Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IC TSOP28 Search Results

    IC TSOP28 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    IC TSOP28 Price and Stock

    Silicon Laboratories Inc EFM8BB52F16I-C-TSSOP28

    8-bit Microcontrollers - MCU 5 Volt 8051 50 Mhz 16 kB flash 1.28 kB RAM 25 GPIO BB5 8-bit MCU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EFM8BB52F16I-C-TSSOP28
    • 1 $1.33
    • 10 $1.2
    • 100 $0.93
    • 1000 $0.749
    • 10000 $0.7
    		Get Quote

    IC TSOP28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RILP0108ESP-xSR

    Abstract: RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D
    Text: Renesas Memories General Presentation October 2010 Renesas Low Power SRAM Renesas Electronics Corporation Mixed Signal IC Business Div. Analog & Power Devices Business Unit 10/01/2010 1-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.


    Original     		PDF R1WV6416R RILP0108ESP-xSR RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6304 CMOS IC LC35W256EM, ET-10W 256K 32K words x 8 bits SRAM Control pins: OE and CE Overview Package Dimensions The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices


    Original     		PDF ENN6304 LC35W256EM, ET-10W LC35W256EM-10W LC35W256ET-10W 32768word

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K 32K words x 8 bits SRAM Control pins: OE and CE Overview Package Dimensions The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices


    Original     		PDF ENN6303 LC35V256EM, ET-70W LC35V256EM-70W LC35V256ET-70W 32768word

    70513

    Abstract: No abstract text available
    Text: Ordering number : ENN*7051 CMOS IC LC35W256GM, GT-70U 256K 32768-words x 8-bit SRAM with OE and CE control pins Preliminary Overview Package Dimensions The LC35W256GM-70U and LC35W256GT-70U are 32768-words by 8-bit asynchronous silicon gate low supply voltage CMOS SRAMs. These devices adopt a


    Original     		PDF LC35W256GM, GT-70U 32768-words LC35W256GM-70U LC35W256GT-70U 32768-words 70513

    dip28-300

    Abstract: bt 450 DIP28- 600
    Text: Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K 8192-word x 8-bit SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a


    Original     		PDF EN5804A LC3564B, BT-70/10 8192-word LC3564BS, LC3564BM, LC3564BT dip28-300 bt 450 DIP28- 600

    DIP28

    Abstract: LC35256D-10 LC35256DM LC35256DT dt70 Dt10 3221-TSOP28
    Text: Ordering number : EN5823 CMOS IC LC35256D-10, LC35256DM, DT-70/10 Dual Control Pins: OE and CE 256K 32768-word x 8-bit SRAM Overview Package Dimensions The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS


    Original     		PDF EN5823 LC35256D-10, LC35256DM, DT-70/10 32768-word LC35256D, LC35256DT DIP28 LC35256D-10 LC35256DM dt70 Dt10 3221-TSOP28

    LC35256

    Abstract: 3221-TSOP28
    Text: Ordering number : ENN*6302 CMOS IC LC35256FM, FT-55U/70U 256K 32768 words x 8 bits SRAM Control Pins: OE and CE Preliminary Overview Package Dimensions The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors


    Original     		PDF LC35256FM, FT-55U/70U LC35256FM LC35256FT 32K-word LC35256 3221-TSOP28

    A13514

    Abstract: 70U30
    Text: Ordering number : ENN6635A CMOS IC LC3564CM, 3564CT-55U/70U 64K 8192-word x 8-bit SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor


    Original     		PDF ENN6635A LC3564CM, 3564CT-55U/70U 8192-word LC3564CM LC3564CT-55U/70U A13514 70U30

    MSM51V16400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16400 4,194,304-W ord x 4-B it DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynam ic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51VI6400 304-Word MSM51V16400 cycles/64ms MSM51V16400 72424D

    5116100

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit D YN AM IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116100 is a new generation dynam ic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116100 216-Word MSM5116100 cycles/64ms CA100 2H240 b724240 5116100

    Untitled

    Abstract: No abstract text available
    Text: TEm ic TSOP28 S e m i c o n d u c t o r s Photo Modules for PCM R em ote Control Systems Available types for different carrier frequencies . Type . . fo. TSOP2830 30 kHz TSOP2833 . fo. 33 kHz TSOP2836 36 kHz TSOP2837


    OCR Scan     		PDF TSOP28 TSOP2830 TSOP2836 TSOP2838 TSOP2856 TSOP2833 TSOP2837 TSOP2840 TSOP28. D-74025

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V171CX is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17100_ 216-Word MSM51V17100 216-word MSM51V171CX) 216-w cycles/32m MSM51V17100 2424G

    A11E

    Abstract: A1E transistor
    Text: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100 is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116100_ 216-Word MSM5116100 cycles/64ms A0-A11 MSM5116100 A11E A1E transistor

    5117805

    Abstract: No abstract text available
    Text: O K I Semiconductor_ MSM5117805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117805A achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM5117805A_ 152-Word MSM5117805A 28-pin cycles/32 5117805

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17100 216-Word 51V17100 216-w S4H40 2424D

    7B424

    Abstract: MSM5117100
    Text: O K I Sem iconductor M SM5117100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCR IPTIO N The MSM5117100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117100_ 216-Word MSM5117100 cycles/32ms MSM5117100 A0-A11 EM240 7B424

    MSM51V16100

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 V16100 _ 16,777,216-W ord x 1 -B it DYN AM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V16100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16100_ 216-Word MSM51V16100 cycles/64ms MSM51V16100 b724240 001fl35b

    oki 117400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 117400 _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The M SM 5117400 is a n ew generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF 304-Word 304-w MSM5117400 b7E424D MSM5117400 00173bt. oki 117400

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit


    OCR Scan     		PDF TC514800AJ/AZ/AFT-70/80 TC514800AJ/AZ/AFT TC514800A

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The MSM51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology.


    OCR Scan     		PDF MSM51V16100_ 216-Word MSM51V16100 216-w V16100 cycles/64m 7242MQ GD173Ã MSM51V16100

    MSM51V16400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a n e w generation dynam ic organized as 4,194,304-w o rd x 4-bit. The technology used to fabricate the MSM51V16400 is O K I's C M O S silicon gate process technology.


    OCR Scan     		PDF MSM51V16400 304-Word MSM51V16400 cycles/64ms 2424D b724240

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17400 4,194,304-Word x 4-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17400 304-Word MSM51V17400 cycles/32ms b724240 G017425

    MSM5117800

    Abstract: TSOP28-P-400
    Text: O K I Semiconductor MSM5 1 17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117800 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117800 152-Word MSM5117800 cycles/32ms A0-A10 b724240 TSOP28-P-400

    tsop 338 IR

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17800 is a 2,097,152-w ord x 8-bit dynam ic RA M fabricated in OKI's CM O S silicon gate technology. The M SM 51V17800 achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM51 V17800 152-Word 51V17800 152-w 28-pin tsop 338 IR