transformer ee10
Abstract: TFS759 smd optocoupler marking 530 5612a eSIP-16 TFS760 PC817XI1 TFS763 PC817X1J00F TFS758HG
Text: TFS757-764HG HiperTFS Family Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High Voltage MOSFETs Key Benefits • Single chip solution for two-switch forward main and flyback standby • High integration allows smaller form factor and higher power
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TFS757-764HG
transformer ee10
TFS759
smd optocoupler marking 530
5612a
eSIP-16
TFS760
PC817XI1
TFS763
PC817X1J00F
TFS758HG
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DSEE8-08CC
Abstract: 10P40
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
DSEE8-08CC
10P40
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34N80
Abstract: IXFN34N80 ixfx34n80
Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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34N80
247TM
34N80
IXFN34N80
ixfx34n80
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10104A
Abstract: 2x101-04A
Text: DSEP 2x 101-04A HiPerFREDTM Epitaxial Diode IFAV = 2x 100 A VRRM = 400 V trr = 30 ns with soft recovery VRSM VRRM V V 400 400 miniBLOC, SOT-227 B Type DSEP 2x 101-04A D4 Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 60°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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01-04A
OT-227
2x101-04A
10104A
2x101-04A
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50n60b
Abstract: 50n60 50N6 IXGH50N60B
Text: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60B
O-247
O-247AD
728B1
50n60b
50n60
50N6
IXGH50N60B
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vmo60
Abstract: ID100 VMO60-05F
Text: HiPerFETTM Power Module VMO 60-05F VDSS = 500 V ID25 = 60 A RDS on = 65 mW High dv/dt, Low trr, HDMOSTM Family 1 TO-240 AA 3 6 1 5 Preliminary Data 5 6 3 1 = Drain 5 = Gate Symbol Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 10 kW
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60-05F
O-240
ID100
Mountin50
vmo60
ID100
VMO60-05F
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60-06A
Abstract: DSEP30-06A DSEC60-06A
Text: DSEC 60-06A DSEC 60-06B HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 600 V trr = 30/35 ns with common cathode and soft recovery VRSM VRRM V V 600 600 600 600 TO-247 AD Type DSEC 60-06A DSEC 60-06B A C A C A A C TAB A = Anode, C = Cathode, TAB = Cathode
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0-06A
60-06B
O-247
60-06A
DSEP30-06A
DSEC60-06A
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17n80
Abstract: 17N80Q
Text: HiPerFETTM Power MOSFETs IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS on Q-Class = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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17N80Q
O-268
728B1
123B1
728B1
065B1
17n80
17N80Q
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73N30
Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30
Text: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK
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O-264
73N30
"SOT-227 B" dimensions
SOT-227 Package
ixfk73n30
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20N60B
Abstract: s9011
Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient
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20N60B
O-24s
20N60B
s9011
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58N2
Abstract: 58N20
Text: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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58N20Q
O-268
O-268
58N2
58N20
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ixf26n50q
Abstract: 24N50 26N50Q 125OC ixf26N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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24N50Q
26N50Q
125OC
728B1
ixf26n50q
24N50
26N50Q
125OC
ixf26N50
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24N50
Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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26N50
ISOPLUS247TM
24N50
247TM
IXFR26N50
IXFR24N50
IXFH26N50
24N50
26N50
.24n50
IXFR24N50
IXFR26N50
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information Dual HiPerFREDTM Epitaxial Diode DSEE 55-24N1F in ISOPLUS i4-PACTM VRRM = 2400 V IF AV M = 55 A trr = 220 ns 1 3 1 3 5 5 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM c VRRM IFAV IF(AV)M IFSM TC = 90°C; sine 180°
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55-24N1F
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24N100
Abstract: 23N10 125OC
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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24N100
23N100
24N100
23N100
OT-227
E153432
125oC
23N10
125OC
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20n60B
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20
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20N60B
O-220AB
O-263
20n60B
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50n50
Abstract: 55N50 150N50 IXFK55N50
Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR
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ISOPLUS247TM
50N50
55N50
247TM
IXFK55N50
50N50
55N50
150N50
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60n10
Abstract: IXTH60N10
Text: Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ
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60N10
TJM15
O-268
728B1
123B1
728B1
065B1
60n10
IXTH60N10
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IXFH23N80Q
Abstract: transistor N 343 AD
Text: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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IXFH23N80Q
IXFT23N80Q
728B1
123B1
728B1
065B1
IXFH23N80Q
transistor N 343 AD
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125OC
Abstract: 32N50Q
Text: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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32N50Q
32N50Q
125OC
125OC
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VMO 440
Abstract: ixys VMO 440 VMO 550-01F lb 1470 2360A
Text: HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V = 590 A ID25 RDS on = 2.1 mW D N-Channel Enhancement Mode G E 72873 G Preliminary Data S KS S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW 100 V VGS Continuous
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550-01F
VMO 440
ixys VMO 440
VMO 550-01F
lb 1470
2360A
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230N10
Abstract: IXFN 230N10 230N10
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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230N10
230N10
IXFN 230N10 230N10
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26N50
Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM
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ISOPLUS220TM
26N50
24N50
220LVTM
IXFC26N50
IXFC24N50
IXFH26N50
728B1
123B1
728B1
26N50
IXFC 26N50
24N50
ixfc26n50
.26n50
.24n50
IXFC24N50
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62n25
Abstract: 62n25 mosfet 62n2 247TM
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient
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62N25
247TM
O-264
728B1
62n25
62n25 mosfet
62n2
247TM
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