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    K4S511632D

    Abstract: No abstract text available
    Text: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S511632D 512Mbit 16bit K4S511632D

    Untitled

    Abstract: No abstract text available
    Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit DDR SDRAM 8M x 16bit x 4 Banks DDR SDRAM Specification Revision 1.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF 512Mb 512Mbit 16bit 31/VREF-0

    MD4832-D512-V3Q18-X-P

    Abstract: md4832d512v3q MD4811-D512-V3Q18-X dragonball mx1 Diskonchip QUALCOMM Reference manual AD12 AD14 PR31700 MD4331-d1G-V3Q18-X-P
    Text: Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk with MLC NAND and M-Systems’ x2 Technology Preliminary Data Sheet, June 2003 Highlights Mobile DiskOnChip G3 is one of the industry’s most efficient storage solutions, using Toshiba’s 0.13 µm Multi-Level Cell MLC


    Original     		PDF 512Mbit/1Gbit 91-SR-011-05-8L MD4832-D512-V3Q18-X-P md4832d512v3q MD4811-D512-V3Q18-X dragonball mx1 Diskonchip QUALCOMM Reference manual AD12 AD14 PR31700 MD4331-d1G-V3Q18-X-P

    OTB-400-1

    Abstract: No abstract text available
    Text: MEMORY MODULE SDRam 64Mx48-SOP 3DSD2G64VB4488 Synchronous Dynamic Ram MODULE 2Gbit SDRAM organized as 32Mx64, based on 32Mx16 Pin Assignment Top View BGA 119 (8x15 - Pitch : 1.27mm) Features - Stack of four 512Mbit SDRam. - Organized as 32Mx64bit. - Single +3.3V power supply.


    Original     		PDF 64Mx48-SOP 3DSD2G64VB4488 32Mx64, 32Mx16 512Mbit 32Mx64bit. 3DFP-0488-REV OTB-400-1

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE SDRAM 32Mx64-BGA DATA SHEET SYNCHRONOUS DRAM MODULE 3DSD2G64VB4383 2-Gbit SDRAM organized as 32Mx64, based on 32Mx16 Features - Stack of four 512Mbit SDRAM. - Organized as 32Mx64bit. - High frequency: 133Mhz - Single +3.3V power supply. - Fully synchronous; all signals registered on


    Original     		PDF 32Mx64-BGA 3DSD2G64VB4383 32Mx64, 32Mx16 512Mbit 32Mx64bit. 133Mhz 3DDS-0383-2

    3DSD2G16VS4364

    Abstract: 3D-PLUS
    Text: MEMORY MODULE SDRAM 128Mx16-SOP 3D SD2G16VS4364 Synchronous Dynamic Ram MODULE 2Gbit SDRAM organized as 2128Mx16, based on 128Mx4 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Stack of four 512Mbit SDRam. - Organized as 128Mx16-bit. - Single +3.3 power supply.


    Original     		PDF 128Mx16-SOP SD2G16VS4364 2128Mx16, 128Mx4 512Mbit 128Mx16-bit. 3DSD2G16VS4364 3DFP-0364-REV 3DSD2G16VS4364 3D-PLUS

    k4h510838d

    Abstract: No abstract text available
    Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit SDRAM 32M x 16bit x 4 Banks DDR SDRAM Specification Revision 0.0 Apr. 2002 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as


    Original     		PDF 512Mb 512Mbit 16bit 31/VREF-0 k4h510838d

    HYB25L512160AC

    Abstract: HYE25L512160AC
    Text: Data Sheet, Rev. 1.3, April 2004 HYB25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-04


    Original     		PDF HYB25L512160AC 512MBit 10212003-BSPE-77OL P-TFBGA-54-2 MO207G FBGA-54 HYE25L512160AC

    timing controller SHART

    Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
    Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF K4U52324QE 512Mbit 32Bit 136Ball timing controller SHART T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4

    Untitled

    Abstract: No abstract text available
    Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S510832B 512Mbit

    Untitled

    Abstract: No abstract text available
    Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC 512Mbit

    HY27USXX121M

    Abstract: package tsop1 512MBIT hynix nand HY27US HY27 HY27SSXX121M
    Text: HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary 0.1 Renewal Product Group


    Original     		PDF HY27SS HY27US 512Mbit 64Mx8bit 32Mx16bit) 512Mb HY27USXX121M package tsop1 512MBIT hynix nand HY27 HY27SSXX121M

