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    IGBT THEORY AND APPLICATIONS 400V

    Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
    Text: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page


    Original     		PDF AN-1086 1628/D. IGBT THEORY AND APPLICATIONS 400V TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor

    NT 407 F TRANSISTOR

    Abstract: NT 407 F power transistor motorola bipolar transistor MJE8503A Motorola Bipolar Power Transistor Data bipolar transistor td tr ts tf
    Text: MOTOROLA Order this document by MJE8503A/D SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching


    Original     		PDF MJE8503A/D MJE8503A* MJE8503A MJE8503A/D* NT 407 F TRANSISTOR NT 407 F power transistor motorola bipolar transistor Motorola Bipolar Power Transistor Data bipolar transistor td tr ts tf

    Untitled

    Abstract: No abstract text available
    Text: SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 Features 1 BVCES < 80V Ic=100µA) External dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A W


    Original     		PDF SSTA28 MMSTA28 SSTA28 SC-59 OT-346

    INDUCTION HEATING

    Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
    Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)


    Original     		PDF HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D

    2N6718

    Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
    Text: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100


    Original     		PDF O-237 2N6722 2N6723 TN2102 TN2219A TN2905A TN3019 TN3020 TN3053 TN3724 2N6718 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722

    FGPF4633

    Abstract: FGH40N60SFD fgpf50n33 FGA25N120 FGH60N60 fga70n33 fgd4536 FGH60N60SFD FGH40N60 fgh80n60
    Text: FAIRCHILD IGBTs, JFETs and Power MOSFETs Products may be RoHS compliant. Check mouser.com for RoHS status. *Kinked Leads ♦ Surface Mount Device MOUSER STOCK NO. Mfr. For quantities greater than listed, call for quote. Package Mfr. Part No. BVCES IC Min V (A)


    Original     		PDF O-220F 512-FGPF4633TU 512-FGD4536TM 512-HGTP7N60B3D O-252 512-HGT1S20N60C3S9A 512-FGP20N60UFDTU 512-FGAF40N60UFDTU FGPF4633 FGH40N60SFD fgpf50n33 FGA25N120 FGH60N60 fga70n33 fgd4536 FGH60N60SFD FGH40N60 fgh80n60

    transistor 13003L

    Abstract: APT13003LZ
    Text: A Product Line of Diodes Incorporated Green APT13003L 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 0.8A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF APT13003L MIL-STD-202, 200mg DS36306 transistor 13003L APT13003LZ

    GU13005S

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green APT13005S 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 3.2A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF APT13005S O220F-3 MIL-STD-202, 400mg 340mg O220F-3: 1500mg DS36309 GU13005S

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green APT27 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 0.8A high Continuous Collector Current  Lead-Free Finish; RoHS compliant Notes 1 & 2


    Original     		PDF APT27 MIL-STD-202, 200mg DS36301

    BC548 BH

    Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) TYPE NO. BVCBO BVCEO BVEBO *BVCES ICBO @ *I CEV @ VCB (V) (V) (V) (V) (nA) MIN MIN MIN MAX hFE @ VCE @ IC (V) (mA) VCE (SAT) @ IC toff Cob fT (pF) (MHz)


    Original     		PDF OT-23 350mW CMPT8099 CMPT2222A CMPT2222AE CMPT3904 CMPT3904E CMPT4401 BC548 BH BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp

    MMSTA28

    Abstract: SSTA28 T116 T146
    Text: SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 zFeatures 1 BVCES < 80V Ic=100µA) zExternal dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A


    Original     		PDF SSTA28 MMSTA28 SSTA28 SC-59 OT-346 MMSTA28 T116 T146

    NPN EBC SOT-23

    Abstract: SOT-23 EBC NPN transistor ECB TO-92
    Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003


    Original     		PDF PJP110A O-220 PJP168A PJ13003 PJ13005 PJ13007 NPN EBC SOT-23 SOT-23 EBC NPN transistor ECB TO-92

    bus98a

    Abstract: BUS98 1N4937 BUV20 MJE200 MJE210 buv20 equivalent
    Text: MOTOROLA Order this document by BUS98/D SEMICONDUCTOR TECHNICAL DATA Designer's BUS98 BUS98A  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES)


    Original     		PDF BUS98/D* BUS98/D bus98a BUS98 1N4937 BUV20 MJE200 MJE210 buv20 equivalent

    Untitled

    Abstract: No abstract text available
    Text: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)


    OCR Scan     		PDF O-257 O-254 SNG30620 SNG30620A SNG20640 SNG20648A SNG40635 SNG40648A SNG40660A SNG40675

    transistor R2U

    Abstract: SSTA63 marking B25 transistor b25
    Text: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)


