Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7402010CS/SG is an 1M x 40 bits D y n am ic RA M M O D U LE w h ich is assembled 20 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7402010CS/SG is
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GMM7402010CS/SG
GMM7402010CS/SG
GMM74020IOCS
GMM7402010CSG
11111111111111111111111111111111111ir
072bS
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gm71c4400b
Abstract: No abstract text available
Text: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d
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GM71C4400B/BL
GMM71C4100BR/BLR
GM71C4400BT/BLT
031MIN
gm71c4400b
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ic ns 4263
Abstract: No abstract text available
Text: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various
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GM71C4263C
GM71CS4263CL
GM71C
4263C/CL
GM71C
0D07bStl
ic ns 4263
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71C4400A
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per
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GQ03455
71C4400A/AL
GM71C4400A/AL
300-mil
20-pin
400-mil
71C4400A
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Untitled
Abstract: No abstract text available
Text: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS
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GM76C8128A/AL/ALL
GM76C8128A/AL/ALL
70/85/100ns.
32-pin
600mil)
402A7S7
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Untitled
Abstract: No abstract text available
Text: GM23V8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1Mx 8/512Kx 16BIT CMOS MASK ROM Description Pin Configuration The GM 23V8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM 23V8100A
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23V8100A
GM23V8100A
8/512Kx
16BIT
4D267S7
0004G21
402A7S7
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GDD7235
Abstract: ov 724b 0D07B
Text: LG Semicon. Co. LTD Description Features The GMM7402000ES/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of lM x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g
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GMM7402000ES/SG
7402000ES/SG
GMM7402000ES/SG
GMM7402000ES
GMM7402000ESG
Sup50
1111I
R62C1
GDD7235
ov 724b
0D07B
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Untitled
Abstract: No abstract text available
Text: LG Semicon. Co. LTD. Description Features The GMM7408200AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408200AS/SG is optimized for
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GMM7408200AS/SG
GMM7408200AS
GMM7408200ASG
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Untitled
Abstract: No abstract text available
Text: @ LG Semlcon. Co., LTD. Description Features The GMM7362000CS/SG is a 2M x 36 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board with decoupling capacitors. The
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GMM7362000CS/SG
7362000C
GMM7362000CS/SG
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346h
Abstract: 34DH gm82c gm82c700 i80x86 GM82 82c700
Text: @ LG Semicon. Co. LTD. GM 82C700 FAST SCSI-2 HOST ADAPTER CHAPTER 1. OVERVIEW This section describes abstracted information of the GM82C700. 1.1 GENERAL DESCRIPTION The GM82C700 is a single chip SCSI host adap ter that is applied to peripheral devices controlled
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82C700
GM82C700.
GM82C700
80-pin
68-pin
402A757
346h
34DH
gm82c
i80x86
GM82
82c700
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K250 capacitor
Abstract: DNR2
Text: @ LG Semicon. Co. LTD. Features Description The GMM7322010ES/SG is a 2M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The G M M 7322010ES/SG is
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GMM7322010ES/SG
7322010ES/SG
GMM7322010ES/SG
GMM7322010ES
GMM7322010ESG
D0Qb40^
K250 capacitor
DNR2
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40267
Abstract: GM71C18163AJ-6 os 910 Edd 44 GM71 GM71C GM71C18163AJ-7 GM71C18163AJ-8 gm71c18163
Text: @ LG Semicon. Co. LTD Description Features The GM71C S 18163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71C(S)18163B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The
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18163B/BL
GM71C
42pin
400mil
40267
GM71C18163AJ-6
os 910
Edd 44
GM71
GM71C18163AJ-7
GM71C18163AJ-8
gm71c18163
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GM71C4256B
Abstract: MQ5A
Text: @ LG Semicon. Co. LTD._ Description Features The GM71C4256B/BL is the new generation dynamic RAM organized 262,144 x 4 bit. GM71C4256B/BL has realized higher density, higher performance and various functions fay utilizing advanced CMOS process technology.
