KF448AV
Abstract: R015 marking
Text: SAW FILTER KF448AV TECHNICAL DATA SPECIFICATIONS FOR SAW FILTER Band pass filters for keyless Entry System. High stability and reliability with good performance and no adjustment. Wide and sharp pass band characteristics. B Low insertion loss and deep stop band attenuation for interference.
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KF448AV
fO-44
fO-41
KF448AV
R015 marking
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TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
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MC3403
2N2219
1N4148
MBC775
TRANSISTOR SMD MARKING CODE NM
philips capacitor part numbering system
SOT123 transistor marking 04
smd-transistor DATA BOOK
TRANSISTOR SMD MARKING CODE KF
TRANSISTOR SMD MARKING CODE wps
DIODE marking EG 83A
2N2219 JANTX
sot391
small signal transistor marking codes
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Meggitt 5w
Abstract: Meggitt CGS power resistor CGS 1R0 Meggitt CGS axial leaded resistor meggitt cgs 220r FCB meggitt resistors meggitt resistor 20k ohms
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistor TYPE FC SERIES This small size pluggable, high power resistor is a popular product in the Meggitt CGS range. The resistors are wirewound on to an inert core of glass
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Temex saw filter
Abstract: TMX Temex SAW filter marking code
Text: SAW Filters TMX ET03 SAW Bandpass Filter - RF Preliminary Specification Rev 1 Features .P01 Package Drawing & Pin out .P01 Technical Characteristics .P02
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Contro10
Temex saw filter
TMX Temex
SAW filter marking code
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meggitt resistor 20k ohms
Abstract: No abstract text available
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistor TYPE FC SERIES This small size pluggable, high power resistor is a popular product in the Meggitt CGS range. The resistors are
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MEGGITT CGS SP
Abstract: mec CGS
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS SMD Precision Current Sense Resistor TYPE S SERIES MEC CGS introduces a range of surface mount power resistors to meet today's circuit design needs. One design concept allows an engineer to choose from three styles Lo Ohm,
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Untitled
Abstract: No abstract text available
Text: SAW FILTER KF448AV TECHNICAL DATA SPECIFICATIONS FOR SAW FILTER Band pass filters for keyless Entry System. ・High stability and reliability with good performance and no adjustment. ・Wide and sharp pass band characteristics. ・Low insertion loss and deep stop band attenuation for interference.
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KF448AV
fO-44
fO-41
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H440
Abstract: PTB23001X PTB23003X PTB23003XA PTB23005X OC292
Text: P T B 23001X PTB23003X PT B 2 3 0 0 5 X PTB 23003XA PHILIPS INTERNATIONAL 5L.E T> m 7 11 0 fl2ti GCmfc.42fc, fl Tb M P H I N MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide
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PTB23001X
PTB23003X
PTB23005X
PTB23003XA
711Dfl2t
D04b42b
PTB23003XA
PTB23003X.
t-33-01
H440
OC292
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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LbS3T31
LTE21025R
FO-41B)
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Untitled
Abstract: No abstract text available
Text: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B
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001fc
PTB23001X
PTB23003X
PTB23005X
FO-41B
PTB32001X
PTB32003X
PTB32005X
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Untitled
Abstract: No abstract text available
Text: OLE D N AMER PHILIPS/DISCRETE MAINTENANCE TYPE • bbS3T31 DDmT 31 LJE42002T T*- 3 3 - 0 S' MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-emitter class-A amplifiers up to 4 GHz.
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bbS3T31
LJE42002T
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r3305
Abstract: PTB32005X PTB32001X PTB32003X
Text: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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PTB32001X
PTB32003X
PTB32005X
bfci53cÃ
001510e}
PTB32003X
r3305
PTB32005X
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LTE42012R
Abstract: 5j12 transistor 307A
Text: N AMER PHILIPS/DI SCRETE GbE D ^ 5 3 ^ 3 1 D 0 m *177 LTE42012R T-ZZ-OÉr M ICROW AVE LINEAR POWER T RA N SISTO R N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 G H z in c.w. conditions in military and professional applications.
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LTE42012R
T-32-Oir
5j12
transistor 307A
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IEC134
Abstract: PTB42001X PTB42002X RTC4202X
Text: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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bL53T31
PTB4200Ã
PTB42002X
33-or
PTB42001X
PTB42002X
IEC134
RTC4202X
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TRANSISTOR K 314
Abstract: MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083
Text: V-3 3 '0 7 PTB42003X / \ _ PHILIPS INTERNATIONAL 5L.E D • 711D05b 004b44fl Mb? ■ PHIN MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.
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V33-07
PTB42003X
004b44fl
TRANSISTOR K 314
MARKING 41B
marking A1 TRANSISTOR
PTB42003X
7Z94083
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lte4002s
Abstract: 005129 industrial linear ic
Text: D EVELO PM EN T DATA LTE4002S T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cificatio n s are subject t o c hange w it h o u t notice. PHILIPS INTERNAT ION AL SbE ]> • 711DflEb 004b514 SIS PHIN M IC R O W A V E LINEAR PO W ER T R A N SIST O R
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LTE4002S
711DflSb
004bS14
lte4002s
005129
industrial linear ic
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE • ObE D ■ bbSBIBl O D m T S B b ■ DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J ■ - _ 11 LTE4002S - -r — - ~ •
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LTE4002S
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D • bbS3T31 0015115 4 ■ PTB42003X T - 33 - 0 7 MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.
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bbS3T31
PTB42003X
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Untitled
Abstract: No abstract text available
Text: SAW FILT ER TECHNICAL DATA KF931/V SPECIFICATIONS FOR SAW FILTER Band pass filters for RF circuits of Cordless phone CT-1+ • High stability and reliability with good performance and no adjustment. • Wide and sharp pass band characteristics. • Low insertion loss and deep stop band
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KF931
KF931V
SC-44
KF931/V
fo-23
fo-19
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lte2
Abstract: 0261 230 154 LTE21009R LTE21015R
Text: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -
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LTE21009R
LTE21015R
FO-41B)
lte2
0261 230 154
LTE21009R
LTE21015R
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Microwave Transistors General TYPE DESIGNATION CODE F o u r t h l e t t e r s u f f i x l e t t e r Code structure The fourth letter indicates the supply voltage: The standard structures of type designation code for
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XXX00000X
XXX0000X000X
OT439A
FO-91B)
OT443A
FO-57C)
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich
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LTE42005S
LTE42008R
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OC1016
Abstract: SFE 1730 LTE21025R LTE21050R
Text: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R
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Lb53T31
LTE21025R
FO-41B)
OC1016
SFE 1730
LTE21025R
LTE21050R
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application for bt 151
Abstract: LTE42005S LTE42008R R3305
Text: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich
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bL53131
LTE42005S
LTE42008R
LTE42005S
application for bt 151
LTE42008R
R3305
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