Q67100-Q1104
Abstract: SOJ-28
Text: 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance: -50
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Original
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5117805/BSJ-50/-60
3117805/BSJ-50/-60
SPT03042
117805/BSJ-50/-60
GPJ05699
P-SOJ-28-3
400mil)
Q67100-Q1104
SOJ-28
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PDF
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MSM5117805
Abstract: MSM5117805D 5117805D
Text: 作成 ：1999 年 1 月 電子デバイス M SM 5117805D 2,097,152-Word x 8-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117805D はCMOS プロセス技術を用いた 2,097,152 ワードx8 ビット構成のダイナミックラ
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Original
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5117805D
152-Word
MSM5117805D
SOJ28
400mil
SOJ28-P-400-1
MSM5117805D-xxJS)
TSOPII28-P-400-1
MSM5117805D-xxTS-K)
MSM5117805
MSM5117805D
5117805D
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PDF
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Q67100-Q1104
Abstract: Q67100-Q1105 Q67100-Q1106
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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Original
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HYB5117805BSJ
HYB5117805BSJ-50/-60/-70
P-SOJ-28-3
400mil)
81max
GPJ05699
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
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PDF
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Sj70
Abstract: No abstract text available
Text: SIEMENS HYB 5117805BSJ -50/-60/-70 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n • 2 0 9 7 152 w o rd s b y 8-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re
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OCR Scan
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5117805BSJ-50/-60/-70
Sj70
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: HB56U232BA/SBA Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-721B Z Rev. 2.0 May. 26, 1997 Description The HB56U232BA/SBA is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (H M 5117805) sealed in SOJ package. The HB56U232BA/SBA offers Extended Data Out (EDO) Page
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OCR Scan
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HB56U232BA/SBA
152-word
32-bit
ADE-203-721B
16-Mbit
72-pin
Nippon capacitors
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PDF
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SMD MARKING CODE 2M
Abstract: No abstract text available
Text: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC
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OCR Scan
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5117805BSJ
5117805BSJ-5Q/-60/-70
5117805BSJ-50/-60/-70
86maxl
-251Al
SMD MARKING CODE 2M
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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OCR Scan
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5117805/BSJ-50/-60
3117805/BSJ-50/-60
117805/BSJ-50/-60
P-SOJ-28-3
400mil)
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PDF
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D071521
Abstract: d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106
Text: SIEM EN S 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 5117805BSJ -50/-60/-70 Prelim inary Information • • • 2 097 152 words by 8 -bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)
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OCR Scan
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5117805BSJ
A235bOS
5117805BSJ-50/-60/-70
I/01-I/08
fiE35bDS
0G71532
D071521
d0715
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 5117805BSJ -50/-60/-70 Prelim inary Inform ation • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)
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OCR Scan
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5117805BSJ
5117805BSJ-50/-60/-70
23SbDS
DG71532
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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OCR Scan
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5117805/BSJ-50/-60
3117805/BSJ-50/-60
117805/BSJ-50/-60
SPT03042
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PDF
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B77S
Abstract: No abstract text available
Text: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: ^RAC ^CAC RAS access time -50 -60 -70 50 60 70
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OCR Scan
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5117805BSJ
23SbD5
5117805BSJ-50/-60/-70
00flb7flfi
5117805BSJ-5Q/-60/-70
P-SOJ-28-3
6235bG5
B77S
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PDF
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Untitled
Abstract: No abstract text available
Text: 5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM 5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM 5117805 offers Extended
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OCR Scan
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HM5117805
152-word
ADE-203-630B
28-pin
ns/60
ns/70
mW/550
mW/495
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PDF
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Untitled
Abstract: No abstract text available
Text: 5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi 5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bits. It uses the most advanced CMOS technology for high performance and low power. The 5117805 offers extended data
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OCR Scan
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HM5117805
152-word
ADE-203-630B
28-pin
ns/60
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PDF
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Untitled
Abstract: No abstract text available
Text: 5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630 C Z Rev. 3.0 Feb. 25,1997 Description The Hitachi 5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 5117805 offers Extended
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OCR Scan
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HM5117805
152-word
ADE-203-630
28-pin
ns/60
ns/70
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70
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OCR Scan
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P-SOJ-26/20-5
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PDF
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thv8
Abstract: HYB39S16800T 16m x 4 hyb
Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15
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OCR Scan
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L-SIM-72-12
324020S/GS
324025S/GS
L-SIM-72-15
328020S/GS
328025S/GS
364020S/GS
L-SIM-72-13
364035S/GS
thv8
HYB39S16800T
16m x 4 hyb
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17805B_ E2G 0047-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 5117805B achieves high integration, high-speed operation, and low-power
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OCR Scan
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17805B_
152-Word
MSM5117805B
28-pin
cycles/32
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor 5117805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 5117805A achieves high integration, high-speed operation, and low-power
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OCR Scan
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MSM5117805A_
152-Word
MSM5117805A
28-pin
cycles/32
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PDF
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ra435
Abstract: MSM5117805 MSM5117805C
Text: E2G0113-18-42 O K I Semiconductor MSM5 1 17805C This version: A pr. 1998 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117805C is a 2,097,152-w ord x 8-bit dynam ic RAM fabricated in Oki's silicon-gate CMOS technology. The 5117805C achieves high integration, high-speed operation, and low-power
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OCR Scan
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E2G0113-18-42
MSM5117805C
152-Word
MSM5117805C
28-pin
ra435
MSM5117805
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56U264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56U264EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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OCR Scan
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HB56U264EJ
152-word
64-bit
264EJ
HM5117805BJ)
16-bit
74ABT16244)
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PDF
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74ABT
Abstract: No abstract text available
Text: HB56U264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-714A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U264EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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OCR Scan
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HB56U264EJ
152-word
64-bit
ADE-203-714A
16-Mbit
HM5117805)
16-bit
74ABT16244)
74ABT
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PDF
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Untitled
Abstract: No abstract text available
Text: 5117805 Series 2,097,152-Word x 8-Bit Dynamic RAM HITACHI ADE-203-630 C Z Rev. 3.0 25 Feb 1997 Description The Hitachi 5117805 is a CMOS dynamic RAM organized as 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power consumption. The 5117805
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OCR Scan
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HM5117805
152-Word
ADE-203-630
HM5117805
28-pin
ns/60
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PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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OCR Scan
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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PDF
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5117400
Abstract: sem 2500 7212 tube
Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1
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OCR Scan
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P-SOJ-26/20-1
J-26/20-5?
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-26/24-1
1000BJ
514256BJ
514100BJ
514400BJ
5117400
sem 2500
7212 tube
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PDF
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