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    UGF09060F Search Results

    UGF09060F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UGF09060F Cree FET Transistor, 60W, 869-894GHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

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    Abstract: No abstract text available
    Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09060 869-894MHz, 869-894MHz. MRF9060. 27VDC, 869MHz, UGF09060

    UGF09060F

    Abstract: Cree Microwave MRF9060 UGF09060 UGF09060P
    Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09060 869-894MHz, 869-894MHz. MRF9060. 27VDC, 869MHz, UGF09060 UGF09060F Cree Microwave MRF9060 UGF09060P

    UGF09060F

    Abstract: MRF9060 UGF09060 UGF09060P
    Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09060 869-894MHz, 869-894MHz. MRF9060. 27VDC, 869MHz, 400kHz) 600kHz) UGF09060F MRF9060 UGF09060 UGF09060P