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    Infineon Technologies AG IPI139N08N3GHKSA1

    MOSFET N-CH 80V 45A TO262-3
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    IPI139N08N3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IPI139N08N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 80.0 V; RDS (on) (max) (@10V): 13.9 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 45.0 A; Original PDF
    IPI139N08N3GHKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 45A TO262-3 Original PDF

    IPI139N08N3 Datasheets Context Search

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    Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R  , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC J +&.   Y" ,- I9 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF IPP139N08N3 IPI139N08N3 IPB136N08N3 65AE5 marking eb5 diode marking eb5 EB5 MARKING marking G9 i95B

    139n08n

    Abstract: D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO IPP139N08N3 JESD22 PG-TO-220-3
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching 80 R DS(on),max (SMD) • Optimized technology for DC/DC converters V 13.6 ID mΩ 45 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP139N08N3 IPI139N08N3 IPB136N08N3 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139N08N 139n08n D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO JESD22 PG-TO-220-3

    Untitled

    Abstract: No abstract text available
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G  3 Power-Transistor Product Summary Features V 9H Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀ 0 R ,?>=1H฀,& Q฀(@D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC J +&. I9 Y ,- 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&


    Original     		PDF IPP139N08N3 IPI139N08N3 IPB136N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9?

    139n08n

    Abstract: D225 SMD 136N08N IEC61249-2-21 IPP139N08N3 PG-TO-220-3 SMD F45 IPP139N08N3 G D225 Diode D45 1730
    Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS 3 Power-Transistor Product Summary Features 80 V DS • Ideal for high frequency switching 13.6 R DS on ,max (SMD) • Optimized technology for DC/DC converters V mΩ 45 ID A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP139N08N3 IPI139N08N3 IPB136N08N3 IEC61249-2-21 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139n08n D225 SMD 136N08N IEC61249-2-21 PG-TO-220-3 SMD F45 IPP139N08N3 G D225 Diode D45 1730

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J