    AS4C32M16S-7AI

    Abstract: TSOP 54 II
    Text: Datasheet | Rev. 1.1 | 2012 512Mbit Single-Data-Rate SDR SDRAM AS4C64M8S-7TCN 64Mx8 (16M x 8 x 4 Banks) AS4C32M16S-7TCN 32Mx16 (8M x 16 x 4 Banks) Datasheet Version 1. 1 1 512 Mbit SDRAM AS4C[08/16] Revision History R Rev. 1.1 April 2012 Revised Operating-; Standby- and Refresh Currents


    Original     		PDF 512Mbit AS4C64M8S-7TCN 64Mx8 AS4C32M16S-7TCN 32Mx16 AS4C32M16S-7AI TSOP 54 II

    Untitled

    Abstract: No abstract text available
    Text: M65KC512AB 512Mbit 4 Banks x 4M x 32 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Preliminary Data Features summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 4MWords, each 32 bits wide ■ Supply Voltage – VDD = 1.7 to 1.9V (1.8V typical in


    Original     		PDF M65KC512AB 512Mbit 133MHz 512Mbit 133MHz

    Untitled

    Abstract: No abstract text available
    Text: FPGA Configurator FC512 Interconnect Systems, Inc. www.isipkg.com DATA SHEET FEATURES DESCRIPTION • Ultra-Compact Configuration Solution  512Mbit Flash + Controller  Supports up to 32-bit wide Fast Passive Parallel FPP configuration bus The FC512 is a single device configuration solution that


    Original     		PDF FC512 512Mbit 32-bit FC512 512Mbits 216-ball, 100ms 13x13mm 216-ball

    Untitled

    Abstract: No abstract text available
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 11Preliminary 512Mbit 32bits 200us

    LA2 DT2

    Abstract: BGA64 TC59LM906AMG TC59LM914AMG P-BGA64-1317-1
    Text: TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_18 / HSTL_Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle


    Original     		PDF TC59LM914/06AMG-37 512Mbits 304-WORDS 16-BITS 608-WORDS TC59LM914/06AMG TC59LM914AMG TC59LM906AMG LA2 DT2 BGA64 P-BGA64-1317-1

    Untitled

    Abstract: No abstract text available
    Text: M65KG512AB 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR Low Power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332Mbit/s max. for 6ns speed


    Original     		PDF M65KG512AB 512Mbit 512Mbit 332Mbit/s 133MHz 166MHz

    gddr5

    Abstract: K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36
    Text: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N51163QC-ZC 512Mbit gddr5 K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36

    25l512

    Abstract: 25L5121 HYB25L512160AC HYE25L512160AC 25l51216
    Text: D a t a S he et , R e v . 1 . 2 , F e b . 2 00 4 HYB25L512160AC–7.5 HYE25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e E x t en d e d T e m p e r a t u r e R a n g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g .


    Original     		PDF HYB25L512160AC HYE25L512160AC 512MBit 10212003-BSPE-77OL 25L512160AC P-TFBGA-54-2 MO207G FBGA-54 25l512 25L5121 25l51216

    BGA64

    Abstract: TC59LM905AMB TC59LM913AMB
    Text: TC59LM913/05AMB-50,-55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_2 Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network


    Original     		PDF TC59LM913/05AMB-50 512Mbits 304-WORDS 16-BITS 608-WORDS TC59LM913/05AMB TC59LM913AMB TC59LM905AMB BGA64

    H55S5132DFR

    Abstract: H55S5122 h55s512 RA13 mobile MOTHERBOARD CIRCUIT diagram H55S5122DFR
    Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512MBit 16Mx32bit) 512Mbit H55S5122DFR H55S5132DFR 32bits 200us H55S5122 h55s512 RA13 mobile MOTHERBOARD CIRCUIT diagram

    H5MS5162

    Abstract: H5MS5162DFR h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400
    Text: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Specification of 512Mb 32Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512Mbit 512Mb 32Mx16bit) 512Mbit 16bit) H5MS5162DFR 16bits) H5MS5162 h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400

    hy5rs123235b

    Abstract: HY5RS123235BFP HY5RS123235
    Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS123235BFP 512Mbit 16Mx32) HY5RS123235BFP hy5rs123235b HY5RS123235