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    LTE2 Price and Stock

    Multi-Tech Systems Inc ANLTE2-10HRA

    ANTENNA RF LTE 3.5DBI 7"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ANLTE2-10HRA Bag 2,190 1
    • 1 $6.51
    • 10 $5.877
    • 100 $4.8656
    • 1000 $4.81248
    • 10000 $4.81248
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    Avnet Americas ANLTE2-10HRA Bulk 20 Weeks 10
    • 1 $55
    • 10 $55
    • 100 $55
    • 1000 $55
    • 10000 $55
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    Mouser Electronics ANLTE2-10HRA 48
    • 1 $58.37
    • 10 $49.18
    • 100 $49.18
    • 1000 $49.18
    • 10000 $49.18
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    Snap-Loc Cargo Control SLTE220RR

    2" X 20' E-TRACK TIE-DOWN STRAP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SLTE220RR Ammo Pack 1,000 2
    • 1 -
    • 10 $18.99
    • 100 $18.99
    • 1000 $18.99
    • 10000 $18.99
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    Snap-Loc Cargo Control SLTE212CR

    2" X 12' E-TRACK TIE-DOWN STRAP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SLTE212CR Ammo Pack 1,000 2
    • 1 -
    • 10 $16.99
    • 100 $16.99
    • 1000 $16.99
    • 10000 $16.99
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    Snap-Loc Cargo Control SLTE208CR

    2" X 8' E-TRACK TIE-DOWN STRAP W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SLTE208CR Ammo Pack 1,000 2
    • 1 -
    • 10 $15.99
    • 100 $15.99
    • 1000 $15.99
    • 10000 $15.99
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    Snap-Loc Cargo Control SLTE216RR

    2" X 16' E-TRACK TIE-DOWN STRAP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SLTE216RR Ammo Pack 1,000 2
    • 1 -
    • 10 $17.99
    • 100 $17.99
    • 1000 $17.99
    • 10000 $17.99
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    Find more LTE2 price and stock on Findchips.com

    LTE2 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LTE-209 Lite-On Technology IrED, Single, 940nm Wave Length Original PDF
    LTE-209 Lite-On Technology LED Original PDF
    LTE-209 Lite-On Technology Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR 3MM 940NM CLEAR DIP Original PDF
    LTE209 Lite-On Technology GaAs T-1 Modified Infrared Emitting Diode Scan PDF
    LTE-209C Lite-On Technology GaAlAs T-1 Modified 3 phi Infrared Emitting Diode Original PDF
    LTE209C Lite-On Technology GaAs T-1 Modified Infrared Emitting Diode Scan PDF
    LTE21009 Philips Semiconductors Original PDF
    LTE21009R Advanced Semiconductor Transistor Original PDF
    LTE21009R Philips Semiconductors NPN Microwave Power Transistor Original PDF
    LTE21009R Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LTE21009R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LTE21009R Philips Semiconductors Microwave Linear Power Transistor Scan PDF
    LTE21009RA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LTE21009RA Philips Semiconductors Microwave Linear Power Transistor Scan PDF
    LTE21009RTRAY Philips Semiconductors TRANS GP BJT NPN 16V 0.25A 3SOT440A Original PDF
    LTE21015R Advanced Semiconductor Transistor Original PDF
    LTE21015R Philips Semiconductors NPN microwave power transistor Original PDF
    LTE21015R Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LTE21015R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LTE21015R Philips Semiconductors NPN microwave power transistor Scan PDF

    LTE2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP317

    Abstract: LTE21025R marking code 439
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent


    Original     		PDF LTE21025R OT440A SCA53 127147/00/02/pp8 BP317 LTE21025R marking code 439

    Untitled

    Abstract: No abstract text available
    Text: LTE21025R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)800m Absolute Max. Power Diss. (W)8.0¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF LTE21025R

    LTE21009R

    Abstract: No abstract text available
    Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 250 mA


    Original     		PDF LTE21009R LTE21009R

    Untitled

    Abstract: No abstract text available
    Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Gold Metalization • Emitter Ballasting Dim: A B C D E MAXIMUM RATINGS


    Original     		PDF LTE21009R LTE21009R

    MCD628

    Abstract: LTE21015R SC15 SOT440A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor


    Original     		PDF LTE21015R OT440A SCA53 127147/00/02/pp12 MCD628 LTE21015R SC15 SOT440A

    ALT6740

    Abstract: ALT6740RM45Q7 6740r
    Text: HELP4 TM ALT6740 LTE2300 Band 40 TD-LTE Linear PAM DATA SHEET - Rev 2.2 FEATURES • LTE Compliant • 4th Generation HELPTM technology • High Efficiency (LTE MPR = 0 dB): • 32 % @ POUT = +27.7 dBm • 23 % @ POUT = +16 dBm • 17 % @ POUT = +6 dBm ALT6740