    OCR Scan     		PDF OT-23) SSTA63 100MHz 200MHz 300MHz transistor R2U marking B25 transistor b25

    transistor R2U

    Abstract: transistor b25 B25-12 transistor
    Text: PNP Darlington transistor Die no. B-25 Dimensions Units : mm These are epitaxial planar PNP silicon Darlington transistors. SST3 Features • • 1.9±0.Z available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCes = 30 V (min)


    OCR Scan     		PDF OT-23) SSTA63 transistor R2U transistor b25 B25-12 transistor

    Untitled

    Abstract: No abstract text available
    Text: A POW ERHOUSE IGBT IQBT + SOFT RECOVERY/ULTRA FAST A.P. RECTIFIER PACKAGE DEVICE TYPE bvces VOLTS *C cont AMPS tf * VCE (sat) VOLTS nsec *rr *(1) Reverse Diode nsec PDISS WATTS “ TO-254 H TO-258 SNGD20620 600 20 2.6 570 130 75 SNGD20620A 600 20 3.1 310


    OCR Scan     		PDF O-254 SNGD20620 O-258 SNGD20620A SNGD20640 SNGD20648A SNGD21034 40A/nsec,

    Untitled

    Abstract: No abstract text available
    Text: IGBT IGBT + SOFT RECOVERY/ULTRA FAST A.P. RECTIFIER PACKAGE TO-254 TO-258 DEVICE TYPE BVCES VOLTS SNGD20620 600 SNGD20620A tf * l rr * 1 Reverse Diode nsec VCE (sat) VOLTS nsec 20 2.6 570 130 75 600 20 3.1 310 130 75 SNGD20640 600 40 2.0 800 150 125 SNGD20648A


    OCR Scan     		PDF SNGD20620 SNGD20640 SNGD21034 SNGD20648A O-258 SNGD20620A O-254 40A/nsec, flZS40EE

    BUS47

    Abstract: BUS47A
    Text: MOTOROLA SC -CXSTRS/R 6 3 6 7 2 54 F3- "Tt MOTOROLA SC XSTRS/R D-E~Jt.3t.7a5M 98D 8 0 7 2 1 F - MOTOROLA NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS (BVCEOI 150 WATTS 850 - 1000 V (BVCES) The BUS 4 7 and BUS 4 7 A transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall


    OCR Scan     		PDF Bb725M BUS47 BUS47A 100Khz) 250Vdc, 30jis, BUS47A

    STGB3NB60SDT4

    Abstract: No abstract text available
    Text: £jj Low drop, standard speed IGBTs - frequency up to 1kHz Part number BVces M STGB3NB60SDT4 STGD3NB60SDT4 STGD3NB60SD-1 STGF7NB60SL STGP10NB60SFP STGF10NB60SD STGD7NB60ST4 STGB10NB60ST4 STGP10NB60S STGP10NB60SD STGF20NB60S STGW35NB60SD STGE200NB60S 600 600


    OCR Scan     		PDF 00Irt stgb3nb60sdt4 stgd3nb60sdt4 stgd3nb60sd-1 stgf7nb60sl to-220fp stgp10nb60sfp stgf10nb60sd

    SGL40N150

    Abstract: SGH80N60UFD SGH40N60UFD IGBT Guide SGL60N90D F 10 L 600
    Text: IGBT Selection Guide SAMSUNG IGBT • High Performance Low Vce(sat ,High Speed) - Power Conversion Application PKG DEVICE Bvces [V] Ic [A] Vce(s)[V] (Min.) (Tc=100°C) (Typ.) Tf [ns] (Typ.) D-PAK SGR6N60UF 600 3 2.1 80 D2- PAK SGW6N60UF 600 3 2.1 80 SGW13N60UF


    OCR Scan     		PDF SGR6N60UF SGW6N60UF SGW13N60UF SGW23N60UF O-220 SGP6N60UF SGP13N60UF SGP23N60UF SGP40N60UF SGH40N60UF SGL40N150 SGH80N60UFD SGH40N60UFD IGBT Guide SGL60N90D F 10 L 600

    JE8503

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 6.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching


    OCR Scan     		PDF JE8503A* MJE8503A MJE8503A JE8503

    Transistor 3-354

    Abstract: TRANSISTOR 3356 BUS98 BUS96 ad 142 transistor bus98a C 3355 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850-1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high-voltage, high-speed,


    OCR Scan     		PDF BUS98 BUS98A BUS98A Transistor 3-354 TRANSISTOR 3356 BUS96 ad 142 transistor C 3355 transistor