Contextual Info: HY62C256 HYUNDAI S EM IC O N D U C TO R 32KX8-KC CMOS SRAM M 231202B-APR91 FEATURES DESCRIPTION • High speed— 85/100/120/150 ns m ax. The HY62C256 is a high speed low power, 32,768 words by 8-bit CM OS static RAM fabri­ cated using HYUNDAI’S high performance

Contextual Info: A J • ■ HY62256A H Y U N o n i m x M lt CMOS SRAM s e m ic o n d u c t o r M241201B-APR91 DESCRIPTION FEATURES The HY62256A is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabricated using HYUNDAI’S high perfor­ m ance twin tub CM OS process. This high

58256

Abstract: 58256a
Contextual Info: HYUNDAI V i SEMICONDUCTOR HYM58256A 256KX 8-Bit C M O S DRAM MODULE M461201A-APR91 DESCRIPTION FEATURES The HYM58256A is a 256K words by 8 bits dynamic RAM module and consists of Fast Page mode CMOS DRAMs of two HY534256J in 20/26 pin SOJ mounted on a 30 pin glassepoxy printed circuit board. 0.22|iF decoupling

Altera ep310

Contextual Info: •JA HYUNDAI vi S EM IC O N D U C TO R H Y lfir V S 1 1 1 1 9 CMOS EEPLD L111202A— APR91 DESCRIPTION FEATURES The HY18CV8 is a CM OS Electrically Eras­ able Program mable Logic Device EEPLD that provides a high performance ; low power, reprogrammable and architecturally flexible

Contextual Info: ,Aj Hyundai ' f i HY531000 S E M IC O N D U C T O R 1 1 S ™ , M171202A-APR91 DESCRIPTION The HY531000 is a high speed, low power 1,048,576X1 bit CM OS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY531000 offers a fast

UAA 190

Abstract: AC613 HY51C
Contextual Info: A ] • ■ H H Y U N D A I SEMICONDUCTOR Y 5 1 C 1 0 0 0 iMxi-œt c m o s dram M131202B-APR91 DESCRIPTION FEATURES T he H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic random a c ­ cess m em ory. F abricated w ith the H Y U N D A I

Contextual Info: HY6116A .V« *H Y UNDAI SEMICONDUCTOR M211201B-APR91 FEATURES DESCRIPTION The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­ pled with innovative circuit design techniques,

Contextual Info: •<H gJSÄSÄJI H Y M 5C 9256 256KX 9-Bit CMOS DRAM MODULE M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynam ic RAM m odule and consists o f nine HY53C256LF Fast Page m ode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin glass-epoxy printed circuit board. 0.22pF de­

534256

Contextual Info: , ¿ 4 M 'à HY534256 1 H y u n d a i SEM ICONDUCTOR M181202A-APR91 FEATURES DESCRIPTION • Low power dissipation - Operating current, 100ns : 60mA max. - TTL standby current : 2mA(max.) -CM OS standby current : 1mA(max.) • Read-Modify-Write capability

CRL4

Abstract: s8100
Contextual Info: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10

HYM591

Abstract: HY531000J
Contextual Info: HYUNDAI 3 TE ELECTRONICS D • 4 b 7 S 0 fifl 0 0 0 0 3 *1 0 S «HYN K P ^ '^ V 'O m m M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin

hyundai tv hy 22 f circuit

Abstract: c 144 ESS HYM5C9256
Contextual Info: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin

HY93C46

Abstract: NMC9346
Contextual Info: « Hyundai SEMICONDUCTOR M* , HY93C46 M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem­ ory organized as 64 registers o f 16 bits each. Data can be written into or read out serially by most microprocessors or microcontrollers.

Contextual Info: 3 • ■ H y u n d a i SEMICONDUCTOR H 5 3 C Y 2 5 6 256K.X i-Kt c m o s d r a m M111201A-APR91 DESCRIPTION FEATURES The HY53C256 is a high speed 262,144X1 bit CM OS dynamic random access memory. Fabricated with HYUNDAI CM OS techno­ logy, the HY53C256 offers a fast page mode for

HY6264 RAM

Contextual Info: HY6264 HYUNDAI • ■ SEMICONDUCTOR »k x 8« S ilS M 2212 0 1 B-APR91 DESCRIPTION FEATURES The HY6264 is a high speed, low power 8,192 words by 8-bit CM OS static RAM fabrica­ ted using high performance CM OS process te­ chnology. This high reliability process coupled

Contextual Info: « ÏH IS ft! H 256KX8-HI Y M C5M OÇS DRAM 8 2MODULE 56 M 411202A-APR91 DESCRIPTION FEATURES The HYM5C8256 is a 256K words by 8 bits dynamic RAM m odule and consists of eight HY53C256LF Fast Page mode CMOS DRAM in 18 pin PLCC package mounted on a 30 pin glass-epoxy printed circuit board. 0.22|iF de­

100PF

Contextual Info: ’< M « H y u n d a i SEMICONDUCTOR „ * HY93C46 M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem­ ory organized as 64 registers of 16 bits each. D ata can be written into or read out serially by most microprocessors or microcontrollers.

Contextual Info: HY93C46 •HYUNDAI SEMICONDUCTOR 64 X 16-Bit CM OS SERIAL EE PROM M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem­ ory organized as 64 registers o f 16 bits each. D ata can be written into or read out serially by most microprocessors or microcontrollers.

HY6116A-10

Abstract: HY6116A
Contextual Info: D HY UN DA I E L E C T R O N I C S • 4b7S0flfl Q Q D Q 4 Q T b ■ HYNK M211201B-APR91 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­

Contextual Info: Hyundai SEM IC O N D U C TO R HYM591000 im x9-bíí cmos dram module M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin

Contextual Info: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast

Contextual Info: « }J • ■ ^ ,c uo ,ndudctao Ì SEMICONDUCTOR H Y im 5 8 1 0 0 0 M x8 -K t c m o s d r a m m o d u l e M431201B-APR91 DESCRIPTION The HYM581000 is a 1M words by 8 bits dy­ namic RAM module and consists of eight HY531000J Fast Page mode CM OS DRAM in 20/26 pin SOJ package m ounted on a 30 pin

Contextual Info: DWG NO. DO NOT DIMENSIONS REQ. PER ASSY 19,8 ITEM TRIC SCALE IN mm. 3rd ANGLE PROJECTION MATERIAL DESCRIPTION FINISH 4,3 *0,2 DIA. y CORTE A-A CORTE B-B SECTI ON SECTI ON <Â\ - RE30BINAR ¡NT£3CALA.':D0 COM PAPEL- R E E L I N G WI T H PAPHR-INTERLEÀVE.

LH5160N

Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
Contextual Info: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.