TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
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Original
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256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
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Untitled
Abstract: No abstract text available
Text: Rev. 0. G M M 7 3 21000B S /B S G -60/70/80 G oldStar 1 ,0 4 8 ,5 7 6 W O R D S x 3 2 B IT G M M 7322000B S /B S G 6 0 /7 0 /8 0 GOLDSTAR ELECTRON CO., LTD. 2 ,0 9 7 ,1 5 2 W O R D S x 3 2 BIT CMOS D YN AM IC RAM M O D U LE Description Features The GM M 7321000BS/BSG is a iM x 3 2 bits dy
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OCR Scan
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21000B
7322000B
7321000BS/BSG
7322000BS/BSG
000DQ
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PDF
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gm71c4400b
Abstract: No abstract text available
Text: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d
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OCR Scan
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GM71C4400B/BL
GMM71C4100BR/BLR
GM71C4400BT/BLT
031MIN
gm71c4400b
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PDF
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gm76c88
Abstract: GoldStar GoldStar gm76c88 CS13 GM76C88-10 GM76C88-70 GM76C88-85 cs1030
Text: GOLDSTAR TECHNO LOG Y INC/ SIE D 402fl757 D 0 D 2 S n 3 PRODUCT SPECIFICATION GM76C88 G o ld S ta r GOLD STAR CO., LTD. 8,192 X 8 BIT STATIC RAM T - H Description Pin Configuration The GM76C88 is 65,536 bit staic random access memory organized as 8,192 words by 8 bits using CMOS
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OCR Scan
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402fl757
GM76C88
GM76C88
70/85/100ns.
192x8
T-90-20
GoldStar
GoldStar gm76c88
CS13
GM76C88-10
GM76C88-70
GM76C88-85
cs1030
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Untitled
Abstract: No abstract text available
Text: 4% G M 23C8100 GoldStar 512Kx 16/IM GOLDSTAR ELECTRON CO., LTD. X 8 BIT CMOS MASK ROM Pin Configuration 42 DIP Top View D escription The GM23C8100 high perform ance read only m em ory is organized either as 1,048,576x8 bit (Byte Mode) or as 524,288 x 16 bit (Word M ode|
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OCR Scan
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23C8100
512Kx
16/IM
GM23C8100
576x8
D8-D14
D15/A-1
GM23C8100
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PDF
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71C4400A
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per
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OCR Scan
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GQ03455
71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
71C4400A
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PDF
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GM71C256-80
Abstract: GM71C256-10
Text: PRODUCT SPECIFICATION GM71C256 256K X 1 BIT CMOS DYNAMIC RAM Pin Configuration Description The GM71C256 is a high speed dynamic RAM or ganized 262,144x1 Bit. The GM71C256 16 Plastic DIP utilizes Goldstar's silicon Gate process technology as well as advanced circuit techniques to provide wide operat
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OCR Scan
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GM71C256
GM71C256
144x1
GM71C256-80
GM71C256-10
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PDF
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Untitled
Abstract: No abstract text available
Text: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS
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OCR Scan
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GM76C8128A/AL/ALL
GM76C8128A/AL/ALL
70/85/100ns.
32-pin
600mil)
402A7S7
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev. 0. GoldStar GMM791000BNS-60/70/80 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000BNS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin
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OCR Scan
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GMM791000BNS-60/70/80
GMM791000BNS
GM71C4400BJ,
71C1000BJ,
GMM791000BNS
067f1
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PDF
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23C4000
Abstract: No abstract text available
Text: GM23C4000 GoldStar 524,288 WORDS x 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration 32 DIP Top View D escription The G M 23C 4000 high-perform ance Read Only M em ory is organized as 524,288 w ords by eight bits and has an access tim e o f 150/200ns. It is
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OCR Scan
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GM23C4000
150/200ns.
23C4000
23C4000
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PDF
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Untitled
Abstract: No abstract text available
Text: GM 23C 8100 GoldStar 5 1 2 K x 1 6 /IM GOLDSTAR ELECTRON CO., LTD. X 8 B IT C M O S M A SK R Ö M Description Pin Configuration The GM23C8100 high performance read only memory is organized either as 1,048,576x8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)
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OCR Scan
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GM23C8100
576x8
100pF-
GM23C8100
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PDF
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Untitled
Abstract: No abstract text available
Text: GM23V8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1Mx 8/512Kx 16BIT CMOS MASK ROM Description Pin Configuration The GM 23V8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM 23V8100A
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OCR Scan
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23V8100A
GM23V8100A
8/512Kx
16BIT
4D267S7
0004G21
402A7S7
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO, LTD. G M M 7 3 2 4 0 0 0 B S /B S G - 6 0 /7 0 /8 0 4,194,304 WORDS x 32 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM7324000BS/BSG is a 4M x32 Bits dy namic RAM MODULE which is assembled 36 pieces of 4Mx 1 bit DRAMs in 20/26 pin SOJ pack
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OCR Scan
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GMM7324000BS/BSG
M7324000BS/BSG
402A757
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PDF
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Untitled
Abstract: No abstract text available
Text: GMM7361000SG/SGS-60/70/80 1,048,576 W O R D S x 36 BIT GMM7362000SG-60/70/80 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 W O R D Sx 36 BIT CM O S DYNA M IC RAM M O DULE Description Features The G M M 7361000SG /SG S is a 1M x 36 b its d y n am ic RAM M O D U LE w hich is assem b led 8
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OCR Scan
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GMM7361000SG/SGS-60/70/80
GMM7362000SG-60/70/80
7361000SG
7362000SG
cito38)
M7361000SG/SGS
7362000SG
GMM7362000SG
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PDF
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Untitled
Abstract: No abstract text available
Text: GoldStar GM23C8000A 1,048,576 WORDS X8BIT CMOS MASK ROM GOLDSTAR ELECTRON CO, LTD. Description The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the
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OCR Scan
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GM23C8000A
GM23C8000A
120/150ns.
