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    MSM5116100 Price and Stock

    OK International MSM5116100A-70SJ

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    Bristol Electronics MSM5116100A-70SJ 81
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    OK International MSM5116100C-60SJ

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    Bristol Electronics MSM5116100C-60SJ 10
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    OKI Semiconductor MSM5116100A-60JS

    16M X 1 FAST PAGE DRAM, 60 ns, PDSO24
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    Quest Components MSM5116100A-60JS 186
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    MSM5116100 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MSM5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MSM5116100-60JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-60JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-60TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-60TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-60TL OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-60TL OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-70JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-70JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-70TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-70TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-70TL OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-70TL OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-80JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-80JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-80TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-80TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-80TL OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100-80TL OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5116100A OKI Electronic Components 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF

    MSM5116100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRAMs

    Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
    Text: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP


    Original     		PDF MSM511664B-xx MSM514256C-xx MSM514256CL-xx MSM511000C-xx MSM51100CL-xx MSM54V32126 MSM5432126 16-Meg MSM5116160A-xx MSM5116165A-xx DRAMs MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c

    24 pin 16mbit DRAM

    Abstract: MSM5116100A MSM6688 MSM6788 MSM6791 sad a4 a5 gnd 05 we331
    Text: ¡ Semiconductor MSM6791 MSM6791 ¡ Semiconductor DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs MSM6688 and MSM6788 . FEATURES • DRAM (¥ 1-bit configuration)


    Original     		PDF MSM6791 MSM6791 MSM6688 MSM6788) MSM511000A, MSM511001A) MSM514100A, MSM514101A) 16M-bit 24 pin 16mbit DRAM MSM5116100A MSM6788 sad a4 a5 gnd 05 we331

    26-PIN

    Abstract: MSM5116100A
    Text: O K I Semiconductor MSM5116100A_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100A is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100A is OKI’s CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116100 216-Word MSM5116100A cycles/64ms MSM5116100A A0-A11 A0-A11 AO-A11, 26-PIN

    5116100

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit D YN AM IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116100 is a new generation dynam ic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116100 216-Word MSM5116100 cycles/64ms CA100 2H240 b724240 5116100

    Untitled

    Abstract: No abstract text available
    Text: O K I S em ico n d u cto r M SM 511 6 1 0 0 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100 is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF 216-Word MSM5116100 cycles/64ms A0-A11 GD1731Ã MSM5116100

    transistor 1BT 86

    Abstract: 26-PIN MSM5116100A
    Text: O K I Semiconductor MSM5 1 16100 A_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100A is a new generation dynam ic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100A is O K I’s C M O S silicon gate process technology.


    OCR Scan     		PDF MSM5116100A_ 216-Word MSM5116100A cycles/64ms SOJ26/24-P-3QO-1 S0J26/24-P-300-1 b72M240 QQ24b37 transistor 1BT 86 26-PIN

    A11E

    Abstract: A1E transistor
    Text: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100 is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116100_ 216-Word MSM5116100 cycles/64ms A0-A11 MSM5116100 A11E A1E transistor

    Untitled

    Abstract: No abstract text available
    Text: O K I Sem iconductor MSM5116100 A_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100A is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100A is OKI’s CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116100 216-Word MSM5116100A cydes/64m 2424D SQJ26/24-P-300-1 S0J26/24-P-300-1 0024b37

    m51171

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.


    OCR Scan     		PDF MSM51V17180 576-Word 18-Bit MSM51V17180 cycles/32ms m51171

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116190 576-Word 18-Bit MSM5116190 cycles/64ms

    MSM5116180-70

    Abstract: MSM5116180-80
    Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116180_ 576-Word 18-Bit MSM5116180 cycles/64ms MSM5116180-70 MSM5116180-80

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K

    32-PIN

    Abstract: A10E MSM51V16900-70 MSM51V16900-80
    Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16900_ 152-Word MSM51V16900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN 32-PIN A10E MSM51V16900-70 MSM51V16900-80

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
    Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116190 576-Word 18-Bit MSM5116190 cycles/64ms Bv 42 transistor tsop50 42-PIN MSM5116190-70 MSM5116190-80

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface


    OCR Scan     		PDF MSM6789A/6789L /6789L, MSM6788, 789A/6789L MSM6789A /6789L MSM6789L

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM6791 DRAM INTERFACE LSI G E N E R A L D E S C R IP T IO N MSM6791 can be used as a memory for which DRAM stores a voice data by connecting OKI solidstate recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)


    OCR Scan     		PDF MSM6791 MSM6791 MSM6788 MSM6688) MSM511000A, 11001A) MSM514100A, 14101A) 16M-bit MSM5116100)

    081m

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17900_ 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17900 152-Word MSM51V17900 MSM51VI7900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN 081m

    2454D

    Abstract: 2DQ11 2M54G
    Text: O K I Semiconductor MSM5117180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117180 576-Word 18-Bit MSM5117180 cycles/32ms 2454D 2DQ11 2M54G

    20 TI 54240

    Abstract: MSM51VI6180
    Text: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16180 576-Word 18-Bit MSM51V16180 MSM51VI6180 cycles/64ms 20 TI 54240

    darm

    Abstract: LM 327 CN MSM6688 MSM6788 MSM6791 0017H1S
    Text: O K I Semiconductor MSM6791 DRAM INTERFACE LSI GENERAL DESCRIPTION MSM6791 can be u sed as a m em ory for w hich DRAM stores a voice data b y connecting OKI solid state recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)


    OCR Scan     		PDF MSM6791 MSM6791 MSM6788 MSM6688) MSM511000A, MSM511001A) MSM514100A, MSM514101A) 16M-bit MSM5116100) darm LM 327 CN MSM6688 0017H1S

    MSM51V17180-70

    Abstract: MSM51V17180-80
    Text: O K I Semiconductor MSM51V17180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17180 576-Word 18-Bit MSM51V17180 MSM51VI7180 2048cycles/32ms MSM51V17180-70 MSM51V17180-80

    32-PIN

    Abstract: MSM5116900-70 MSM5116900-80 B724e
    Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116900 152-Word MSM5116900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN 32-PIN MSM5116900-70 MSM5116900-80 B724e

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116900 152-Word MSM5116900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN