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onsemi NGTG20N60L2TF1G IGBT 600V 40A 64W TO-3PF
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DigiKey	NGTG20N60L2TF1G	Tube	107		1	1 $3.03 10 $3.03 100 $1.768 1000 $1.768 10000 $1.768	Buy Now
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Wuhan P&S	NGTG20N60L2TF1G		30		1	1 $2.06 10 $2.06 100 $1.54 1000 $1.24 10000 $1.24	Buy Now
onsemi HGTG20N60B3 IGBT 600V 40A 165W TO247
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Avnet Americas	HGTG20N60B3	Tube		0 Weeks, 2 Days	233	1 - 10 - 100 - 1000 $3.1104 10000 $2.7835	Buy Now
Rochester Electronics	HGTG20N60B3		11,700		1	1 $3.45 10 $3.45 100 $3.24 1000 $2.93 10000 $2.93	Buy Now
Avnet Silica	HGTG20N60B3			53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	HGTG20N60B3		2,700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics HGTG20N60B3 IGBT 600V 40A TO247-3
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DigiKey	HGTG20N60B3	Tube			200	1 - 10 - 100 - 1000 $2.87 10000 $2.87	Buy Now
Rochester Electronics LLC HGTG20N60B3 N-CHANNEL IGBT
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DigiKey	HGTG20N60B3	Tube			84	1 - 10 - 100 $3.59 1000 $3.59 10000 $3.59	Buy Now
onsemi HGTG20N60A4 IGBT 600V 70A TO247-3
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G20N60 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
G20N60B3D		Fairchild Semiconductor	40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode		Original	PDF
G20N60C3		Fairchild Semiconductor	45A, 600V, UFS Series N-Channel IGBT		Original	PDF

G20N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXGH20N60AU1 Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1 Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient	Original	N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1	PDF
Untitled Abstract: No abstract text available Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB20N60 P-TO-263-3-2 O-263AB) G20N60	PDF
g20n60hs Abstract: G20N60 RY 227 Tf 227 10A SGP20N60HS 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3 G20N60HS g20n60hs G20N60 RY 227 Tf 227 10A SGP20N60HS 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS	PDF
g20n60 Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a	PDF
G20N60 Abstract: G20N60 IGBT Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP20N60 SGW20N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW20N60 G20N60 G20N60 IGBT	PDF
g20n60 Abstract: G20N60 IGBT Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB20N60 SGB20N60 g20n60 G20N60 IGBT	PDF
G20N60B3D Abstract: G20N60B hg*20n60 Hgtg20n60 Text: G20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and	Original	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60	PDF
G20N60 Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247 Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48	Original	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247	PDF
g20n60 Abstract: igbt 400V 20A PG-TO-263-3-2 SGB20N60 Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB20N60 PG-TO-263-3-2 O-263AB) G20N60 g20n60 igbt 400V 20A PG-TO-263-3-2 SGB20N60	PDF
HG20N60B3 Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a	Original	HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. TA49050. 1-800-4-HARRIS HG20N60B3 hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B	PDF
G20N60B3 Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60 Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC	Original	HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 G20N60 G20N60B LD26 RHRP3060 hg*20n60	PDF
G20N60B3D Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH Text: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated	Original	HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. RHRP3060 1-800-4-HARRIS G20N60B3D BVces LD26 igbt 600V 45UH	PDF
g20n60c3d Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3 Text: G20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input	Original	HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) g20n60c3d g20n60c3d equivalent LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3	PDF
G20N60B3 Abstract: MOSFET 40A 600V HGTG20N60B3 HGTP20N60B3 LD26 RHRP3060 TA49050 Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs January 1997 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150oC	Original	HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 MOSFET 40A 600V LD26 RHRP3060 TA49050	PDF

G20N60 Abstract: G20N60 IGBT Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP20N60 SGW20N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW20N60 G20N60 G20N60 IGBT	PDF
Untitled Abstract: No abstract text available Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3-21 G20N60HS PG-TO-220-3-1	PDF
G20N60 Abstract: No abstract text available Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP20N60 SGW20N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW20N60 G20N60	PDF
g20n60 Abstract: G20N60 IGBT Text: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB20N60 P-TO-263-3-2 O-263AB) SGB20N60 g20n60 G20N60 IGBT	PDF
g20n60hs Abstract: G20N60 SGP20N60HS Diode 400V 20A 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3 G20N60HS SGW20N60nces. g20n60hs G20N60 SGP20N60HS Diode 400V 20A 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS	PDF
Untitled Abstract: No abstract text available Text: HGT1S20N60C3S9A Data Sheet August 2003 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGT1S20N60C3S9A 150oC. TA49178.	PDF
931 diode smd Abstract: g20n60 Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient	OCR Scan	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60	PDF
HG20N60B3 Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B Text: interrii HGT1S20N60B3S, HGTP20N60B3, G20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs	OCR Scan	HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B	PDF
relay 12v 1c/o Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3 Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	OCR Scan	TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178	PDF
G20N60B3D Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n Text: G20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input	OCR Scan	HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n	PDF

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G20N60 Price and Stock

onsemi NGTG20N60L2TF1G

onsemi HGTG20N60B3

Flip Electronics HGTG20N60B3

Rochester Electronics LLC HGTG20N60B3

onsemi HGTG20N60A4

G20N60 Datasheets (2)

G20N60 Datasheets Context Search

IXGH20N60AU1

Untitled

g20n60hs

g20n60

G20N60

g20n60

G20N60B3D

G20N60

g20n60

HG20N60B3

G20N60B3

G20N60B3D

g20n60c3d

G20N60B3

G20N60

Untitled

G20N60

g20n60

g20n60hs

Untitled

931 diode smd

HG20N60B3

relay 12v 1c/o

G20N60B3D