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    Hitachi Ltd HE8812SG

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    HE8812SG Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HE8812SG Hitachi Semiconductor LED, Single, 870nm Wave Length Original PDF
    HE8812SG Hitachi Semiconductor GaAlAs Infrared Emitting Diodes Original PDF
    HE8812SG OpNext GaAlAs Infrared Emitting Diode Original PDF
    HE8812SG98 OpNext LED, Single, 870nm Wave Length Original PDF

    HE8812SG Datasheets Context Search

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    hitachi he8812sg

    Abstract: Hitachi DSA002726
    Text: HE8812SG GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output


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    PDF HE8812SG HE8812SG HE8812: hitachi he8812sg Hitachi DSA002726

    HE8812SG

    Abstract: No abstract text available
    Text: HE8812SG ODE-208-052 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original
    PDF HE8812SG ODE-208-052 HE8812SG HE8812:

    Untitled

    Abstract: No abstract text available
    Text: HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000B Z Rev.2 Mar. 2005 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original
    PDF HE8812SG ODE-208-1000B HE8812SG HE8812:

    HE8812SG

    Abstract: No abstract text available
    Text: HE8812SG GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output


    Original
    PDF HE8812SG HE8812SG HE8812:

    hitachi he8812sg

    Abstract: Hitachi DSA0087 HE8812SG
    Text: HE8812SG GaAlAs Infrared Emitting Diode ADE-208-1000 Z 1st Edition Dec. 2000 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original
    PDF HE8812SG ADE-208-1000 HE8812SG HE8812: hitachi he8812sg Hitachi DSA0087

    Untitled

    Abstract: No abstract text available
    Text: HE8812SG ODE-208-052A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original
    PDF HE8812SG ODE-208-052A HE8812SG HE8812SG:

    HE8812SG

    Abstract: No abstract text available
    Text: HE8812SG GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output


    Original
    PDF HE8812SG HE8812SG

    HE8812SG

    Abstract: No abstract text available
    Text: HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A Z Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original
    PDF HE8812SG ODE-208-1000A HE8812SG HE8812:

    Untitled

    Abstract: No abstract text available
    Text: HE8812SG ODE2063-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original
    PDF HE8812SG HE8812SG ODE2063-00 HE8812SG:

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original
    PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    opnext

    Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
    Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring


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    PDF D-85622 opdb-090103 opnext HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g

    hitachi DC9300

    Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
    Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes


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    PDF 635nm 830nm HE7601 HE8404 HE8807 HE8811 HE8812 HE7601SG HE8404SG hitachi DC9300 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


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    PDF OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G

    Untitled

    Abstract: No abstract text available
    Text: HE8812SG GaAIAs IRED Description T he H E 8 8 1 2 S G is a 8 7 0 nm band G aA IA s infrared light em itting diode w ith a double heterojunction struc­ ture. It is suitable as a light source for a w ide range o f optical control and sensing equipm ent. Features


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    PDF HE8812SG HE8812SG:

    Untitled

    Abstract: No abstract text available
    Text: HE8812SG-Infrared Emitting Diodes IRED Description H E 8 8 1 2 S G is a 0 .8 7 ¿im G a A lA s in fra re d e m it­ tin g d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . H ig h b rig h tn e s s o u tp u t, h ig h p o w e r o u tp u t a n d


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    PDF HE8812SG---Infrared

    Untitled

    Abstract: No abstract text available
    Text: Infrared Emitting Diode Description The H E8812SG is a GaAIAs double heterojunction structure 870 nm band light em itting diode. suitable for use as the light source in a wide range o f optical control and sensing equipment.


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    PDF E8812SG HE8812SG: HE8812SG

    HE8807SG

    Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
    Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­


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    PDF HL7832G/HG G012D32 HL7832G/HG HL7832HG) HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8807SG HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6

    HE1301

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are


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    PDF HL8319E/G 001EGÃ HL8319E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE1301 HE8807SG HE8813VG HL8312E HL8319E HL8319G Hitachi Scans-001

    HL7806

    Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
    Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G


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    PDF HL6314M HL6316G HL6411G* HL6315G HL6312G 6313G HL6720G HL6724M HL6712G HL6722G HL7806 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851

    Untitled

    Abstract: No abstract text available
    Text: Section 6 Reliability T h is section c o v e rs p o in ts w h ich p articularly affect cu rrent, etc. to drift, an d u ltim a tely lead to the en d th e o p e ra tin g life lig h t e m ittin g d e v ic e s , an d of p ro v id e s so m e e x a m p l e s w h ich sh o u ld be studied


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    PDF HE8813VG HE8811, HE8812SG, HE8404SG, HE7601SG HE8807

    HL7801

    Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
    Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838


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    PDF HL671IG HL671I HL7801 HL7802 HL7806 HL7831 HL7832 HL7836 HL7838 HL83H HE8807CL HL7801E HL1324MF HL83M HE8812 hitachi he1301

    HE8811

    Abstract: No abstract text available
    Text: Section 2 Chip Structures 2.1 Laser Diodes Structures 2.1.1 G aA lA s LD Structure T h e p - ty p e a c tiv e la y e r , in w h i c h s t i m u l a t e d emission enforces optical amplification figure 2 - 1 (a , is processed first. The p-n junction is made


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    HE8815VG

    Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
    Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.


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    PDF HL8311E/G HL8311E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M

    HL7836MG

    Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
    Text: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light


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    PDF HL7836G/MG HL7836G/MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HL7836MG HE8807SG HL7836G HL8312E Hitachi Scans-001