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    gm71c4400b

    Abstract: No abstract text available
    Text: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d


    OCR Scan     		PDF GM71C4400B/BL GMM71C4100BR/BLR GM71C4400BT/BLT 031MIN gm71c4400b

    Untitled

    Abstract: No abstract text available
    Text: Rev. 0. GoldStar GMM791000BNS-60/70/80 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000BNS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin


    OCR Scan     		PDF GMM791000BNS-60/70/80 GMM791000BNS GM71C4400BJ, 71C1000BJ, GMM791000BNS 067f1

    GM71C4400B

    Abstract: GM71C4400BJ GM71C4400 GM71C4100C GM71C4100 GM71C44 gm71c4400bz
    Text: @ LG Semicon. Co. LTD. Description Features The GM71C4400B/BL is the new generation dynamic RAM organized 1,048,576 x 4 bit. GM71C4400B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The


    OCR Scan     		PDF GM71C4400B/BL 300mil 20pin 400mil GM71C4400B GM71C4400BJ GM71C4400 GM71C4100C GM71C4100 GM71C44 gm71c4400bz

    ras 0515

    Abstract: BNS-60
    Text: LG Semicon. Co. LTD. Description Features The GMM781000BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781000BNS is a socket type memory module, suitable for easy change or addition


    OCR Scan     		PDF GMM781000BNS GM71C4400BJ, GMM781000BNS GM71C4400B GMM781000BNS-60 GMM781000BNS-70 GMM781000BNS-80 0DD74Q5 ras 0515 BNS-60

    GM71C4400B

    Abstract: GM71C4400 gm71c4400bz CM71C4400
    Text: GM71C4400B/BL LG Semicon Co.,Ltd. 1,048,576 W O R D S x 4B IT C M O S D Y N A M IC R A M Description Features T he G M 7 1C 4400B /B L is the new generation dynam ic R A M organized 1,048,576 x 4 bit. G M 71C 4400B /B L has realized higher density, higher


    OCR Scan     		PDF GM71C4400B/BL 4400B 20pin GM71C4400B GM71C4400 gm71c4400bz CM71C4400

    GM71C4400BJ

    Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
    Text: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a


    OCR Scan     		PDF GMM791000BNS GM71C4400BJ, GM71C1000BJ, GMM791000BNS GM71C4400BJ GM71C4400 GM71C1000 GM71C4 GMM791000

    GMM791100BNS70

    Abstract: ras 0515 irp 540
    Text: @ LG Semicon. Co. LTD. Description Features The GMM791100BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and lM xl DRAM in 20 pin SOJ package. The GMM791100BNS is a socket type memory


    OCR Scan     		PDF GMM791100BNS GM71C4400BJ, GMM791100BNS-60 GMM791100BNS-70 GMM791100BNS70 ras 0515 irp 540

    GM71C4400BJ

    Abstract: GM71C4400 gm71c4400b
    Text: @ LG Semicon. Co. LTD Description Features The GMM781100BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781100BNS is a socket type memory module, suitable for easy change or addition


    OCR Scan     		PDF GMM781100BNS GM71C4400BJ, GMM781100BNS GM71C4400B GMM7811OOBNS-60 GMM781100BNS-70 GMM781100BNS-80 88888888fo GM71C4400BJ GM71C4400

    Untitled

    Abstract: No abstract text available
    Text: Rev. 0. G M M 7 3 21000B S /B S G -60/70/80 G oldStar 1 ,0 4 8 ,5 7 6 W O R D S x 3 2 B IT G M M 7322000B S /B S G 6 0 /7 0 /8 0 GOLDSTAR ELECTRON CO., LTD. 2 ,0 9 7 ,1 5 2 W O R D S x 3 2 BIT CMOS D YN AM IC RAM M O D U LE Description Features The GM M 7321000BS/BSG is a iM x 3 2 bits dy­


