97C54
Abstract: siemens gms90c52
Text: HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90C3X GMS90C5X GMS97C5X User’s Manual Ver. 3.1a MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 3.1a Published by MCU Application Team 1999 HYUNDAI MicroElectronics All right reserved.
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GMS90C3X
GMS90C5X
GMS97C5X
44PLCC
GMS90
44MQFP
97C54
siemens gms90c52
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LG TCON
Abstract: 2a8h t-con lg
Text: 32K Flash Embedded 8-Bit MCU GMS99C58 DATA SHEET April. 2000 Ver 1.02 +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industries Co., Ltd. GMS99C58 HYUNDAI CONTENTS - 1.Overview . 1
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GMS99C58
40-PDIP
PLCC-44/Pin
PDIP-40/Pin
MQFP-44/Pin
LG TCON
2a8h
t-con lg
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Untitled
Abstract: No abstract text available
Text: HYUNDAI MICRO ELECTRONICS MULTI-FORMAT DIGIATL AUDIO DECODERS HMS30C1100/1200 DataSheet Ver. 1.0 +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Revision History Ver. 1.0 (this manual) Nov. 25, 2000 Version 1.0 Published by
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HMS30C1100/1200
64TQFP
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97C54
Abstract: 97C52 97c51 hyundai GMS97X56 gms90c52 interfacing 8051 with 32k byte eprom and 4k byte
Text: DEC. 1998 Ver. 3.1 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90 Series DATA SHEET +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 3.1 Published by MCU Application Team 1999 HYUNDAI MicroElectronics All right reserved.
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GMS90
97C54
97C52
97c51
hyundai
GMS97X56
gms90c52
interfacing 8051 with 32k byte eprom and 4k byte
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CMA31
Abstract: Linear Image sensor IC for CIS HV7131X Color CIS line sensor H1A424M167
Text: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.01 Author Doowon Choi IT Application Team System IC SBU Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date
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H1A424M167
HV7121X)
CMA31
Linear Image sensor IC for CIS
HV7131X
Color CIS line sensor
H1A424M167
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hyundai
Abstract: CMA31 hyundai 235 flicker automatic exposure gain multiple 176X144 320X240 640X480 H1A424M167 HV7131B high frequency linear cmos IMAGE SENSOR
Text: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.0 Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date Comments 0.45 April 28, 1999 Draft 0.9 June 15, 1999
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H1A424M167
HV7121X)
hyundai
CMA31
hyundai 235
flicker automatic exposure gain multiple
176X144
320X240
640X480
H1A424M167
HV7131B
high frequency linear cmos IMAGE SENSOR
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90C52
Abstract: hyundai 80c32 pl50 datasheet GMS90C320 80c32 24Mhz plcc44 200ua1
Text: OCT. 1999 Ver. 1.1 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90C320 User’s Manual +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.1 Published by MCU Application Team 1999 HYUNDAI Micro Electronics Co., Ltd. All right reserved.
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GMS90C320
P-DIP-40
40DIP
P-MQFP-44
90C52
hyundai 80c32
pl50 datasheet
GMS90C320
80c32 24Mhz plcc44
200ua1
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HY53C256
Abstract: HY53C256LS
Text: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C256
256Kx1-bit
300mil
16pin
330mil
18pin
standbY556)
HY53C256LS
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dn729
Abstract: P2254 P22154 P22264 P22328 P2252
Text: RELIABILITY MONITOR DS1210S JAN '98 MONITOR-HYUNDAI DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1210 C1 9750 DN738347AAA 16 PIN SOIC HYUNDAI-KOREA HEI PROCESS Single Poly, Single Metal 3.0 µm POCL3 reFlow (3um only); FLASH E2PROM (all other tech. numbers)
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DS1210S
DS1210
DN738347AAA
P21776
P22233
P22310
P22312
P22230
P22309
P22311
dn729
P2254
P22154
P22264
P22328
P2252
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Untitled
Abstract: No abstract text available
Text: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast
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HY51C1000
M131202B-APR91
HY51C1000
576X1
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Ck37
Abstract: CSFR 40
Text: • HYUNDAI HY51V4100B Series 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s C M OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V4100B
304x1-bit.
