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    ROHM Semiconductor RGT50NL65DGTL

    IGBT TRENCH FIELD 650V 48A LPDS
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    RGT50NL65DGTL Cut Tape 368 1
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    RGT50NL65DGTL Digi-Reel 1
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    Mouser Electronics RGT50NL65DGTL 1,125
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    Ameya Holding Limited RGT50NL65DGTL 751 1
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    CoreStaff Co Ltd RGT50NL65DGTL 3,000
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    RGT50NL65DGTL 1,900
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    ROHM Semiconductor RGT50NS65DGTL

    IGBT TRENCH FIELD 650V 48A LPDS
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    DigiKey RGT50NS65DGTL Reel 1,000 1,000
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    RGT50NS65DGTL Digi-Reel 1
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    Mouser Electronics RGT50NS65DGTL 803
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    Newark RGT50NS65DGTL Cut Tape 12 1
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    TME RGT50NS65DGTL 1
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    Avnet Silica RGT50NS65DGTL 29 Weeks 1,000
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    CoreStaff Co Ltd RGT50NS65DGTL 1,000
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    RGT50NS65DGTL 950
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    ROHM Semiconductor RGT50NS65DGC9

    IGBT TRENCH FIELD 650V 48A TO262
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    DigiKey RGT50NS65DGC9 Tube 478 1
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    Mouser Electronics RGT50NS65DGC9 916
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    Newark RGT50NS65DGC9 Bulk 27 1
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    TME RGT50NS65DGC9 1
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    Ameya Holding Limited RGT50NS65DGC9 40 1
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    CoreStaff Co Ltd RGT50NS65DGC9 1,000
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    RGT50NS65DGC9 23
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    Toshiba America Electronic Components GT50N322A

    IGBT 1000V 50A TO3P
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    DigiKey GT50N322A Tray 84 1
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    Avnet Americas GT50N322A Tube 24 Weeks 50
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    Mouser Electronics GT50N322A 129
    • 1 $5.11
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    IXYS Corporation IXGT50N60B2

    IGBT PT 600V 75A TO268AA
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    Find more GT50N price and stock on Findchips.com

    GT50N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT50N321 Toshiba Discrete IGBTs Original PDF
    GT50NR21 Toshiba GT50NR21 - TRANSISTOR 50 A, 1050 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1S, TO-3P(N), 3 PIN, Insulated Gate BIP Transistor Original PDF

    GT50N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gt50nr21

    Abstract: gt50n
    Text: GT50NR21 Discrete IGBTs Silicon N-Channel IGBT GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT50NR21 gt50nr21 gt50n

    Untitled

    Abstract: No abstract text available
    Text: GT50NR21 Discrete IGBTs Silicon N-Channel IGBT GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT50NR21

    GT50N321

    Abstract: gt50 GT-50
    Text: GT50N321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50N321 ○ 電圧共振インバータスイッチング用 ○ 第 4 世代 単位: mm • 高速 FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT50N321 2-16C1C 20070701-JA GT50N321 gt50 GT-50

    50N322

    Abstract: GT50N322 50N322A GT50N322A TOSHIBA IGBT DATA BOOK gt50n
    Text: GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.10 s typ. (IC = 60 A)


    Original     		PDF GT50N322A 50N322 GT50N322 50N322A GT50N322A TOSHIBA IGBT DATA BOOK gt50n

    50N322

    Abstract: 50N322A GT50N322A GT50N322 ic501
    Text: GT50N322A 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50N322A ○ 電圧共振インバータスイッチング用 ○ 第 5 世代 単位: mm • FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT50N322A 2-16C1C 50N322A 20070701-JA 50N322 50N322A GT50N322A GT50N322 ic501

    I1-201-5

    Abstract: GT50N324 50N324 N324 ic501
    Text: GT50N324 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50N324 ○ 電圧共振インバータスイッチング用 ○ 第 6 世代 単位: mm • 高速 FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT50N324 2-16C1C I1-201-5 GT50N324 50N324 N324 ic501

    Untitled

    Abstract: No abstract text available
    Text: GT50NR21 Discrete IGBTs Silicon N-Channel IGBT GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		PDF GT50NR21

    50N322

    Abstract: 50N322A
    Text: GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.10 s typ. (IC = 60 A)


    Original     		PDF GT50N322A 50N322 50N322A

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


    Original     		PDF TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram

    induction cooker circuit diagram

    Abstract: TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker
    Text: 2010-9 SYSTEM CATALOG Home Appliances h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Induction Rice Cookers Refrigerators Air Conditioners Dishwashers Automatic Washing Machines Characteristics of Motor Control Devices . 3


    Original     		PDF SCE0013D induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    TC7600FNG

    Abstract: TMP91FU62 TB6584FNG TB6819 TA2181AFNG TK5A50D 2SK3767 TB6674 fag 23 mg TB6575FNG
    Text: システムカタログ 2009-9 システムカタログ 家電・住設編 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / IH 炊飯ジャー Home Appliances 冷蔵庫 全自動洗濯機 エアコン 食器洗い乾燥機 •CONTENTS


    Original     		PDF TMPM370/TMP19A71 GT30J122 DC1I583 SCJ0013D SCJ0013C TC7600FNG TMP91FU62 TB6584FNG TB6819 TA2181AFNG TK5A50D 2SK3767 TB6674 fag 23 mg TB6575FNG

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    GT30J124

    Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。


    Original     		PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322