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    HY51V65173HG

    Abstract: HY51V65173HGT
    Text: HY51V65173HGJ-45/5/6E HY51V65173HGT-45/5/6E 4M x 16Bit EDO DRAM ET Part PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time 45ns or 50ns and refresh cycle(4K ref) and power consumption(Normal


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    PDF HY51V65173HGJ-45/5/6E HY51V65173HGT-45/5/6E 16Bit 64Mbit 100us. 400mil 50pin HY51V65173HG HY51V65173HGT

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    Abstract: No abstract text available
    Text: HY51V65173HGJ-45/5/6I HY51V65173HGT-45/5/6I 4M x 16Bit EDO DRAM ET Part PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time 45ns or 50ns and refresh cycle(4K ref) and power consumption(Normal


    Original
    PDF HY51V65173HGJ-45/5/6I HY51V65173HGT-45/5/6I 16Bit 64Mbit

    Untitled

    Abstract: No abstract text available
    Text: HY51V65173HGJ T -6E 4Mxie, 3.3V, 4K Ret, EDO, ET DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera­


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    PDF HY51V65173HGJ 64Mbit 16bit 100us. 4MX16, 400mil 50pin 64M-bit