lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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RCV5932
Abstract: DR9301 LB7671 laser DFB 1550nm 10mW single hitachi DC9300 Photodiode, 1550nm, butterfly package laser DFB 1550nm 10mW DC9300 Arrayed Waveguide Grating 1550nm Laser Diode with butterfly pin package
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage DVD-RAM , Hitachi offers a complete line-up of 635nm to 830nm
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
RCV5932
DR9301
LB7671
laser DFB 1550nm 10mW single
hitachi DC9300
Photodiode, 1550nm, butterfly package
laser DFB 1550nm 10mW
DC9300
Arrayed Waveguide Grating
1550nm Laser Diode with butterfly pin package
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hitachi DC9300
Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
hitachi DC9300
1550nm Laser Diode with butterfly pin package
DC9300
1550nm Laser Diode butterfly
hitachi HL7851G
DR9301
780nm 10mW laser diodes
LB7671
RCV5932
laser DFB 1550nm 10mW
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laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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OPR 12 PHOTOCELL
Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In
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ADE-408-001E
HR1201CX
OPR 12 PHOTOCELL
photocell opr 12
HL7836MG
HE8807CL
cake power
hitachi HL7851G
HL7851
10G APD chip
"Hitachi, Ltd., 1997"
Hitachi laser diodes IR Pulsed
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hitachi he8812sg
Abstract: Hitachi DSA002726
Text: HE8812SG GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output
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HE8812SG
HE8812SG
HE8812:
hitachi he8812sg
Hitachi DSA002726
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hitachi he8812sg
Abstract: Hitachi DSA0087 HE8812SG
Text: HE8812SG GaAlAs Infrared Emitting Diode ADE-208-1000 Z 1st Edition Dec. 2000 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
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HE8812SG
ADE-208-1000
HE8812SG
HE8812:
hitachi he8812sg
Hitachi DSA0087
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HE8807SG
Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.
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Q012DE7
HL7831G/HG
HL7831G/HG
HL7831HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7831G
HL7831HG
HL8312E
Hitachi Scans-001
HE8403
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HE8811
Abstract: HE8403 HE8807SG HE8812SG HE8813VG HE8815VG HL7842MG HL8312E he8813 Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS S4E D • 4H1b2GS DDISDMT TMB HL7842MG (Preliminary)_ GaAiAs ld Description The HL7842MG is a 0.78 (im band GaAiAs laser diode with a double heterojunction structure. It is suit able as a light source for laser beam printers, laser levelers and various other types of optical equipment.
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HL7842MG
HL7842MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8811
HE8403
HE8807SG
HE8812SG
HE8813VG
HL8312E
he8813
Hitachi Scans-001
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HL1221A
Abstract: HL1221AC HL8312E Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOEL ECT RONICS 54E D • OGlSGfi? 7 5 b I 44^205 InGaAsP LD HL1221 A/AC Description The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.
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HL1221
HL1221A/AC
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL1221A
HL1221AC
HL8312E
Hitachi Scans-001
HE8403
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HL7802E
Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
Text: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.
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HL7802E/G
HL7802E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL7802E
HE8807SG
HE8813VG
HL7802G
HL8312E
Hitachi Scans-001
he8813
HE8403
T9040
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PDF
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T9040
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are
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HL8318E/G
441bEG5
HL8318E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
T9040
HE8807SG
HE8813VG
HL8312E
HL8318E
HL8318G
Hitachi Scans-001
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hitachi he1301
Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
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HL7838G
D0120L42
HL7838G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
hitachi he1301
HL8312E
laser GaAIAs de 5 mw 760 800
HE8807SG
HE8813VG
HL7838
Hitachi Scans-001
HE8403
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hitachi sr 302
Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
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HL1561A/AC/BF
DD121S3
HL1561A/AC/BF
HL1561BF
HL1561
HL1561BF)
561A/AC/BF)
HE8815VG
HE8813VG
HE8815VG
hitachi sr 302
te 1819
HL1561A
HL1561AC
10 gb laser diode
Hitachi Scans-001
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HE8813VG
Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Text: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
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OCR Scan
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HL8312E/G
HL8312E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8813VG
HE8403
HE8807SG
HE8811
HL8312E
HL8312G
HE84-03
Hitachi Scans-001
HE8807
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PDF
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HL8312E
Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
Text: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope
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OCR Scan
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HL7841MG
G012047
HL7841MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HL8312E
44FC
I00C
HE8807SG
HE8811
HE8812SG
HE8813VG
HE7601
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PDF
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HL8314E
Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment
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OCR Scan
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HL8314E/G
0G12a71
HL8314E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HL8314E
XP 215 hitachi
HE130
hitachi he1301
HL8314G
HE8807SG
HL8312E
Hitachi Scans-001
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PDF
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HE8815VG
Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.
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OCR Scan
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HL8311E/G
HL8311E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8807SG
HL8311E
HL8311G
HL8312E
Hitachi Scans-001
P015M
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PDF
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Thermistor bth 471
Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
Text: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier
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D01S14S
HL1541A/AC/FG/BF/DL/DM
D012140
HL1541
HL1541A/AC
HL1541FG
HL1541BF
HL1541DL
HE8815VG
HE8813VG
Thermistor bth 471
d 1548
10G 1550 optical laser in butterfly
HL1541A
HL1541DM
10 gb laser diode
AP-93
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PDF
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Untitled
Abstract: No abstract text available
Text: HE8812SG GaAIAs IRED Description T he H E 8 8 1 2 S G is a 8 7 0 nm band G aA IA s infrared light em itting diode w ith a double heterojunction struc ture. It is suitable as a light source for a w ide range o f optical control and sensing equipm ent. Features
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OCR Scan
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HE8812SG
HE8812SG:
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PDF
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Untitled
Abstract: No abstract text available
Text: HE8812SG GaAIAs IRED Description The HE8812SG is a 870 nm band GaAIAs infrared light emitting diode with a double heterojunction struc ture. It is suitable as a light source for a wide range o f optical control and sensing equipment. Features Package Type
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HE8812SG
HE8812SG
HE8812SG:
44RLi505
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PDF
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Untitled
Abstract: No abstract text available
Text: HE8812SG-Infrared Emitting Diodes IRED Description H E 8 8 1 2 S G is a 0 .8 7 ¿im G a A lA s in fra re d e m it tin g d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . H ig h b rig h tn e s s o u tp u t, h ig h p o w e r o u tp u t a n d
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HE8812SG---Infrared
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HE8807SG
Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play
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OCR Scan
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HL7832G/HG
G012D32
HL7832G/HG
HL7832HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7832G
HL7832HG
HL8312E
he8813vg
Hitachi Scans-001
LRTBGVTG-U9V5-1 A7A9-5 TT7-6
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PDF
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11w cfl circuit
Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Text: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm
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0G12135
HL1521A/AC/FG
HL1521A/AC/FG
HL1521FG)
HL1521FG
HL1521FG
HL1521
HE8815VG
HE8813VG
11w cfl circuit
HE8807SG
HL1521A
HL1521AC
HL8312E
LTH 1550 01
Hitachi Scans-001
44BA
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