RHRG3040
Abstract: RHRG3050 RHRG3060 TA49063
Text: RHRG3040, RHRG3050, RHRG3060 April 1995 File Number 3938.2 30A, 400V - 600V Hyperfast Diodes Features RHRG3040, RHRG3050 and RHRG3060 TA49063 are hyperfast diodes with soft recovery characteristics (tRR < 40ns). They have half the recovery time of ultrafast diodes
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RHRG3040,
RHRG3050,
RHRG3060
RHRG3050
TA49063)
RHRG3040
RHRG3060
TA49063
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Untitled
Abstract: No abstract text available
Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP3060
RHRP3060
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RHRP3060
Abstract: TA49063 RHRP3040 RHRP3050
Text: RHRP3040, RHRP3050, RHRP3060 S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <40ns JEDEC TO-220AC • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
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RHRP3040,
RHRP3050,
RHRP3060
O-220AC
175oC
RHRP3050
TA49063)
RHRP3060
TA49063
RHRP3040
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G40N60
Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGT1Y40N60C3D
HGT1Y40N60C3D
150oC.
TA49273.
TA49063.
100ns
150oC
G40N60
g40n60c3d
HGTG40N60C3
RHRP3060
TA49063
TA49389
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RHRG3060c
Abstract: 600v 30a RHRG3040CC RHRG3060CC TA49063
Text: RHRG3040CC, RHRG3060CC Data Sheet January 2000 File Number 3939.3 30A, 400V - 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride
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RHRG3040CC,
RHRG3060CC
RHRG3040CC
RHRG3060CC
RHRG3060c
600v 30a
TA49063
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TA49063
Abstract: RHRP3060
Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP3060
RHRP3060
TA49063
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RHRG3040
Abstract: RHRG3050 RHRG3060 TA49063
Text: RHRG3040, RHRG3050, RHRG3060 S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <40ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RHRG3040,
RHRG3050,
RHRG3060
O-247
RHRG3050
TA49063)
175oC
RHRG3040
RHRG3060
TA49063
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ta49063
Abstract: RHRG*40 RHRG3040 RHRG3060
Text: RHRG3040, RHRG3060 Data Sheet January 2000 File Number 3938.3 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride
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RHRG3040,
RHRG3060
RHRG3040
RHRG3060
ta49063
RHRG*40
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RHRP3040
Abstract: RHRP3060 TA49063
Text: RHRP3040, RHRP3060 Data Sheet Title HR 040, HRP 60 bt A, 0V 0V pert odes utho eyrds A, 0V 0V pert odes terrpoon, pert odes vache ergy ted, itch January 2000 File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with
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RHRP3040,
RHRP3060
RHRP3040
RHRP3060
TA49063
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g20n60c3d
Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
Text: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG20N60C3D
HGTG20N60C3D
150oC.
TA49178.
RHRP3060
TA49063)
g20n60c3d
g20n60c3d equivalent
LD26
RHRP3060
TA49063
TA49178
g20n60
HGTG20N60C3
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RHRG3060C
Abstract: RHRG3040CC RHRG3050CC RHRG3060CC TA49063
Text: RHRG3040CC, RHRG3050CC, RHRG3060CC S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Dual Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <40ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RHRG3040CC,
RHRG3050CC,
RHRG3060CC
O-247
RHRG3050CC
RHRG3060CC
175oC
RHRG3060C
RHRG3040CC
TA49063
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G20N60C3D
Abstract: HGTG20N60C3D RHRP3060 TA49063 TA49178 TA49179
Text: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG20N60C3D
HGTG20N60C3D
150oC.
TA49178.
RHRP3060
TA49063)
G20N60C3D
RHRP3060
TA49063
TA49178
TA49179
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Untitled
Abstract: No abstract text available
Text: RHRG3040CC, RHRG3060CC Data Sheet January 2002 30A, 400V - 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride
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RHRG3040CC,
RHRG3060CC
RHRG3040CC
RHRG3060CC
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RHRG3040
Abstract: RHRG3060 TA49063
Text: RHRG3040, RHRG3060 Data Sheet Title HR 040, HRG 60 bt A, 0V 0V pert odes eyrds A, 0V 0V pert odes terrpoon, minctor, ache ergy ted, itch wer p- File Number 3938.3 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with
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PDF
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RHRG3040,
RHRG3060
RHRG3040
RHRG3060
TA49063
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Untitled
Abstract: No abstract text available
Text: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride
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Original
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PDF
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RHRG3040,
RHRG3060
RHRG3040
RHRG3060
175oC
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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RHRG3060
Abstract: RHRG3040 TA49063
Text: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride
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RHRG3040,
RHRG3060
RHRG3040
RHRG3060
175oC
TA49063
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RHRP3040
Abstract: RHRP3060 TA49063
Text: RHRP3040, RHRP3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride
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Original
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PDF
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RHRP3040,
RHRP3060
RHRP3040
RHRP3060
175oC
TA49063
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g40n60b3d
Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063
Text: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGT1Y40N60B3D
HGT1Y40N60B3D
150oC.
TA49052.
TA49063.
g40n60b3d
G40N60
g40n60b3
hgtg40n60b3
g40n60b
TA49052
tr c110
RHRP3060
TA49063
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Untitled
Abstract: No abstract text available
Text: RHRG3040, RHRG3050, RHRG3060 Semiconductor April 1995 File Number 3938.2 30A, 400V - 600V Hyperfast Diodes Features RHRG3040, RHRG3050 and RHRG3060 TA49063 are hyperfast diodes with soft recovery characteristics (tp p < 40ns). They have half the recovery time of ultrafast diodes
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OCR Scan
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PDF
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RHRG3040,
RHRG3050,
RHRG3060
RHRG3050
TA49063)
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RG-306
Abstract: RG306
Text: rCl H A R R IS uu s B . , RHRG3040CC RHRG3050CC, RHRG3060CC o o H D » c T o . 30A, 400V - 600V Hyperfast Dual Diodes November 1994 Package Features JE D E C STYLE TO-247 TOP VIEW • Hyperfast with Soft Recovery. <40ns • Operating
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OCR Scan
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PDF
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RHRG3040CC
RHRG3050CC,
RHRG3060CC
O-247
RHRG3040CC,
3050C
RG3060CC
TA49063)
RG-306
RG306
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Untitled
Abstract: No abstract text available
Text: fH H a r r is U U RHRP3040, RHRP3050, RHF^P3060 S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Package Features H y p erfa s t w ith S o ft R ec o v e ry ,<40ns • O p era tin g T e m p e ra tu r e . +175°C • R ev e rse V oltag e U p T o .
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OCR Scan
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RHRP3040,
RHRP3050,
P3060
O-220AC
RHRP3050
RHRP3060
TA49063)
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Untitled
Abstract: No abstract text available
Text: RHRP3040, RHRP3050, RHRP3060 Semiconductor April 1995 These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft
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OCR Scan
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PDF
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RHRP3040,
RHRP3050,
RHRP3060
RHRP3050
TA49063)
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RHRG3060C
Abstract: TA49063 RHRG3040CC RHRG3060CC
Text: in terrii RHRG3040CC, RHRG3060CC J a n u a ry . w in Data Sheet File Num ber 3939.3 30A, 400V 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride
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OCR Scan
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PDF
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RHRG3040CC,
RHRG3060CC
RHRG3040CC
RHRG3060CC
TA49063.
RHRG3060C
TA49063
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