TRANSISTOR K 314
Abstract: MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083
Text: V-3 3 '0 7 PTB42003X / \ _ PHILIPS INTERNATIONAL 5L.E D • 711D05b 004b44fl Mb? ■ PHIN MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.
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V33-07
PTB42003X
004b44fl
TRANSISTOR K 314
MARKING 41B
marking A1 TRANSISTOR
PTB42003X
7Z94083
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8002 AUDIO amplifier
Abstract: 8002 audio amplifier 8 pin NE5532 SE663 JIS B 0041 SL003 NE5532N NE5532D8 professional audio power amplifier schematics NE5532AN
Text: Product specification Internally-compensated dual low noise operational amplifier DESCRIPTION Q PIN CONFIGURATIONS The 5532 is a dual high-performance low noise operational amplifier. Compared to most of the standard operational amplifiers, such as the 1458, it shows better noise performance, improved output drive
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NE/SE5532/5532A
OT38-4
E/SE5532/5532A
53-0580A
7110fl2Ej
8002 AUDIO amplifier
8002 audio amplifier 8 pin
NE5532
SE663
JIS B 0041
SL003
NE5532N
NE5532D8
professional audio power amplifier schematics
NE5532AN
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FT501
Abstract: No abstract text available
Text: BD949; 951 BD953; 955 5bE D PHILIPS INTERNATIONAL • 711002b □ 0 4 3 0 t]fl b^7 H P H I N T-J3-H SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0-22 0 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended for use in a wide range of power amplifiers and for switching applications.
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BD949;
BD953;
711002b
BD950;
BD949
BD951
BD953
7110fl2b
FT501
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FMCON
Abstract: EA28 80C51 P80CE528 P80CE528EBA P80CE528EBB P80CE528EFB P83CE528 P89CE528
Text: PHILIPS INTERNATIONAL bSE D B 711Qfl2b QDbl2b3 1S1 • P H I N Philips Semiconductors Preliminary specification 8-bit microcontroller with EMC and FEEPROM P8xCE528 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 3.1 4 ELECTROMAGNETIC COMPATIBILITY EMC Recommendation on ALE
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711Qfl2b
P8xCE528
FMCON
EA28
80C51
P80CE528
P80CE528EBA
P80CE528EBB
P80CE528EFB
P83CE528
P89CE528
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BAS45L
Abstract: S18B
Text: SbE D m 711DÖ5b 0DMD1Ö7 T1D « P H I N PHILIPS INTERNATIONAL BAS 45L SbE D T -O T -tS LOW LEAKAG E DIODE FOR SURFACE M OUNTING The BAS45L is a switching diode w ith a very low reverse current. This SM diode is a leadless diode in a hermetically sealed SOD-8 O envelope w ith lead/tin-plated metal
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BAS45L
T-07-1
BAS45L
T-07-15
S18B
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OM4873
Abstract: rav21 fxs 100 10 PCE84C882 PCE84C886 SDIP42 AN94049 65432
Text: Preliminary specification Philips Semiconductors Microcontroller for monitor OSD and auto-sync applications _ PCE84C882 CONTENTS 1 2 OSD CONTROL REGISTERS 12.7 Derivative Derivative Derivative Derivative Derivative Derivative Derivative 13 TO FORMAT THE OSD
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14-bit
OM4873
rav21
fxs 100 10
PCE84C882
PCE84C886
SDIP42
AN94049
65432
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