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GM71C4256B/BL
00DS304
MQ5A757
000530b
GM71C4256B
MQ5A
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GM71C464A
Abstract: No abstract text available
Text: G M 53C 261 GoldStar GOLDSTAR ELECTRON CO, LTD. 65,536 WORDS x 4 BIT CMOS MULTIPORT VIDEO RAM D escription Features The GM53C261 is a high speed 65,536 x 4 bit mul tiport CMOS dynamic memory. The two ports, random access and serial access, are configured
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256x4
GM53C261-12
alone-50
alone-35
together-85
402A7S7
T-90-20
GM71C464A
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Untitled
Abstract: No abstract text available
Text: GD54/74LS123 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORS WITH CLEAR Feature Pin Configuration • • D-C Triggered from active-hign or active-low gated logic inputs Retriggerable for very long output pulses, up to 100% duty cycle • Overriding clear terminates output pulse
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GD54/74LS123
10OOpF,
402A7S7
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82c765B
Abstract: WD37C65
Text: GM82C765B FLOPPY DISK SUBSYSTEM CONTROLLER General Description Features The GM82C765B is a CMOS LSI device which interfaces a host microprocessor to the floppy disk drive. It integrates the function of the Formatter/Controller, Data Separator, Write Precompensation, Data rate selection, Clock Generation, High
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GM82C765B
GM82C765B
12MHz,
GM82C7658
82c765B
WD37C65
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Untitled
Abstract: No abstract text available
Text: GM71V17803C GM71VS17803CL LG Semicon Co.,Ltd. 2,097,152 WORDS x 8RAM BIT CMOS DYNAMIC Description Features The GM71V S 17803C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17803C/CL has realized higher density, higher performance and various
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GM71V17803C
GM71VS17803CL
GM71V
17803C/CL
28pin
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Untitled
Abstract: No abstract text available
Text: G M 82C 650 GoldStar GOLDSTAR ELECTRON CO ,LTD GoldStar Sound Generator 1. G eneral Description The GM82C650 is a high performance digital sound generator, which is applicable for many musical applications like PC sound card, sound module, karaoke, keyboard,and
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GM82C650
20bits
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76c88
Abstract: GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88
Text: 1» LG Semicon. Co. LTD. Description Fin Configuration The GM76C88AL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology and operated from a single 5V supply. Advanced circuit techniques provide low power feature with a maximum operating current of
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GM76C88AL
120/150ns
BBB0BB00RB0BBB
000b074
76c88
GM76C88AL-15
GM76C88AL-12
GM76C88
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7402010CS/SG is an 1M x 40 bits D y n am ic RA M M O D U LE w h ich is assembled 20 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7402010CS/SG is
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GMM7402010CS/SG
GMM7402010CS/SG
GMM74020IOCS
GMM7402010CSG
Capabili95)
11111111111111111111111111111111111ir
072bS
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L7909
Abstract: L7905 voltage regulator L7915 pin configuration L7905 L7905 l7912 l7912 voltage regulator regulator L7915
Text: GL79XX Series NEGATIVE VOLTAGE REGULATOR Description Pin Configuration The G L 7 9 X X series of fixed output negative voltage Top View regulators are intended as com plem ents to the popular G L 7 8 X X series d evices. Available in fixed output voltage options from - 5 to —2 4 Volts, these
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GL79XX
402A7S7
L7909
L7905 voltage regulator
L7915
pin configuration L7905
L7905
l7912
l7912 voltage regulator
regulator L7915
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KKZ 09
Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
Text: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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GM71V
6163A/AL
42pin
400mil
KKZ 09
kkz 12 28 pin
kkz 12 27 pin
405A757
kkz 12
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7401010ES/SG is an lM x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 10 pieces o f 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The G M M 7401010ES/SG is
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GMM7401010ES/SG
7401010ES/SG
GMM7401010ES/SG
GMM740101OES
GMM740101OESG
1111111111111111111111111ii
1111im
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GMM7322100B
Abstract: GMM7322100BSG
Text: @ LG Semicon. Co. LTD Description Features The GMM7322100BS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322100BS/SG is optimized for
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GMM7322100BS/SG
GMM7322100BS/SG
GMM7322100BS
GMM7322100BSG
111II111111111111111111111111111111
11111111111111111111111111111111III
GMM7322100B
GMM7322100BSG
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