    Original     		PDF LTE2300 ALT6740 ALT6740 ALT6740RM45Q7 6740r

    d 317 transistor

    Abstract: LTE21015R common emitter amplifier b 342 d transistor
    Text: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Replacement for Philips LTE21015R • Gold Metalization • Emitter Ballasting


    Original     		PDF LTE21015R LTE21015R ASI10473 d 317 transistor common emitter amplifier b 342 d transistor

    ALT6740

    Abstract: LTE band 40 amplifier
    Text: HELP4 TM ALT6740 LTE2300 Band 40 TD-LTE Linear PAM DATA SHEET - Rev 2.1 FEATURES • LTE Compliant • 4th Generation HELPTM technology • High Efficiency (LTE MPR = 0 dB): • 32 % @ POUT = +27.7 dBm • 23 % @ POUT = +16 dBm • 17 % @ POUT = +6 dBm ALT6740


    Original     		PDF LTE2300 ALT6740 ALT6740 LTE band 40 amplifier

    Untitled

    Abstract: No abstract text available
    Text: • □ t>E D N AUER P H IL IP S /D IS C R E T E MAINTENANCE TYPE ■ t.b 5 3 i3 ]> ■ OOlMTSS ■ LKE1004R for new design use LTE21009R T - 3 3 - OS" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a common-emitter class-A linear power amplifier up to 1 GHz.


    OCR Scan     		PDF LKE1004R LTE21009R)

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


    OCR Scan     		PDF LbS3T31 LTE21025R FO-41B)

    Untitled

    Abstract: No abstract text available
    Text: J_£, N AMER PHILIPS/DISCRETE ObE D • bb53T31 0014^3=1 1 ■ LKE2015T MAINTENANCE TYPE for new design use LTE21015R T-23-^5" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich


    OCR Scan     		PDF bb53T31 LKE2015T LTE21015R)

    RTC144

    Abstract: LKE2015T LTE21015R
    Text: N AUER PHILIPS/DISCRETE ObE D • ^53=131 G O I M ^ MAINTENANCE TYPE 1 ■ LKE20Ï5T for new design use LTE21015R T - 2 3 - 0 5 - M ICROW AVE LINEAR POW ER TRANSISTO R N-P-N transistor for use in a common-emitter ciass-A linear power amplifier up to 2 GHz.


    OCR Scan     		PDF LTE21015R) LKE20Ã T-23-Ã FO-53. T-33-QS RTC144 LKE2015T LTE21015R

    LKE21015T

    Abstract: LTE21015R
    Text: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 0014^43 3 ■ II ' MAINTENANCE TYPE for newdesignuse LTE21015R J LKE21015T 3 3 ~ ¿7S ' I MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF bb53T31 LKE21015T LTE21015R) LKE21015T LTE21015R

    R3305 transistor

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D bb53T31 0014^43 3~" • A MAINTENANCE TYPE for new design use LTE21015R LKE21015T T - 3 3 -OS’ MICROW AVE LINEAR POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF bb53T31 LTE21015R) LKE21015T FO-53. R3305 transistor

    lte2

    Abstract: 0261 230 154 LTE21009R LTE21015R
    Text: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -


    OCR Scan     		PDF LTE21009R LTE21015R FO-41B) lte2 0261 230 154 LTE21009R LTE21015R

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF LTE21015R OT44QA MGL062

    Untitled

    Abstract: No abstract text available
    Text: TTamer philips /discrete □ bE D bb53^31 □014T41 T M A IN TEN A N C E TYPE LKE21004R J for new design use LTE21009R MICROW AVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich


    OCR Scan     		PDF 014T41 LKE21004R LTE21009R)

    OC1016

    Abstract: SFE 1730 LTE21025R LTE21050R
    Text: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R


    OCR Scan     		PDF Lb53T31 LTE21025R FO-41B) OC1016 SFE 1730 LTE21025R LTE21050R

    LTE21009R

    Abstract: SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile


    OCR Scan     		PDF LTE21009R OT440A OT440A. LTE21009R SC15

    A83A marking

    Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
    Text: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		PDF LTE21009R LTE21009RA 711002b FO-41B) LTE21009RA A83A marking 113A db 435A 95A 640 marking 113a transistor 81 110 w 85 MARKING 41B marking code 41b

    Untitled

    Abstract: No abstract text available
    Text: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


    OCR Scan     		PDF DD14TS7 LTE21009R LTE21015R FO-41B)

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE QbE ] • tbSBTBl O Q m T B ? fi ■ MAINTENANCE TYPE LKE2004T for new design use LTE21009R) MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF LKE2004T LTE21009R)

    LKE2004T

    Abstract: LTE21009R
    Text: N AMER PHILIPS/DISCRETE ObE D • 1.^53^31 o o m ^ B ? a ■ MAINTENANCE TYPE LKÉ2004T for new design use LTE21009R r - iZ-Osr MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF LTE21009R) 2004T LKE2004T LTE21009R

    LTE21015R

    Abstract: SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R PINNING - SOT44QA FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF LTE21015R OT440A OT440A. LTE21015R SC15