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    23N100 Search Results

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    23N100 Price and Stock

    IXYS Corporation IXFE23N100

    MOSFET N-CH 1000V 21A SOT227B
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    DigiKey IXFE23N100 Box
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    IXYS Corporation IXFN23N100

    MOSFET N-CH 1000V 23A SOT-227B
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    DigiKey IXFN23N100 Tube
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    Mouser Electronics IXFN23N100
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    Torex Semiconductor LTD XP223N1001TR-G

    Power MOSFET, N Channel, 20 V, 1 A, 0.15 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: XP223N1001TR-G)
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    Avnet Americas XP223N1001TR-G Reel 12 Weeks 3,000
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    TME XP223N1001TR-G 10
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    TE Connectivity 15723N100

    Electromechanical Relay 6VAC 4.2Ohm 10A 3PDT (( 38.89mm 35.71mm 55.55mm)) Plain Case Industrial Relay
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    Master Electronics 15723N100 39
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    23N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24N100

    Abstract: 23N10 125OC
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC

    24N100

    Abstract: "SOT-227 B" dimensions 125OC
    Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC "SOT-227 B" dimensions 125OC

    24N100

    Abstract: 23N100
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 227TM

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		PDF 24N100 23N100 24N100 23N100 OT-227 E153432 125oC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die 0.39 Ω 0.43 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 227TM IXFN24N100 24N100:

    24N100

    Abstract: 23N10 IXFN24N100
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 24N100 23N100 24N100 23N100 227TM IXFN24N100 23N10