Untitled
Abstract: No abstract text available
Text: HY51V S 16400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY ESCRIPTION The HY51V(S)16400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)16400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16400HG/HGL offers Fast Page Mode as a high
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HY51V
16400HG/HGL
16400HG/HGL
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Untitled
Abstract: No abstract text available
Text: HY51 V S 16400HG(HGL) 4Mx4, 3.3V, 4 K R e f, FP ESCRIPTION T h e H Y 5 1 V (S )1 6 4 0 0 H G /H G L is the new generation dynam ic RA M organized 4 ,1 9 4 ,3 0 4 words x 4bit. Fast P age M ode capability R ead-m odify-w rite capability Multi-bit parallel test capability
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16400HG
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Untitled
Abstract: No abstract text available
Text: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns
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8Mx72
7738280CTG
A6V8730E18H
71V65800Cx9
HY51V
65803HG
71V64403C
71V65403C
65403HG
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edo ram 4Mx16
Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP
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16M-bit
16400C
17400C
16403C
17403C
16400HG
edo ram 4Mx16
71V18163CJ6
16mx4
edo ram 16Mx4
1MX16
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