120/150ns
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PDF
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GM71C464A-80
Abstract: GM71C464A-10 71C464A
Text: 4 « .V GoldStar GM71C464A 65,536 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO, LTD. Description Features The GM71C464A is the new generation dynamic RAM organized 65,536x4 Bit. GM71C464A has realized higher density, higher performance and various functions by utilizing advanced CMOS
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OCR Scan
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GM71C464A
GM71C464A
536x4
GM71C464A-80
GM71C464A-10
71C464A
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PDF
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D75323
Abstract: No abstract text available
Text: G o ld S ta r GD75232/GD75323 EIA RS-232-D INTERFACE 1 CHIP IC GOLDSTAR ELECTRON CO., LTD. Block Diagram D escription The G D 75232 is a monolithic device contain ing 3 independent drivers and 5 receivers, and the G D 75323 is a monolithic device containing 5 in
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OCR Scan
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GD75232/GD75323
RS-232-D
RS-232-D.
-232-D
RS-232-C)
1N3064
20KHz,
GD75232
0004Stitj
D75323
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PDF
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71C4400Bj
Abstract: No abstract text available
Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin
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OCR Scan
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GMM781000BN
S-60/70/80
781000BN
71C4400BJ,
4400BJ
0003fl2fl
GMM781000BNS
M0267S7
71C4400Bj
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PDF
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GD4008B
Abstract: TH501 GD40 GoldStar T-H5-01 4008b
Text: GOLDSTAR TECHNOLOGY INC-. 4 0 2 8 7 5 7 GOLDSTAR TECHNOLOGY INC. D4E D | 04E M02Û7S7 DDDlbSG =i J / 01620 D T-H5-01 GD4008B 4-BIT BINARY FULL ADDER DESCRIPTION — The 4008B ii a 4-Bit Binary Full Adder with two 4-blt Data inputs AQ-A 3 , BQ-Bg ; a Carry Input (Cq), four Sum Outputs (Sq'Sq) and a Carry Output (C 4 ).
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OCR Scan
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T-H5-01
GD4008B
4008B
4008B
GD4008B
TH501
GD40
GoldStar
T-H5-01
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PDF
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74C163
Abstract: 74C160 D4016 D4016-2
Text: GOLDSTAR TECHNOLOGY INC-. D4E D | 41350757 G D D n S f l 2 4028 7 57 G O L D S T A R TECHN O L O G Y INC. 04E 01958 D T ‘ L I5 -2 3 -O S G D 4 0 1 6 0 B /4 0 1 6 1 B • G D 4 0 1 6 2 B /4 0 1 6 3 B 4 -B IT SYN C H R O N O U S CO UNTER S DESCRIPTION — The 40160B and the 40162B are fu lly synchronous edge-triggered 4-B it Decade
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OCR Scan
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40160B
40162B
40161B
40163B
40160B/40161B
74C163
74C160
D4016
D4016-2
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PDF
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gd4023b
Abstract: No abstract text available
Text: GOLDSTAR 4028757 GOLDSTAR T E C HN O L OG Y TECHNOLOGY I N C -, GME D I 04E INC. MÜ2Ö7S7 G 0 G l b S 2 01652 T-V^-Z/ GD4023B TRIPLE 3-INPUT NAND GATE D E S C R IP T IO N — This C M O S logic element provides a 3-input positive N A N D function. The outputs are fully buffered for highest noisa
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OCR Scan
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GD4023B
gd4023b
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PDF
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dps 298 cp 2
Abstract: ic xc 7270 xc 7270 dps 298 cp dps 298 cp 4 dps 298 PHL 218 dps 298 cp 9
Text: ^ ^'^£xjìtÌÈtÈÌÌÈÌÙttmtÈÈÌÈB6àtitilitéimiln^ÈàiÙÈtmii61' f r VriiiVHTi iffglr^-irTl* ïr/'ïiir InitfrifcrfW’ Tffr i tTiiWl GOLDSTAR TECHNOLOGY 4028757 GOLDSTAR TECHNOLOGY INC. INC-. DME Î T | L»D2fl7S7~ü00:iia7S =1 | 04E 0 1 8 7 5
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OCR Scan
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tmii61'
GD4707B/GD4707BX
4707B/4707BX
dps 298 cp 2
ic xc 7270
xc 7270
dps 298 cp
dps 298 cp 4
dps 298
PHL 218
dps 298 cp 9
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PDF
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GD4539B
Abstract: gd4539
Text: GOLDSTAR 1028757 GOLDSTAR TECHNOLOGY TECHNOLOGY INC. INC 04E 01804 D T-67-I/-5/ GD4539B DUAL 4-INPUT MULTIPLEXER DESCRIPTION — The 4539B is a Dual 4-Input Digital M ultiplexer w ith common select logic. Each m ultiplexer has fo u r M ultiplexer Inputs U o-lg , an active LOW Enable In p u t E) and a M ultiplexer
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OCR Scan
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T-67-I/-5/
GD4539B
4539B
GD4539B
gd4539
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PDF
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72ZZZZ
Abstract: GM71C4256A-80 GM71C4256A80
Text: GOLDSTAR TECHNOLOGY 4?E D INC/ 402f l ? S 7 O a O B h n • 1 I PRODUCT SPECIFICATION REV. 1 GM71C4256A GoldStar 262,144 WORDS X 4 BIT CM O S DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin C onfiguration The GM71C4256A is the new generation dynamic
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OCR Scan
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GM71C4256A
GM71C4256A
GM7lC4256Ato
0003t
72ZZZZ
GM71C4256A-80
GM71C4256A80
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PDF
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