    OCR Scan     		PDF 21000B 7322000B 7321000BS/BSG 7322000BS/BSG 000DQ

    71C4400Bj

    Abstract: No abstract text available
    Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin


    OCR Scan     		PDF GMM781000BN S-60/70/80 781000BN 71C4400BJ, 4400BJ 0003fl2fl GMM781000BNS M0267S7 71C4400Bj

    GM71C18160AJ7

    Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
    Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I


    OCR Scan     		PDF GM71C1000B-60 GM71C 1OO0BJ-60 1000BZ-60 100OBL-6O 1000BLJ-60 GM71C1000BLZ-60 GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15

    Untitled

    Abstract: No abstract text available
    Text: GMM781100BNS-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 781100B N S is an 1M x 8 bits D ynam ic R A M M odule w hich is assem bled 2 • H igh D ensity Standard 30 pin m ounting 2 pcs o f 4 M D R A M G M 71C 4400B J SO J


    OCR Scan     		PDF GMM781100BNS-60/70/80 781100B 4400B Cyc81100BNS GMM781100BNS

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8

    GM76C256all

    Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
    Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60


    OCR Scan     		PDF GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410

    Untitled

    Abstract: No abstract text available
    Text: Rev 0. GMM7361000BS/BSG-60/70/80 GMM7361000BSS/BSGS-60/70/80 GoldStar 1,048,576 WORDS x 36 BIT GOLDSTAR ELECTRON CO., LTD. GMM7362000BS/BSG-60/70/80 2,097,152 WORDS x 36 BIT/CMOS DYNAMIC RAM MODULE Description Features The GMM7361000BSG/BSGS is a 1M x 36 bits dy­


    OCR Scan     		PDF GMM7361000BS/BSG-60/70/80 GMM7361000BSS/BSGS-60/70/80 GMM7362000BS/BSG-60/70/80 GMM7361000BSG/BSGS GMM7362000BS/BSG 1IV13Q- JliJULNJL1111111 IJ11IUI11IL!

    GMM791000BNS70

    Abstract: GMM791000BNS-70 GMM791000 791000BNS-60
    Text: GMM791000BNS-60/70/80 LG S e m ic o n C o .,L td . Description Features The G M M 791000B N S is an 1M x 9 bits D ynam ic R A M M odule w hich is assem bled 2 pieces o f 4M bit D R A M G M 71C 4400B J, 1M x 4 sealed in 20 pin S O J package and 1M bit D R A M (G M 71C 1000B J, I M x l) in 20 pm


    OCR Scan     		PDF GMM791000BNS-60/70/80 791000B 4400B 1000B GMM791000BNS GMM791000BNS GMM791000BNS70 GMM791000BNS-70 GMM791000 791000BNS-60

    71C4400

    Abstract: GMM791100BNS70 71C4400Bj
    Text: » G M M 791 lOOBNS-60/70/80 1,048,570 w o r d s x 9 b i t LG Semicon Co.,Ltd. CMOS DYNAMIC RAM MODULE Features Description The GM M 791100BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM G M 71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit


    OCR Scan     		PDF lOOBNS-60/70/80 791100BNS 71C4400BJ, GMM7911OOBNS GMM791100BNS GMM7911OOBNS 71C4400 GMM791100BNS70 71C4400Bj

    GMM781000BNS

    Abstract: 71C4400B 7IC4400BJ BNS-70
    Text: GMM781000BNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Features 1 H igh D ensity Standard 30 pin m ounting 2 pcs o f 4M D R A M G M 7 1C 4400B J SO J T he G M M 781000B N S is an 1M x 8 bits D ynam ic R A M M odule w hich is assem bled 2


    OCR Scan     		PDF GMM781000BNS 4400B 781000B GMM781000BNS-60/70/80 GMM781000BNS 71C4400B 7IC4400BJ BNS-70

    GM71C4400BJ70

    Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
    Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80


    OCR Scan     		PDF 71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80 71C1000BL-80 1000B I000H GM71C1000B-60 GM71C4400BJ70 GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256