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onsemi HGTG20N60B3 IGBT 600V 40A 165W TO247
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Flip Electronics HGTG20N60B3 IGBT 600V 40A TO247-3
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DigiKey	HGTG20N60B3	Tube			200	1 - 10 - 100 - 1000 $2.87 10000 $2.87	Buy Now
Rochester Electronics LLC HGTG20N60B3 N-CHANNEL IGBT
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DigiKey	HGTG20N60B3	Tube			84	1 - 10 - 100 $3.59 1000 $3.59 10000 $3.59	Buy Now
onsemi HGTG20N60A4 IGBT 600V 70A TO247-3
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Rochester Electronics LLC HGTG20N50C1D 26A, 500V, N-CHANNEL IGBT
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DigiKey	HGTG20N50C1D	Bulk			40	1 - 10 - 100 $7.66 1000 $7.66 10000 $7.66	Buy Now

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HGTG20N Datasheets (54)

Part	Manufacturer	Description	Datasheet Type	PDF
HGTG20N100D2	Harris Semiconductor	20A, 1000V N-Channel IGBT	Original	PDF
HGTG20N100D2	Intersil	20A, 1000V N-Channel IGBT	Original	PDF
HGTG20N100D2	Intersil	Obsolete Product Datasheet	Scan	PDF
HGTG20N120	Intersil	34A, 1200V N-Channel IGBT	Original	PDF
HGTG20N120C3	Harris Semiconductor	600V / 1200V UFS Series IGBTs	Original	PDF
HGTG20N120C3D	Harris Semiconductor	600V / 1200V UFS Series IGBTs	Original	PDF
HGTG20N120C3D	Intersil	45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF
HGTG20N120CN	Fairchild Semiconductor	63A, 1200V, NPT N-Channel IGBT	Original	PDF
HGTG20N120CN	Fairchild Semiconductor	63A, 1200V, NPT Series N-Channel IGBT	Original	PDF
HGTG20N120CN	Intersil	63A, 1200V, NPT Series N-Channel IGBT	Original	PDF
HGTG20N120CND	Fairchild Semiconductor	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF
HGTG20N120CND	Fairchild Semiconductor	63A, 1200V, NPT N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF
HGTG20N120CND	Intersil	63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode	Original	PDF
HGTG20N120E2	Harris Semiconductor	34A, 1200V N-Channel IGBT	Original	PDF

HGTG20N120E2	Intersil	34A, 1200V N-Channel IGBT	Original	PDF
HGTG20N50C1D	Harris Semiconductor	20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode	Original	PDF
HGTG20N50C1D	Intersil	20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode	Original	PDF
HGTG20N60A4	Fairchild Semiconductor	600 V, SMPS N-Channel IGBT	Original	PDF
HGTG20N60A4	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTs	Original	PDF
HGTG20N60A4	Fairchild Semiconductor	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 290W TO247	Original	PDF

HGTG20N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G20N120CN Abstract: HGTG20N120CN HGTG20N120CND LD26 G20N120 Text: HGTG20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The HGTG20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	HGTG20N120CN HGTG20N120CN 340ns 150oC G20N120CN HGTG20N120CND LD26 G20N120	PDF
HG20N60B3 Abstract: hG20N60 hg20n60b3 equivalent Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state	Original	HGTG20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent	PDF
P channel 600v 20a IGBT Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ	Original	HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3	PDF
20n60c3DR Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D Text: HGTG20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as	Original	HGTG20N60C3DR 150oC 330ns 1-800-4-HARRIS 20n60c3DR 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D	PDF
g20n60 Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a	PDF
HG20N60B3 Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state	Original	HGTG20N60B3 HGTG20N60B3 150oC. TB334lopment. HG20N60B3 Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 LD26 RHRP3060 TB334 hg20n	PDF
G20N60B3D Abstract: G20N60B hg*20n60 Hgtg20n60 Text: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and	Original	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60	PDF
HGTP7N60B3D Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ	Original	HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S	PDF
HGTG20N120CND Abstract: 20N120CND LD26 20N120CN Text: HGTG20N120CND Data Sheet December 2001 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG20N120CND HGTG20N120CND 20N120CND LD26 20N120CN	PDF
20n60c3 Abstract: 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R Text: HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as	Original	HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 150oC 330ns 1-800-4-HARRIS 20n60c3 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R	PDF
HGTG20N60A4D Abstract: No abstract text available Text: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372.	PDF
20N60A4 Abstract: 20N60A4 equivalent IGBT 20n60a4 HGTG20N60A4 HGTP20N60A4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26 Text: HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 200kHz 125oC 20N60A4 20N60A4 equivalent IGBT 20n60a4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26	PDF
HG20N60B3 Abstract: hG20N60 HG20N60B hg20n60b3 equivalent TA49050 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n Text: HGTG20N60B3 Data Sheet August 2003 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state	Original	HGTG20N60B3 HGTG20N60B3 150oC. TB334 HG20N60B3 hG20N60 HG20N60B hg20n60b3 equivalent TA49050 LD26 RHRP3060 hg20n	PDF
HG20N60B3 Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a	Original	HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. TA49050. 1-800-4-HARRIS HG20N60B3 hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B	PDF

G20N60B3 Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60 Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC	Original	HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 G20N60 G20N60B LD26 RHRP3060 hg*20n60	PDF
HG20N60B3 Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B Text: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs	OCR Scan	HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B	PDF
20N60C3R Abstract: No abstract text available Text: HARRIS HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V T j = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as	OCR Scan	HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 20N60C3R	PDF
20N60C3DR Abstract: No abstract text available Text: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as	OCR Scan	HGTG20N60C3DR 330ns 20N60C3DR	PDF
relay 12v 1c/o Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3 Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	OCR Scan	TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178	PDF
G20N60B3D Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n Text: HGTG20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input	OCR Scan	HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n	PDF
PJ 969 diode Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode	OCR Scan	500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V	PDF
20N120CND Abstract: No abstract text available Text: HGTG20N120CND Semiconductor D a ta s h e e t 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best	OCR Scan	HGTG20N120CND HGTG20N120CND TA49other 1-800-4-HARRIS 20N120CND	PDF
Untitled Abstract: No abstract text available Text: HGTG20N120CND S e m iconductor Data Sheet 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best	OCR Scan	HGTG20N120CND HGTG20N120CND 1-800-4-HARRIS	PDF
Untitled Abstract: No abstract text available Text: HARRIS SEMICOND SECTOR bûE D • 43D2271 GÜSGS1S n i HHAS HGTG20N120E2 34A, 1200V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP VIP N • 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns t COLLECTOR BOTTOM SIDE	OCR Scan	43D2271 HGTG20N120E2 O-247 780ns HGTG20N120E2	PDF

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HGTG20N Search Results

HGTG20N Price and Stock

onsemi HGTG20N60B3

Flip Electronics HGTG20N60B3

Rochester Electronics LLC HGTG20N60B3

onsemi HGTG20N60A4

Rochester Electronics LLC HGTG20N50C1D

HGTG20N Datasheets (54)

HGTG20N Datasheets Context Search

G20N120CN

HG20N60B3

P channel 600v 20a IGBT

20n60c3DR

g20n60

HG20N60B3

G20N60B3D

HGTP7N60B3D

HGTG20N120CND

20n60c3

HGTG20N60A4D

20N60A4

HG20N60B3

HG20N60B3

G20N60B3

HG20N60B3

20N60C3R

20N60C3DR

relay 12v 1c/o

G20N60B3D

PJ 969 diode

20N120CND

Untitled

Untitled