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Toshiba America Electronic Components GT50J341,Q PB-F IGBT / TRANSISTOR TO-3PN IC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT50J341,Q	Tray	66		1	1 $4.51 10 $2.984 100 $2.18038 1000 $1.64625 10000 $1.64625	Buy Now
Avnet Americas	GT50J341,Q	Tray		18 Weeks	100	1 - 10 - 100 $2.01501 1000 $1.72527 10000 $1.68576	Buy Now
Mouser Electronics	GT50J341,Q					1 $3.42 10 $2.72 100 $2.27 1000 $1.66 10000 $1.64	Get Quote
Toshiba America Electronic Components GT50JR21(STA1,E,S) PB-F IGBT / TRANSISTOR TO-3PN(OS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT50JR21(STA1,E,S)	Tube	39		1	1 $5.59 10 $3.736 100 $2.6836 1000 $2.195 10000 $2.195	Buy Now
Mouser Electronics	GT50JR21(STA1,E,S)		50			1 $4.56 10 $4.16 100 $3.09 1000 $2.21 10000 $2.21	Buy Now
TME	GT50JR21(STA1,E,S)				1	1 $4.91 10 $3.9 100 $3.51 1000 $3.51 10000 $3.51	Get Quote
EBV Elektronik	GT50JR21(STA1,E,S)			21 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components GT50JR22(STA1,E,S) PB-F IGBT / TRANSISTOR TO-3PN(OS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT50JR22(STA1,E,S)	Tube	25		1	1 $5.59 10 $3.736 100 $2.6836 1000 $2.195 10000 $2.195	Buy Now
Mouser Electronics	GT50JR22(STA1,E,S)		20			1 $4.56 10 $4.34 100 $2.97 1000 $2.21 10000 $2.21	Buy Now
Newark	GT50JR22(STA1,E,S)	Bulk	54		1	1 $5.3 10 $4.79 100 $3.73 1000 $3.37 10000 $3.37	Buy Now
TME	GT50JR22(STA1,E,S)		250		1	1 $4.34 10 $3.38 100 $3.04 1000 $3.04 10000 $3.04	Buy Now
EBV Elektronik	GT50JR22(STA1,E,S)			21 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components GT50J121(Q) IGBT 600V 50A 240W TO3P LH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT50J121(Q)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components GT50JR21(STA1ES) IGBTs - Trays (Alt: GT50JR21(STA1,E,S))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	GT50JR21(STA1ES)	Tray		12 Weeks	25	1 - 10 - 100 $2.49352 1000 $2.30036 10000 $2.24768	Buy Now

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GT50J Datasheets (42)

Part	Manufacturer	Description	Type	PDF
GT50J101	Toshiba	Discrete IGBTs	Original	PDF
GT50J101	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
GT50J101	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
GT50J101	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
GT50J101	Toshiba	TRANSISTOR IGBT 50A 600V	Scan	PDF
GT50J102	Toshiba	Discrete IGBTs	Original	PDF
GT50J102	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Original	PDF
GT50J102	Toshiba	Discrete IGBTs	Original	PDF
GT50J102	Toshiba	Insulated Gate Bipolar Transistor Silicon N-Channel IGBT	Scan	PDF
GT50J121	Toshiba		Original	PDF
GT50J121	Toshiba	High-Speed IGBTs	Original	PDF
GT50J121	Toshiba	Discrete IGBTs	Original	PDF
GT50J121	Toshiba	Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Original	PDF
GT50J121(Q)	Toshiba	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 240W TO3P LH	Original	PDF

GT50J122	Toshiba	N-channel IGBT	Original	PDF
GT50J122	Toshiba	Discrete IGBTs	Original	PDF
GT50J301	Toshiba	TRANS IGBT CHIP N-CH 600V 50A 3(2-21F2C)	Original	PDF
GT50J301	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Original	PDF
GT50J301	Toshiba	Discrete IGBTs	Original	PDF
GT50J301	Toshiba	Discrete IGBTs	Original	PDF

