Untitled
Abstract: No abstract text available
Text: GM23V8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1Mx 8/512Kx 16BIT CMOS MASK ROM Description Pin Configuration The GM 23V8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM 23V8100A
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23V8100A
GM23V8100A
8/512Kx
16BIT
4D267S7
0004G21
402A7S7
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72ZZZZ
Abstract: GM71C4256A-80 GM71C4256A80
Text: GOLDSTAR TECHNOLOGY 4?E D INC/ 402f l ? S 7 O a O B h n • 1 I PRODUCT SPECIFICATION REV. 1 GM71C4256A GoldStar 262,144 WORDS X 4 BIT CM O S DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin C onfiguration The GM71C4256A is the new generation dynamic
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GM71C4256A
GM71C4256A
GM7lC4256Ato
0003t
72ZZZZ
GM71C4256A-80
GM71C4256A80
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GM71C17403b
Abstract: GM71C17403BJ GM71C17403
Text: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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GM71C17403B/BL
300mil
GM71C17403b
GM71C17403BJ
GM71C17403
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KKZ 09
Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
Text: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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GM71V
6163A/AL
42pin
400mil
KKZ 09
kkz 12 28 pin
kkz 12 27 pin
405A757
kkz 12
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7322010DS/SG is a 2M x 32 bits D y n am ic RA M M O D U LE w h ic h is assembled 16 pieces of 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322010DS/SG is
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GMM7322010DS/SG
GMM7322010DS/SG
GMM7322010DS
GMM7322010DSG
Sin125
11111111111111111111111111111111i
M02A757
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GM71C18160AJ7
Abstract: S1160 GM71C18160aj GM71C18160A-8 GM71C18160AJ6 GM71C18160A GM71C18160AT7 GM71C18160AJ-6 GM71C18160AJ8
Text: @ LG Semicon. Co. LTD. Description Features The GM71C18160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C18160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
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GM71C18160A
4D2A757
GM71C18160AJ7
S1160
GM71C18160aj
GM71C18160A-8
GM71C18160AJ6
GM71C18160AT7
GM71C18160AJ-6
GM71C18160AJ8
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7402000CS/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g
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GMM7402000CS/SG
7402000CS/SG
GMM7402000CS/SG
GMM7402000CS
GMM7402000CSG
0D7217
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gm71v4403
Abstract: MQ2A
Text: @ LG Semicon. Co. LTD. Description Features • 1,048,576 Words x 4 Bit Organization • Extended Data Out Mode Capability • Single Power Supply 3.3V + 0.3V • Fast Access Time & Cycle Time The G M 71V 4403E/EL is the new g en eratio n dynamic RAM organized 1,048,576 words x 4 bit.
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GM71V4403E/EL-60
GM71V4403E/EL-70
GM71V4403E/EL-80
4403E/EL
GM71V4403E/EL
300mil
20pin4026757
4D267S7
gm71v4403
MQ2A
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goldstar gm16c450
Abstract: goldstar GM16c550 gm16c450 GOLDSTAR GD75188 GM16C550 GD75188 GOLDSTAR marking
Text: _ . IC . GM16C550 c i 0 ic r c > c c ir a s y n c h r o n o u s c o m m u n ic a tio n s ELEMENT WITH FIFOs GOLDSTAR e l e c t r o n CO., l t d . Descriptions Features The G M 16 C 5 50 is an asynchronous communi cations element A C E that is functionally
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GM16C550
GM16C550is
GM16C450,
16byte
GM16C450.
RS-232-C/D
goldstar gm16c450
goldstar GM16c550
gm16c450
GOLDSTAR GD75188
GD75188
GOLDSTAR marking
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