42AA
Abstract: MGF0952P mgf09
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:
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MGF0952P
MGF0952P
25deg
1000pF
330uF
42AA
mgf09
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c id
Abstract: 42AA MGF0952P
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:
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MGF0952P
MGF0952P
35GHz
25deg
c id
42AA
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4 pin 9v
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm
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MGF0952P
MGF0952P
15GHz
15GHz
25dBm
700mA
4 pin 9v
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MGF0952P
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:
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MGF0952P
MGF0952P
35GHz
25deg
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PDF
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm
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MGF0952P
MGF0952P
15GHz
25dBm
15GHz
700mA
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm
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MGF0952P
MGF0952P
15GHz
15GHz
25dBm
700mA
June/2004
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PDF
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60Ghz
Abstract: MGF0952P 211G idq042a
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm
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MGF0952P
MGF0952P
15GHz
15GHz
25dBm
700mA
60Ghz
211G
idq042a
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PDF
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MGF0952P
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm
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Original
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MGF0952P
MGF0952P
15GHz
15GHz
25dBm
700mA
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PDF
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42AA
Abstract: MGF0952P
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:
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MGF0952P
95GHz
MGF0952P
25deg
-900KHz)
900KHz)
-600KHz)
42AA
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PDF
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42AA
Abstract: MGF0952P
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:
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MGF0952P
95GHz
MGF0952P
25deg
-900KHz)
900KHz)
-600KHz)
42AA
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PDF
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s band
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm
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Original
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MGF0952P
MGF0952P
15GHz
25dBm
15GHz
700mA
s band
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PDF
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42AA
Abstract: MGF0952P
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:
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MGF0952P
17GHz
MGF0952P
14GHz
25deg
42AA
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MGF0952P
Abstract: 42AA
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:
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MGF0952P
MGF0952P
25deg
61GHz
-10MHz)
10MHz)
42AA
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PDF
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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812 946
Abstract: 0946 L 0946 MGF0952P 952P
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> PRELIMINARY MGF0952P L & S BAND G a As F E T [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm
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OCR Scan
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MGF0952P
MGF0952P
15GHz
15GHz
25dBm
800mA
812 946
0946
L 0946
952P
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