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    GT50 Price and Stock

    onsemi NLVVHC1GT50DFT1G

    IC BUFFER NON-INVERT 5.5V SC88A
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    DigiKey NLVVHC1GT50DFT1G Reel 6,000 3,000
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    Avnet Americas NLVVHC1GT50DFT1G Reel 0 Weeks, 2 Days 20,000
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    Bristol Electronics NLVVHC1GT50DFT1G 10,686
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    NLVVHC1GT50DFT1G 2,791
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    Chip 1 Exchange NLVVHC1GT50DFT1G 235,300
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    Acopian Power Supplies B30GT50

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    Acopian Power Supplies VB35GT50M

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    Acopian Power Supplies VB40GT50M

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    Acopian Power Supplies VB30GT500M

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    DigiKey VB30GT500M Bulk 1,000 1
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    GT50 Datasheets (120)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT-50 MCE / KDI ATTENUATOR, PIN DIODE Original PDF
    GT5010 GTRAN transimpedance amplifier Original PDF
    GT502F1K US Sensor/Littelfuse Sensors, Transducers - Temperature Sensors - NTC Thermistors - NTC THERMISTOR 5K OHM 10% BEAD Original PDF
    GT503J1K US Sensor/Littelfuse Sensors, Transducers - Temperature Sensors - NTC Thermistors - NTC THERMISTOR 50K OHM 10% BEAD Original PDF
    GT50G101 Toshiba Discrete IGBTs Original PDF
    GT50G102 Toshiba Discrete IGBTs Original PDF
    GT50G321 Toshiba Discrete IGBTs Original PDF
    GT50G321 Toshiba TRANS IGBT CHIP N-CH 400V 50A 3(2-21F2C) Original PDF
    GT50G321 Toshiba Discrete IGBTs Original PDF
    GT50G321 Toshiba SILICON N CHANNEL IGBT Scan PDF
    GT50G321 Toshiba Scan PDF
    GT50G321(Q) Toshiba TRANS IGBT CHIP N-CH 400V 50A 3(2-21F2C) Original PDF
    GT50J101 Toshiba Discrete IGBTs Original PDF
    GT50J101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT50J101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT50J101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT50J101 Toshiba TRANSISTOR IGBT 50A 600V Scan PDF
    GT50J102 Toshiba Discrete IGBTs Original PDF
    GT50J102 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Original PDF
    GT50J102 Toshiba Discrete IGBTs Original PDF

    GT50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gt50j341

    Abstract: No abstract text available
    Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)


    Original     		PDF GT50J341 gt50j341

    Untitled

    Abstract: No abstract text available
    Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J121

    GT50MR21

    Abstract: IGBT application notes
    Text: GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT50MR21 GT50MR21 IGBT application notes

    gt50nr21

    Abstract: gt50n
    Text: GT50NR21 Discrete IGBTs Silicon N-Channel IGBT GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT50NR21 gt50nr21 gt50n

    Untitled

    Abstract: No abstract text available
    Text: GT50JR22 ディスクリートIGBT シリコンNチャネルIGBT GT50JR22 1. 用途 • 電流共振インバータスイッチング専用 注意:本資料に掲載されている製品を上記以外の用途に使用しないでください。 2. 特長


    Original     		PDF GT50JR22

    Untitled

    Abstract: No abstract text available
    Text: GT50J342 ディスクリートIGBT シリコンNチャネルIGBT GT50J342 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 50 A) (3) 接合温度が高い: Tj = 175 (最大) (4)


    Original     		PDF GT50J342

    GT50J301

    Abstract: bipolar power transistor data toshiba set igbt on off Vge
    Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT50J301 GT50J301 bipolar power transistor data toshiba set igbt on off Vge

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325 GT50J325

    GT50J121

    Abstract: GT50J325
    Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J121 GT50J121 GT50J325

    GT50J322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		PDF GT50J322 GT50J322

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325 GT50J325

    Untitled

    Abstract: No abstract text available
    Text: GT50NR21 Discrete IGBTs Silicon N-Channel IGBT GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT50NR21

    gt50j322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		PDF GT50J322 gt50j322

    50J328

    Abstract: GT50J328 TF01S
    Text: GT50J328 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J328 単位 : mm ○ 電流共振スイッチング用 ○ IH 調理器用・IH 機器用 z 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT50J328 2-16C1C 50J328 2002/95/EC) 00A/s 50J328 GT50J328 TF01S

    GT50J325

    Abstract: No abstract text available
    Text: GT50J325 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J325 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


    Original     		PDF GT50J325 2-21F2C 20070701-JA GT50J325

    IC-50A

    Abstract: GT50J322 2-21F2C
    Text: GT50J322 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J322 ○ 第 4 世代 単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf=0.25 s 標準 (IC=50A)


    Original     		PDF GT50J322 2-21F2C 20070701-JA IC-50A GT50J322 2-21F2C

    GT50J121

    Abstract: GT50J325
    Text: GT50J121 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J121 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


    Original     		PDF GT50J121 2-21F2C 20070701-JA GT50J121 GT50J325

    Untitled

    Abstract: No abstract text available
    Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)


    Original     		PDF GT50J341

    gt50j325

    Abstract: GT50J325 Toshiba
    Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT50J325 gt50j325 GT50J325 Toshiba

    GT5010

    Abstract: 457789 GTran SONET/OC-192 B102 STM-64
    Text: Description The GT5010 is a high performance SiGe 12.5GB/s transimpedance amplifier IC designed for use in receiver modules for fiber optic transmission systems such as SDH STM-64 and SONET OC-192. It is also suitable for 12.5 Gb/s dual forward error correction


    Original     		PDF GT5010 STM-64 OC-192. 457789 GTran SONET/OC-192 B102 STM-64

    GT50JR21

    Abstract: No abstract text available
    Text: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT50JR21 GT50JR21

    GT50J102

    Abstract: No abstract text available
    Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.


    OCR Scan     		PDF GT50J102 961001EAA GT50J102

    gt50j

    Abstract: No abstract text available
    Text: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2


    OCR Scan     		PDF GT50J102 2-21F2C gt50j

    GT50G102

    Abstract: P channel 50A IGBT
    Text: GT50G102 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TYPE STROBE FLASH APPLICATIONS Unit in mm 15.9 MAX, . High Input Impedance . High Speed 03.2±O.2 : tf=l.3 Js(Typ. . Low Saturation Voltage: VcE(sat)=4.0V(Max.)(Ic=50A) . Enhancement-Mode . Recommended Cm =650 h F


    OCR Scan     		PDF GT50G102 GT50G102 P channel 50A IGBT