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    Vishay Siliconix SIHA17N80E-GE3

    N-CHANNEL 800V
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    DigiKey SIHA17N80E-GE3 Cut Tape 1,980 1
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    SIHA17N80E-GE3 Reel 1,000 1,000
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    Infineon Technologies AG SPP17N80C3XKSA1

    MOSFET N-CH 800V 17A TO220-3
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    DigiKey SPP17N80C3XKSA1 Tube 1,870 1
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    Avnet Americas SPP17N80C3XKSA1 Tube 211 15 Weeks 50
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    SPP17N80C3XKSA1 Tube 1
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    Mouser Electronics SPP17N80C3XKSA1 421
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    Newark SPP17N80C3XKSA1 Bulk 664 1
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    Bristol Electronics SPP17N80C3XKSA1 13
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    Rochester Electronics SPP17N80C3XKSA1 386 1
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    EBV Elektronik SPP17N80C3XKSA1 16 Weeks 500
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    Vyrian SPP17N80C3XKSA1 1,751
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    Win Source Electronics SPP17N80C3XKSA1 132,000
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    Vishay Siliconix SIHA17N80AE-GE3

    MOSFET N-CH 800V 7A TO220
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    DigiKey SIHA17N80AE-GE3 Tube 999 1
    • 1 $1.66
    • 10 $1.408
    • 100 $1.2954
    • 1000 $1.19358
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    Vishay Siliconix SIHB17N80AE-GE3

    MOSFET N-CH 800V 15A D2PAK
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    DigiKey SIHB17N80AE-GE3 Tube 983 1
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    Bristol Electronics SIHB17N80AE-GE3 200
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    Vishay Siliconix SIHG17N80AE-GE3

    MOSFET N-CH 800V 15A TO247AC
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    DigiKey SIHG17N80AE-GE3 Tube 748 1
    • 1 $3.45
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    • 10000 $1.402
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    17N80 Datasheets Context Search

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    17n80

    Abstract: 17N80Q
    Text: HiPerFETTM Power MOSFETs IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS on Q-Class = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		17N80Q O-268 728B1 123B1 728B1 065B1 17n80 17N80Q PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS on Q-Class = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		17N80Q 17N80Q O-268 O-247 125OC 728B1 123B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFH 17N80Q IXFT 17N80Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		17N80Q 728B1 123B1 728B1 065B1 PDF

    17N80C3

    Abstract: 17n80c 17n80 SPP17N80C3 SPB17N80C3
    Text: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS 800 V  Ultra low gate charge RDS(on) 290 m Periodic avalanche rated


    Original     		SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 17n80c 17n80 SPP17N80C3 SPB17N80C3 PDF

    17n80c3

    Abstract: SPA17 17n80
    Text: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated


    Original     		SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 SPA17N80C3 17N80C3 17N80C3 SPA17 17n80 PDF

    17n80c3

    Abstract: 17n80 spa17n80c3 17N80C SPB17N80C3 UJ14 Q67040-S4441
    Text: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge P-TO220-3-31 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO263-3-2 P-TO220-3-1


    Original     		SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO-220-3-31: SPP17N80C3 SPA17N80C3 P-TO220-3-1 P-TO263-3-2 Q67040-S4353 17n80c3 17n80 17N80C UJ14 Q67040-S4441 PDF

    MOSFET 17N80c3

    Abstract: 17n80
    Text: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17n80 PDF

    MOSFET 17N80c3

    Abstract: smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47
    Text: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47 PDF

    Untitled

    Abstract: No abstract text available
    Text: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPB17N80C3 PG-TO263 17N80C3 PDF

    17n80

    Abstract: 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c
    Text: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c PDF

    17N80C3

    Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3
    Text: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 290 mΩ


    Original     		SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 SPP17N80C3 17n80 17n80c SPB17N80C3 PDF

    17n80

    Abstract: 17n80c SPW17N80C3A 17N80C3
    Text: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80 17n80c SPW17N80C3A 17N80C3 PDF

    17n80c3

    Abstract: 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3
    Text: Preliminary data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated


    Original     		SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 17n80c3 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPB17N80C3 PG-TO263 SPB17N80C3 Q67040-S4354 17N80C3 PDF

    17n80c3

    Abstract: No abstract text available
    Text: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP17N80C3 PG-TO220-3 17N80C3 17n80c3 PDF

    17n80c3

    Abstract: UJ14
    Text: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220 SPA17N80C3 Q67040-S4353 17n80c3 UJ14 PDF

    17n80c

    Abstract: 17n80 Q67040-S4359 17n80c3 C1814
    Text: 17N80C3 Final data Cool MOS Power Transistor Feature • Worldwide best RDS on in TO 247 Product Summary V VDS 800 • Ultra low gate charge R DS(on) • Periodic avalanche rated ID • New revolutionary high voltage technology • Extreme dv/dt rated


    Original     		SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80c 17n80 Q67040-S4359 17n80c3 C1814 PDF

    SPW17N80C3 INFINEON

    Abstract: SPW17N80C3 17n80c
    Text: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 247 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated


    Original     		SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 SPW17N80C3 INFINEON SPW17N80C3 17n80c PDF

    17n80

    Abstract: No abstract text available
    Text: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		SPW17N80C3 PG-TO247 SPW17N80C3 Q67040-S4359 17N80C3 17n80 PDF

    MOSFET 17N80c3

    Abstract: 17n80c3 17n80c 17n80 JESD22 SPW17N80C3
    Text: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 17n80c3 17n80c 17n80 JESD22 SPW17N80C3 PDF

    17n80c3

    Abstract: No abstract text available
    Text: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated


    Original     		SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 Q67040-S4353 17n80c3 PDF

    MOSFET 17N80c3

    Abstract: Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c
    Text: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c PDF

    17n80c3

    Abstract: 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 PG-TO220-3-31 SPP17N80C3
    Text: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17n80c3 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 SPP17N80C3 PDF

    MOSFET 17N80c3

    Abstract: 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PG-TO247-3
    Text: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPW17N80C3 PG-TO247-3 17N80C3 009-134-A O-247 PG-TO247-3 MOSFET 17N80c3 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PDF