1AC10-10-MAY95
HY51V4100BJ
HY51V4100BLJ
HY51V41008SLJ
Ck37
CSFR 40
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256KX
Abstract: No abstract text available
Text: HY234100 Z l ” , Hyundai SEMICONDUCTOR 512k„r !* K! M621201A-MAY92 DESCRIPTION FEATURES The HY234100 is mask-programmable ROM organized as 524,288 words by 8 bits or 262,144 words by 16 bits. It is fabricated using HYUNDAI’S CMOS process technology. The
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HY234100
M621201A-MAY92
288x8/262
144x16
275mW
40-pin
HY234100
512kX8/256KX
256KX
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HY53C256LS
Abstract: HY53C256S-70 HY53C256 HY53C256LF HY53C256LS70
Text: HYUNDAI HY53C256 Series 256KX 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C256
300mil
16pin
330mil
18pin
300BSC
1AA01-20-MAY94
HY53C256LS
HY53C256S-70
HY53C256LF
HY53C256LS70
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MAY94
Abstract: vve.3 HY53C256 A08H
Text: HY53C256 Series HYUNDAI 256K x1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C256
300mtl
16pin
330mil
18pin
300BSC
1AA01-20-MAY84
MAY94
vve.3
A08H
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IC TX-2-c
Abstract: Y51480 5LCAC
Text: HY514800B Series HYUNDAI 512KX 8-blt CMOS DRAM PRELIMINARY DESCRIPTION The HY5148006 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY514800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514800B
512KX
HY5148006
1AC17-00-MAY94
HY514800BJC
HY514800BLJC
HY514800BSUC
IC TX-2-c
Y51480
5LCAC
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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HY53C464LS
Abstract: HY53C464
Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
4b750afl
1AA02-20-APR93
HY53C464S
HY53C464LS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY HY514400 HYUNDAI SEMICONDUCTOR 1 MX 4-Bit CMOS DRAM M1A1200A-MAY91 DESCRIPTION FEATURES The H Y 514400 is the new generation dyna mic RAM organized 1,048,576 words by 4 bits. The HY514400 utilizes HYUNDAI’S CMOS process technology as well as advanced circuit
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HY514400
M1A1200A-MAY91
HY514400
HY514400.
512KX8
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SERVICE MANUAL tv hyundai
Abstract: OSD 9616 1207H
Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team bjlim@hmec.co.kr conner@hmec.co.kr 2000 HYUNDAI Micro Electronics All right reserved.
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GMS87C4060
GMS81C4040
SERVICE MANUAL tv hyundai
OSD 9616
1207H
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SERVICE MANUAL tv hyundai
Abstract: television service manual hyundai data transistor horisontal tv YSS 928 icar capacitor OSD 9616 tv hyundai GMS81C4040 Hyundai HD 170 intel 27010 eprom
Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team bjlim@hmec.co.kr conner@hmec.co.kr 2000 HYUNDAI Micro Electronics All right reserved.
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GMS87C4060
GMS81C4040
SERVICE MANUAL tv hyundai
television service manual hyundai
data transistor horisontal tv
YSS 928
icar capacitor
OSD 9616
tv hyundai
GMS81C4040
Hyundai HD 170
intel 27010 eprom
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HY5116400
Abstract: I3101A Hyundai Semiconductor dram
Text: HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116400
Schottk160)
2-10-A
HY5116400JC
HY5116400LJC
HY5116400TC
I3101A
Hyundai Semiconductor dram
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PDF
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hy6264
Abstract: No abstract text available
Text: HY6264A-I Series •{HYUNDAI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY6264A-I
1DB02-11-MAY95
100IP9C)
OS3003
330mil
4b750flfl
hy6264
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
117400A
1AD27-10-MAY9S
HY5117400AJ
HY5117400AT
Y5117400ASLT
HY5117400AR
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PDF
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HY51C4256
Abstract: block diagram of vu meter HY51C4254-10
Text: M• ■ HY51C4256 R Hyundai SEMICONDUCTOR A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CM OS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page m ode for high data bandw idth, fast usable
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HY51C4256
256KX4-Bit
M151201Bâ
APR91
S1C4256
block diagram of vu meter
HY51C4254-10
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