H-(    )0 Y" I ,+ 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


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    Abstract: No abstract text available
    Text: Ie\Q  $  $  A; "%&$!"#  " : A 0<% <,9=4=>: < " <: /?.>$ ?8 8 ,<C 6LHZ[XLY Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC , 9H .( J * 9H"[Z#$YMd ) Y" '9 *( 6 Q  H3 5<<5>D71D5 3 81B75 H* 9H"[Z# @B? 4E3 D ( & 


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    marking eb5

    Abstract: diode marking eb5 BSZ440N10NS3 i95B DS 654 5C
    Text: BSZ440N10NS3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H J Q . 5BI <? G 71D 5 3 81B 75 6? B8978 6B5AE5>3 I 1@@<931D9 ? >C R 9H"[Z#$YMd , Y" Q ( @D9=9J54 6? B43 43 3 ? >F5BC9? > I9 )0 6 Q ' 3 81>>5< >? B=1<<5F5< E=%IH9HDC%0 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


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    Text: Ie\Q #   !  !   $ '#$% !&#"  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q ( @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC * 9H .( J ( 9H"[Z#$YMd *- Y" %9 *0 6 Q  H3 5<<5>D71D5 3 81B75 H( 9H"[Z# @B? 4E3 D ( & 


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    Abstract: No abstract text available
    Text: #    !  !   "%&$!"# !B<"  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC 9H 0( J ' 9H"[Z#$YMd +&/ Y" $9 /- 6 Q  H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D ( & 


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    Text: #    !  !   Ie\Q "%&$!"# !B<"  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC 9H .( J ' 9H"[Z#$YMd 0&0 Y" $9 -( 6 Q  H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D ( & 


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    Text: #  !  !   "%&$!"# !B<"  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC 9H 0( J ' 9H"[Z#$YMd )( Y" $9 ,( 6 Q  H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D ( & 


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    Diode 9H

    Abstract: d5cd IPB031NE7N3 G
    Text: IPB031NE7N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q @D9=9J54 D53 8>? <? 7I 6? BCI>3 8B? >? EC B53 D9 6931D9 ?> Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4     3 ? >F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y" I9 )( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


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    Text:  %  ! ! %  "%&$!"#D # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 H' 9H"[Z# @B? 4E3 D &  9H )( J ' 9H"[Z#$YMd )1&. Y" $9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 ' 9H"[Z# E=%I9HDC%0 Q  T ? @5B1D9>7 D5=@5B1D


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    Q451

    Abstract: B175D e-b35f
    Text: # #  ! !   #   ! !   #   ! !   B< "%&$!"#  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 H* 9H"[Z# @B? 4E3 D &  , 9H ( J *  , ? >=1H-(    )*&+ Y" ' -0 6


    Original     		PDF 726-IPB123N10N3G IPB123N10N3 Q451 B175D e-b35f

    D1D5B

    Abstract: B175D DIODE ED 99
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 0( J .&/ Y" 0( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


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    H945

    Abstract: No abstract text available
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