GT50J Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
gt50j341 Abstract: No abstract text available Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)	Original	PDF	GT50J341 gt50j341
Untitled Abstract: No abstract text available Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT50J121
Untitled Abstract: No abstract text available Text: GT50JR22 ディスクリートIGBT シリコンNチャネルIGBT GT50JR22 1. 用途 • 電流共振インバータスイッチング専用注意:本資料に掲載されている製品を上記以外の用途に使用しないでください。 2. 特長	Original	PDF	GT50JR22
Untitled Abstract: No abstract text available Text: GT50J342 ディスクリートIGBT シリコンNチャネルIGBT GT50J342 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 50 A) (3) 接合温度が高い: Tj = 175 (最大) (4)	Original	PDF	GT50J342
GT50J301 Abstract: bipolar power transistor data toshiba set igbt on off Vge Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)	Original	PDF	GT50J301 GT50J301 bipolar power transistor data toshiba set igbt on off Vge
GT50J325 Abstract: No abstract text available Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT50J325 GT50J325
GT50J121 Abstract: GT50J325 Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT50J121 GT50J121 GT50J325
GT50J322 Abstract: No abstract text available Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)	Original	PDF	GT50J322 GT50J322
GT50J325 Abstract: No abstract text available Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT50J325 GT50J325
gt50j322 Abstract: No abstract text available Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)	Original	PDF	GT50J322 gt50j322
50J328 Abstract: GT50J328 TF01S Text: GT50J328 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT50J328 単位 : mm ○ 電流共振スイッチング用 ○ IH 調理器用・IH 機器用 z 取り扱いが簡単なエンハンスメントタイプです。	Original	PDF	GT50J328 2-16C1C 50J328 2002/95/EC) 00A/s 50J328 GT50J328 TF01S
GT50J301 Abstract: No abstract text available Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)	Original	PDF	GT50J301 2-21F2C GT50J301
GT50J325 Abstract: No abstract text available Text: GT50J325 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT50J325 ○ 大電力スイッチング用 ○ 高速スイッチング用単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ	Original	PDF	GT50J325 2-21F2C 20070701-JA GT50J325
IC-50A Abstract: GT50J322 2-21F2C Text: GT50J322 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT50J322 ○ 第 4 世代単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf=0.25 s 標準 (IC=50A)	Original	PDF	GT50J322 2-21F2C 20070701-JA IC-50A GT50J322 2-21F2C

Untitled Abstract: No abstract text available Text: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)	Original	PDF	GT50J341
gt50j325 Abstract: GT50J325 Toshiba Text: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT50J325 gt50j325 GT50J325 Toshiba
GT50JR21 Abstract: No abstract text available Text: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)	Original	PDF	GT50JR21 GT50JR21
gt50j301 Abstract: No abstract text available Text: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage	Original	PDF	GT50J301 2-21F2C gt50j301
GT50J102 Abstract: No abstract text available Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.	OCR Scan	PDF	GT50J102 961001EAA GT50J102
gt50j Abstract: No abstract text available Text: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2	OCR Scan	PDF	GT50J102 2-21F2C gt50j
GT50J101 Abstract: No abstract text available Text: GT50J101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm . High Input Impedance : tf=0.35ns Max. io -6 . . P •» < = i —r _\| sl = . Low Saturation Voltage : VcE(sat)=4 .0V(Max.) ) 2.50 . Enhancement-Mode j L 'i i l 3.0 +2.5 1.0-0 .2 5 I'.AXIMUM RATINGS (Ta=25°C)	OCR Scan	PDF	GT50J101 GT50J101
Untitled Abstract: No abstract text available Text: TO S H IBA GT50J301 T O S H IB A IN S U L A T E D G ATE B IP O L A R TR A N S IS T O R SILICO N N C H A N N E L IG BT GT50J301 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S Z0.5M AX. The 3rd Generation	OCR Scan	PDF	GT50J301
dh 1117 Abstract: No abstract text available Text: TOSHIBA GT50J322 T O S H IB A IN S U L A T E D GATE BIPO LAR T R A N SISTO R SILICO N N C H A N N E L M O S TYPE GT50J322 Unit in mm TH E 4 T H G E N E R A T IO N C U R R EN T RESO NA NCE INVERTER S W IT C H IN G A P P L IC A T IO N S • • • • FRD Included Between Emitter and Collector	OCR Scan	PDF	GT50J322 ic1998 dh 1117
GT50J101 Abstract: CP100 Text: GT50J101 HIGH POWER S W I T C H I N G A P P L I C A T I O N S . Unit 20.5MAX High Input I m p e d an ce High Speed tf=0. 35/is Max. Low S a t u r a t i o n Vo lt a g e v C E ( s a t ) = 4 .0 V ( M a x .) in m m 0 3.3 ±0.2 Enhancement-Mode 2.5 3.0 MAXI MUM R A T I N G S	OCR Scan	PDF	GT50J101 35/is GT50J101 CP100

GT50J Search Results

GT50J Price and Stock

Toshiba America Electronic Components GT50J341,Q

Toshiba America Electronic Components GT50JR21(STA1,E,S)

Toshiba America Electronic Components GT50JR22(STA1,E,S)

Toshiba America Electronic Components GT50J121(Q)

Toshiba America Electronic Components GT50JR21(STA1ES)

GT50J Datasheets (42)

GT50J Datasheets Context Search

gt50j341

Untitled

Untitled

Untitled

GT50J301

GT50J325

GT50J121

GT50J322

GT50J325

gt50j322

50J328

GT50J301

GT50J325

IC-50A

Untitled

gt50j325

GT50JR21

gt50j301

GT50J102

gt50j

GT50J101

Untitled

dh 1117

GT50J101