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    HUF75309D3 Price and Stock

    Rochester Electronics LLC HUF75309D3S

    MOSFET N-CH 55V 19A DPAK
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    DigiKey HUF75309D3S Tube 14,180 1,025
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    HUF75309D3S Tube 1,687 1,025
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    onsemi HUF75309D3S

    MOSFET N-CH 55V 19A DPAK
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    DigiKey HUF75309D3S Tube
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    Harris Semiconductor HUF75309D3ST

    17A, 55V, 0.07OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HUF75309D3ST 2,490
    • 1 $0.72
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    Fairchild Semiconductor Corporation HUF75309D3S

    HUF75309 - N-Channel, ULTRAFET POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75309D3S 1,687 1
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    • 100 $0.2781
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    Fairchild Semiconductor Corporation HUF75309D3ST_NL

    19A, 55V, 0.07ohm, N-Channel Power MOSFET, TO-252AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75309D3ST_NL 597 1
    • 1 $0.4323
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    Find more HUF75309D3 price and stock on Findchips.com

    HUF75309D3 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HUF75309D3 Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3 Harris Semiconductor 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3 Intersil 19A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309D3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75309D3S Fairchild Semiconductor 19A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309D3S Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3S Harris Semiconductor 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3S Intersil 19A, 55V, 0.070 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75309D3ST Fairchild Semiconductor 19 A, 55 V, 0.070 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75309D3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-252, 3-Pin Original PDF
    HUF75309D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75309D3ST_NL Fairchild Semiconductor 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs Original PDF

    HUF75309D3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334

    75309P

    Abstract: 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S 43oducts 75309P 75309d AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334 317E-10 431E-6

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 17A, 55V • Ultra Low On-Resistance, rDS ON = 0.070Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S TB334, HUF75309 1-800-4-HARRIS 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334

    75309P

    Abstract: HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S 75309P HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3 TB334

    75309P

    Abstract: AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 17A, 55V The HUF75309 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 1-800-4-HARRIS 75309P AN9321 HUF75309D3 HUF75309D3S HUF75309D3ST HUF75309P3

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    HUF75307D

    Abstract: No abstract text available
    Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology


    Original     		PDF 5V/75A/0 OT-223 O-251AA/252AA O-220AB HUF75345P3 HUF75343P3 HUF75339P3 HUF75337P3 HUF75333P3 O-262AA/263AB HUF75307D

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRFP150N equivalent

    Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
    Text: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N


    Original     		PDF IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRFP150N equivalent IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original     		PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S

    75309P

    Abstract: TA75309
    Text: HUF75309P3, HUF75309D3, HUF75309D3S HARRIS S E M I C O N D U C T O R 17A, 55V, 0.070 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 17A, 55V • Ultra Low On-Resistance, ros ON = 0-070i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S 0-070i2 TB334, HUF75309 75309P TA75309

    TL 431 model SPICE

    Abstract: Simulation Model tl 431
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 TL 431 model SPICE Simulation Model tl 431

    75309P

    Abstract: No abstract text available
    Text: HUF75309P3, HUF75309D3, HUF75309D3S integri! D a ta S h e e t Ju n e 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power M O S F E Ts are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S por19A AN7254 AN7260. 75309P

    Diode LT n5

    Abstract: No abstract text available
    Text: HUF75309P3, HUF75309D3, HUF75309D3S S em iconductor Data Sheet June 1999 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. " This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 Diode LT n5