HA11A
Abstract: No abstract text available
Text: PRELIMINARY - - FUJITSU May 1995 Edition 1.0 PRODUCT PROFILE SHEET MB 81 V16400A - 50 / - 60/-70 CMOS 4M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM T h e F ujitsu M B 8 1 V 1 6 4 0 0 A is a fu lly d e c o d e d C M O S D yn a m ic RAM D R A M th a t co n ta in s
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V16400A
HA11A
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MSM51V16400A
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16400 A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V16400A is
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MSM51V16400A
304-Word
MSM51V16400A
26/24-pin
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Untitled
Abstract: No abstract text available
Text: E2G0122-17-61 O K I Semiconductor Thisversion:^ 1998 V16400D/DSL_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The V16400D/DSL achieves high integration, high-speed operation,
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E2G0122-17-61
MSM51V16400D/DSL_
304-Word
TheMSM51
V16400D/DSL
MSM51V16400D/DSL
MSM51V16400D
a26/24-pin
26/24-pin
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Untitled
Abstract: No abstract text available
Text: • « Y U N O Ä T • HY51V17400B,HY51 V16400B 4Ux4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17400B
V16400B
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51 V17400B.HY51 V16400B 4M x4, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
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HY51V17400B
V16400B
A0-A11)
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V17400B,HY51 V16400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17400B
V16400B
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Untitled
Abstract: No abstract text available
Text: IIP ^ Y ^ ^QT72 4 f l 0 0 2 ñ 2 cí i:í ñ 01 V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description V16400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC51 V16400BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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TC51V16400BST-60/70
TheTC51V16400BST
TheTC51
V16400BST
TC51V16400BST
300mil)
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A312H
Abstract: A9R-A11R MSM51V16400D MSM51V16400DSL 010L
Text: E2G0122-17-61 O K I Semiconductor This version: Mar. 1998 M SM 51 VI 6400D /D SL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM V16400D/DSL achieves high integration, high-speed operation,
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E2G0122-17-61
MSM51V16400D/DSL
304-Word
TheMSM51
V16400D/DSL
MSM51V16400D/DSL
MSM51V16400D
a26/24-pin
26/24-pin
A312H
A9R-A11R
MSM51V16400DSL
010L
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MSM51V16400A
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16400 A_ 4,194,304-Word x 4-Bit DYNAMIC R AM : FA ST P A G E M O D E T Y P E DESCRIPTION The V16400A is a 4494,304-w ord x 4-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The V16400A achieves high integration, high-speed operation, a n d lowpo w er consum ption d u e to q u ad ru p le polysilicon double m etal CMOS. The V16400A is
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MSM51V16400A_
304-Word
MSM51V16400A
26/24-pin
4096cycles/64ms
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MSM51V16400
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16400 4,194,304-W ord x 4-B it DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16400 is a new generation dynam ic organized as 4,194,304-word x 4-bit. The technology used to fabricate the V16400 is OKI's CMOS silicon gate process technology.
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MSM51VI6400
304-Word
MSM51V16400
cycles/64ms
MSM51V16400
72424D
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Untitled
Abstract: No abstract text available
Text: MEMORY jgggHÊÈIÊHÈlHÊÈÊHIÊÈÈËIMH V16400A-50/-60/-70 CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic DAM • DESCRIPTION The Fujitsu V16400A is a fully decoded CMOS Dynamic RAM; DR AM :Ifriat contains 16,777,216 memory cells accessible in 4-bit increments. The V16400A features,a “l i s t page” mode of operation whereby high
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MB81V16400A-50/-60/-70
MB81V16400A
F9704
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Untitled
Abstract: No abstract text available
Text: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P
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B81V16400A-60
B81V16400A-70
6400A-60L
1V16400A-70L
B81V17400A-60
B81V17400A-70
7400A-60L
B81V17400A-70L
16400B-50
MB81V1640QB-60
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HY51V17400A, V16400A 4M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dyn a m ic RAM organized 4,194,304 x 4 -b it configuration w ith Fast Page m ode C M O S DRAM s. Fast Page m ode offers high speed random access o f m em ory cells within the sam e row.
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HY51V17400A,
HY51V16400A
HY51V17400AJ
HY51V17400ASLJ
HY51V17400AT
HY51V17400ASLT
HY51V16400AJ
HY51V16400ASLJ
HY51V16400AT
HY51V16400ASLT
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs V16400CJ,TP-5,-6,-7,-5S,-6S,-7S _FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a fam ily of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal
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M5M4V16400CJ
16777216-BIT
4194304-WQRD
4194304-word
4V1640QCJ
M5M4V16400CJJP-5
M5M4V164Q0CJ
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT. E A S ll^ V16400B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The V16400B features a “fast page” mode of operation whereby high
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MB81V16400B-50/-60/-50L/-60L
MB81V16400B
F9712
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIS V16400CJ,TP-5,-6,-7, -5S,-6S,-7S FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal
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M5M4V16400CJ
16777216-BIT
4194304-WQRD
4194304-word
16400CXX-5
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Untitled
Abstract: No abstract text available
Text: •«HYUNDAI HY51V17400B, V16400B 4M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F a s t P a g e m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs h ig h s p e e d
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HY51V17400B,
HY51V16400B
17400B
HY51V17400BSLJ
Y51V17400BT
16400B
Y51V16400BSLJ
Y51V16400BT
Y51V16400BSLT
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PDF
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M5M4V16
Abstract: No abstract text available
Text: MITSUBISHI LSIs , - ^ h ix ^ M 5 M 4V 16400C J ,T P -5 ,-6 ,-7 , -5S ,-6S ,-7S FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal
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16400C
16777216-BIT
4194304-WQRD
4194304-word
M5M4V16400CJ
M5M4V16
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Untitled
Abstract: No abstract text available
Text: -PR ELIM IN A R YM ay 1995 Edition 1.0 . P R O D U C T P R O F IL E S H E E T — - FUJITSU V16400A-50/-60/-70 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM
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MB81V16400A-50/-60/-70
B81V16400A
MB81V16400A
024-bits
1V16400A
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