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G24N60 Price and Stock

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Rochester Electronics LLC HG24N60D1D HG24N60D1D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HG24N60D1D	Bulk			58	1 - 10 - 100 $5.21 1000 $5.21 10000 $5.21	Buy Now
Rochester Electronics LLC HGTG24N60D1 UFS SERIES N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG24N60D1	Bulk			34	1 - 10 - 100 $8.93 1000 $8.93 10000 $8.93	Buy Now
Rochester Electronics LLC HGTG24N60D1D UFS SERIES N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG24N60D1D	Bulk			29	1 - 10 - 100 $10.4 1000 $10.4 10000 $10.4	Buy Now
Harris Semiconductor HG24N60D1D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HG24N60D1D		347		1	1 $8.96 10 $4.48 100 $3.8824 1000 $3.6736 10000 $3.6736	Buy Now
Rochester Electronics	HG24N60D1D		421		1	1 $5.01 10 $5.01 100 $4.71 1000 $4.26 10000 $4.26	Buy Now
Harris Semiconductor HGTG24N60D1 40A, 600V, RUGGED UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL ULTRAFAST DIODE '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTG24N60D1		24,999		1	1 $8.59 10 $8.59 100 $8.07 1000 $7.3 10000 $7.3	Buy Now

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G24N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G20N60 Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247 Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48	Original	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247	PDF
G24N60D1 Abstract: G24N60 AN7254 AN7260 HGTG24N60D1 Text: G24N60D1 24A, 600V N-Channel IGBT May 1995 Features Package • 24A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss Description	Original	HGTG24N60D1 O-247 500ns 150oC. G24N60D1 G24N60 AN7254 AN7260 HGTG24N60D1	PDF
g24n60d1d Abstract: g24n60d G24N60 HGTG24N60D1D AN7254 AN7260 g24n60d1 Text: G24N60D1D 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 24A, 600V EMITTER COLLECTOR GATE • Latch Free Operation • Typical Fall Time <500ns COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss	Original	HGTG24N60D1D O-247 500ns 150oC. g24n60d1d g24n60d G24N60 HGTG24N60D1D AN7254 AN7260 g24n60d1	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120	PDF
g24n60d1d Abstract: HGTG24N60D1D g24n60d1 AN7254 AN7260 g24n60d BVces Text: S E M I C O N D U C T O R G24N60D1D 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 24A, 600V EMITTER COLLECTOR GATE • Latch Free Operation • Typical Fall Time <500ns COLLECTOR BOTTOM SIDE	Original	HGTG24N60D1D O-247 500ns 150oC. g24n60d1d HGTG24N60D1D g24n60d1 AN7254 AN7260 g24n60d BVces	PDF
g24n60d1 Abstract: 240v DC motor AN7254 AN7260 HGTG24N60D1 G24N60 Text: G24N60D1 S E M I C O N D U C T O R 24A, 600V N-Channel IGBT May 1995 Features Package • 24A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss	Original	HGTG24N60D1 O-247 500ns 150oC. g24n60d1 240v DC motor AN7254 AN7260 HGTG24N60D1 G24N60	PDF
931 diode smd Abstract: g20n60 Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient	OCR Scan	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60	PDF
g24n60d1 Abstract: 24N60D1 24N60D Text: ^ ^ 3 G24N60D1 S E M I C O N D U C T O R 24A, 600V N-Channel IGBT May 1995 Features Package • 24A ,600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss Description Terminal Diagram	OCR Scan	HGTG24N60D1 O-247 500ns g24n60d1 24N60D1 24N60D	PDF