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    HGT1S20N60C3S9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGT1S20N60C3S9A Fairchild Semiconductor 45 A, 600 V, UFS N-Channel IGBT Original PDF

    HGT1S20N60C3S9A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HGT1S20N60C3S9A Data Sheet August 2003 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGT1S20N60C3S9A 150oC. TA49178. PDF

    g20n60

    Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
    Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a PDF

    HGT1S20N60C3S9A

    Abstract: G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3
    Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC HGT1S20N60C3S9A G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3 PDF

    V30016

    Abstract: No abstract text available
    Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S 150oC. TA49178. V30016 PDF

    g20n60

    Abstract: HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334
    Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334 PDF