Untitled
Abstract: No abstract text available
Text: TO SH IBA TLGC180AP TO SH IBA LED L A M P GaP GREEN LIGHT EM ISSIO N T L G C 1 80AP PANEL CIRCUIT INDICATOR • • • Striking Bright Green All Plastic Mold Type Colorless Clear Lens Low Drive Current, High Intensity Green Light Emission. Recommended Forward Current : 1]? = 15—20mA DC
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TLGC180AP
15--20mA
961001EAA2
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature
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1SS315
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diode SS 3
Abstract: No abstract text available
Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SK2699
diode SS 3
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diode E155
Abstract: mig20j
Text: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.
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MIG20J906E/EA
MIG20J906E,
MIG20J906EA
MIG20J906E
2-108E5A
2-108E6A
o--------Bo40-
80Ilo
961001EAA1
diode E155
mig20j
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)
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2SD2079
2SB1381.
MAX30
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)
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2SC3265
2SA1298
O-236MOD
SC-59CEO
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Untitled
Abstract: No abstract text available
Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)
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HN3C17FU
16GHz
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2917 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2917 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance
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2SK2917
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .
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MG200Q1US51
MG200
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l20pF
Abstract: No abstract text available
Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.
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3SK249
l20pF
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2sk2749
Abstract: No abstract text available
Text: TO SHIBA 2SK2749 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M OSIII 2SK2749 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 15.9MAX.
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2SK2749
2sk2749
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One
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MG90V2YS40
2-94C1A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive
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2SK2744
24mil
20kfl)
10/iS
VDD-40V,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.
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GT30J301
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GT50J102
Abstract: No abstract text available
Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.
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GT50J102
961001EAA
GT50J102
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)
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TPC8103
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Untitled
Abstract: No abstract text available
Text: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)
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GT30J311
30/iS
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2sc5464
Abstract: No abstract text available
Text: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5464
2sc5464
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P channel 50A IGBT
Abstract: No abstract text available
Text: TO SH IBA MIG50J101 H M I G 5 0 J 1 01 H TO SH IBA INTELLIGENT GTR M O D U LE SILICON N CHANNEL IGBT HIGH PO W E R SW ITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • Integrates Inverter & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.
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MIG50J101
2-110A1A
MIG50J101H
P channel 50A IGBT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.
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TLP3540
TLP3540
5X1010
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP3111 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T• I Pm v? 1■ 1■ 1■ MEASUREMENT INSTRUMENTS LOGIC IC TESTERS/MEMORY TESTERS BOARD TESTERS/SCANNERS The TOSHIBA MINI FLAT PHOTO RELAY TLP3111 is a small outline photo relay, suitable for surface m ount assembly.
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TLP3111
TLP3111
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5FW J2C48M ,U 5FW J2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 5FWJ2C48M, U5FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage : V r r m = 30V • Average Output Rectified Current
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J2C48M
5FWJ2C48M,
U5FWJ2C48M
5FWJ2C48M
12-10D1A
12-10D2A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2953 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance
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2SK2953
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)
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TPC8302
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