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    IDQ FREQ PRODUCTS Search Results

    IDQ FREQ PRODUCTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    IDQ FREQ PRODUCTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm


    Original     		PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		PDF MGF0915A MGF0915A 23dBm 50pcs)

    60Ghz

    Abstract: MGF0952P 211G idq042a
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm


    Original     		PDF MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA 60Ghz 211G idq042a

    0951P

    Abstract: MGF0951P 60Ghz mitsubishi mgf
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm


    Original     		PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 0951P 60Ghz mitsubishi mgf

    4 pin 9v

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm


    Original     		PDF MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA 4 pin 9v

    60Ghz

    Abstract: MGF0915A a4013
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		PDF MGF0915A MGF0915A 23dBm 50pcs) 60Ghz a4013

    VD F1 SMD

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) VD F1 SMD

    MGF0919A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


    Original     		PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 50pcs)

    Untitled

    Abstract: No abstract text available
    Text: TGA2237-SM 0.03 – 2.5GHz 10W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare QFN 5x5 mm 32L Product Features            Functional Block Diagram Frequency Range: 0.03 – 2.5GHz


    Original     		PDF TGA2237-SM 40dBm 27dBm 33dBm 360mA,

    Untitled

    Abstract: No abstract text available
    Text: TGA2585 2.7 – 3.7GHz 18W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram        Frequency Range: 2.7 – 3.7GHz PSAT: 42.8dBm at 28V PAE: 52% Small Signal Gain: 33dB Input Return Loss: >15dB


    Original     		PDF TGA2585 5-32V 225mA, TGA2585 TQGaN25)

    Untitled

    Abstract: No abstract text available
    Text: TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram        Frequency Range: 2.7 – 3.7GHz PSAT: 40.5dBm at 25V PAE: 54% Small Signal Gain: 33dB Input Return Loss: >18dB


    Original     		PDF TGA2583 5-32V 175mA, TGA2583 TQGaN25)

    Untitled

    Abstract: No abstract text available
    Text: TGA2585 2.7 – 3.7GHz 18W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram      Frequency Range: 2.7 – 3.7GHz PSAT: 42.8dBm at 28V PAE: 54% Small Signal Gain: 33dB Bias: VD = 25-32V CW or Pulsed , IDQ = 225mA, VG


    Original     		PDF TGA2585 5-32V 225mA, TGA2585 TQGaN25)

    MVB3030X103M2

    Abstract: No abstract text available
    Text: TGA2595 27.5 to 31GHz, 9W Power Amplifier Applications • Satellite Communications Product Features Functional Block Diagram • Frequency Range: 27.5 to 31 GHz • Pout @ Pin = 22 dBm: 39.5 dBm CW • PAE @ Pin = 22dBm: 24% CW • • • • • • 2 3 4


    Original     		PDF TGA2595 31GHz, 22dBm: TGA2595 MVB3030X103M2

    Untitled

    Abstract: No abstract text available
    Text: TGA2597-SM 2 - 6 GHz GaN Driver Amplifier Applications • Commercial and Military Radar • Communications • Electronic Warfare EW Product Features • • • • • • • Functional Block Diagram Frequency Range: 2 - 6 GHz Small Signal Gain: > 24 dB


    Original     		PDF TGA2597-SM TGA2597-SM TQGaN25 with14

    UGF09060F

    Abstract: MRF9060 UGF09060 UGF09060P
    Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09060 869-894MHz, 869-894MHz. MRF9060. 27VDC, 869MHz, 400kHz) 600kHz) UGF09060F MRF9060 UGF09060 UGF09060P

    Untitled

    Abstract: No abstract text available
    Text: TGA2627-SM 6 - 12 GHz GaN Driver Amplifier Applications • • • Commercial and Military Radar Communications Electronic Warfare EW Product Features • • • • • • • • • • • Functional Block Diagram Frequency Range: 6 - 12 GHz Push-Pull Configuration


    Original     		PDF TGA2627-SM TGA2627-SM TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: TGA2598 6 – 12GHz 2W GaN Driver Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare EW Product Features         Functional Block Diagram Frequency Range: 6 – 12GHz PSAT: >33dBm PAE: >31%


    Original     		PDF TGA2598 12GHz 12GHz 33dBm 100mA, TGA2598 TQGaN25) 6-12GHz, 33dBm

    Untitled

    Abstract: No abstract text available
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband ampliiers Product Features


    Original     		PDF T1G4005528-FS T1G4005528-FS

    UGF09060F

    Abstract: Cree Microwave MRF9060 UGF09060 UGF09060P
    Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09060 869-894MHz, 869-894MHz. MRF9060. 27VDC, 869MHz, UGF09060 UGF09060F Cree Microwave MRF9060 UGF09060P

    Untitled

    Abstract: No abstract text available
    Text: TGA2237 0.03 – 2.5GHz 10W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare Product Features            Functional Block Diagram Frequency Range: 0.03 – 2.5GHz


    Original     		PDF TGA2237 40dBm 27dBm 32dBm 120mA 30dBm/tone: -30dBc

    200w transistor amplifier circuit

    Abstract: Cree Microwave UGF09200 UGF09200F IDQ Freq Products
    Text: UGF09200 200W, 869-894MHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large-signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 200W, it is ideal for CDMA / CDMA2000,


    Original     		PDF UGF09200 869-894MHz, 869-894MHz. CDMA2000, 28VDC@ 869MHz, UGF09200 200w transistor amplifier circuit Cree Microwave UGF09200F IDQ Freq Products

    T1G4005528-FS

    Abstract: C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features


    Original     		PDF T1G4005528-FS T1G4005528-FS C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094

    T1G4005528-FS

    Abstract: EAR99 RO3210
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features


    Original     		PDF T1G4005528-FS T1G4005528-FS EAR99 RO3210

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 50.5 dBm Nominal PSAT at 3 GHz 70.5% Maximum PAE


    Original     		PDF TGF2023-2-20 TQGaN25 TGF2023-2-20 DC-18