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    GT50J341 Price and Stock

    Toshiba America Electronic Components GT50J341,Q

    PB-F IGBT / TRANSISTOR TO-3PN IC
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    DigiKey GT50J341,Q Tray 51 1
    • 1 $4.51
    • 10 $2.984
    • 100 $2.18038
    • 1000 $1.64625
    • 10000 $1.64625
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    Avnet Americas GT50J341,Q Tray 18 Weeks 100
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    • 100 $2.01501
    • 1000 $1.72527
    • 10000 $1.68576
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    Mouser Electronics GT50J341,Q
    • 1 $4.18
    • 10 $2.96
    • 100 $2.18
    • 1000 $1.64
    • 10000 $1.64
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    Toshiba America Electronic Components GT50J341,Q(O)

    IGBT discrete
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop GT50J341,Q(O) 105
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    • 10 $10.6
    • 100 $8.7
    • 1000 $8.7
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    Toshiba America Electronic Components GT50J341,Q(O

    (Alt: GT50J341,Q(O)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik GT50J341,Q(O 21 Weeks 100
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    GT50J341 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT50J341 Toshiba GT50J341 - TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1S, TO-3P(N), 3 PIN, Insulated Gate BIP Transistor Original PDF

    GT50J341 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gt50j341

    Abstract: No abstract text available
    Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)


    Original     		PDF GT50J341 gt50j341

    Untitled

    Abstract: No abstract text available
    Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)


    Original     		PDF GT50J341

    Untitled

    Abstract: No abstract text available
    Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)


    Original     		PDF GT50J341

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075