GT50JR21 Search Results
GT50JR21 Price and Stock
Toshiba America Electronic Components GT50JR21(STA1,E,S)PB-F IGBT / TRANSISTOR TO-3PN(OS |
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GT50JR21(STA1,E,S) | Tube | 39 | 1 |
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GT50JR21(STA1,E,S) | 50 |
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GT50JR21(STA1,E,S) | 1 |
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GT50JR21(STA1,E,S) | 45 |
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GT50JR21(STA1,E,S) | 21 Weeks | 25 |
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Toshiba America Electronic Components GT50JR21(STA1ES)IGBTs - Trays (Alt: GT50JR21(STA1,E,S)) |
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GT50JR21(STA1ES) | Tray | 12 Weeks | 25 |
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Toshiba America Electronic Components GT50JR21STA1ESSILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT50JR21STA1ES | 150 |
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Toshiba America Electronic Components GT50JR21STA1SILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT50JR21STA1 | 100 |
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GT50JR21 Datasheets (2)
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Japanese - Transistors | Original | |||
GT50JR21 |
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Transistors | Original |
GT50JR21 Datasheets Context Search
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