HY51V65173HG
Abstract: HY51V65173HGT
Text: HY51V65173HGJ-45/5/6E HY51V65173HGT-45/5/6E 4M x 16Bit EDO DRAM ET Part PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time 45ns or 50ns and refresh cycle(4K ref) and power consumption(Normal
|
Original
|
PDF
|
HY51V65173HGJ-45/5/6E
HY51V65173HGT-45/5/6E
16Bit
64Mbit
100us.
400mil
50pin
HY51V65173HG
HY51V65173HGT
|
Untitled
Abstract: No abstract text available
Text: HY51V65173HGJ-45/5/6I HY51V65173HGT-45/5/6I 4M x 16Bit EDO DRAM ET Part PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time 45ns or 50ns and refresh cycle(4K ref) and power consumption(Normal
|
Original
|
PDF
|
HY51V65173HGJ-45/5/6I
HY51V65173HGT-45/5/6I
16Bit
64Mbit
|
65173HG
Abstract: No abstract text available
Text: HY51V S 65173HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref) and power consumption(Normal
|
Original
|
PDF
|
HY51V
65173HG/HGL
16Bit
64Mbit
100us.
400mil
50pin
65173HG
|
Untitled
Abstract: No abstract text available
Text: HY51V65173HGJ T -6E 4Mxie, 3.3V, 4K Ret, EDO, ET DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera
|
OCR Scan
|
PDF
|
HY51V65173HGJ
64Mbit
16bit
100us.
4MX16,
400mil
50pin
64M-bit
|
Untitled
Abstract: No abstract text available
Text: HY51 V S 65173H G (HG L) 4Mx16, 3.3V, 4KRef, EDO DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera
|
OCR Scan
|
PDF
|
65173H
4Mx16,
64Mbit
16bit
10Ous.
400mil
50pin
64M-bit
|
Untitled
Abstract: No abstract text available
Text: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns
|
OCR Scan
|
PDF
|
8Mx72
7738280CTG
A6V8730E18H
71V65800Cx9
HY51V
65803HG
71V64403C
71V65403C
65403HG
|
edo ram 4Mx16
Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP
|
OCR Scan
|
PDF
|
16M-bit
16400C
17400C
16403C
17403C
16400HG
edo ram 4Mx16
71V18163CJ6
16mx4
edo ram 16Mx4
1MX16
|