3QN0402
Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04
Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary V DS 40 V R DS on 1.6 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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PDF
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IPB180N04S3-02
PG-TO263-7-3
3QN0402
14300pF
3900pF
710pF
245nC
210nC
3QN0402
PG-TO263-7-3
IPB180N04S3-02
ipb180n04
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3QN0402
Abstract: IPB180N04S3-02 ANPS071E ipb180n04
Text: IPB180N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on 1.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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Original
|
PDF
|
IPB180N04S3-02
PG-TO263-7-3
3QN0402
3QN0402
IPB180N04S3-02
ANPS071E
ipb180n04
|
3QN0402
Abstract: DD32
Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on 1.6 mΩ ID 180 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPB180N04S3-02
PG-TO263-7-3
3QN0402
14300pF
3900pF
710pF
245nC
3QN0402
DD32
|