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    FLC16 Search Results

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    FLC16 Price and Stock

    MtronPTI M63002HBFLC 160.000000

    5x7 mm, 3.3 Volts, TCXO,Low phas
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M63002HBFLC 160.000000 Bulk 9 2
    • 1 -
    • 10 $109.46
    • 100 $109.46
    • 1000 $109.46
    • 10000 $109.46
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    Citizen Finedevice Co Ltd CMX309FLC16.000MT

    XTAL OSC XO 16.0000MHZ CMOS TTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMX309FLC16.000MT Reel 1,000
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    • 100 -
    • 1000 $1.16156
    • 10000 $1.16156
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    Citizen Finedevice Co Ltd CMX309FLC16.000M-UT

    XTAL OSC XO 16.0000MHZ CMOS TTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMX309FLC16.000M-UT Reel 1,000
    • 1 -
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    • 1000 $1.08412
    • 10000 $1.08412
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    CMX309FLC16.000M-UT Cut Tape 1
    • 1 $1.65
    • 10 $1.65
    • 100 $1.65
    • 1000 $1.65
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    FUJITSU Limited FLC161WF

    TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLC161WF 19
    • 1 $42.9
    • 10 $42.9
    • 100 $41.25
    • 1000 $41.25
    • 10000 $41.25
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    BQ Cable FLC-16/30-E

    Wire: ribbon; 1.27mm; stranded; Cu; unshielded; PVC; grey; 30.5m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME FLC-16/30-E 97 1
    • 1 $30.9
    • 10 $22.3
    • 100 $19.7
    • 1000 $19.7
    • 10000 $19.7
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    FLC16 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLC161WF Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLC161WF Unknown FET Data Book Scan PDF
    FLC167WF Eudyna Devices TRANS JFET 15V 3WF Original PDF
    FLC167WF Fujitsu C-Band Power GaAs FET Original PDF
    FLC167WF-E1 Fujitsu FET: P Channel: ID 0.9 A Original PDF

    FLC16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original     		PDF FLC167WF FLC167WF FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original     		PDF FLC167WF FLC167WF

    Eudyna Devices

    Abstract: FLC167WF
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original     		PDF FLC167WF FLC167WF Sto4888 Eudyna Devices

    FLC167WF

    Abstract: No abstract text available
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original     		PDF FLC167WF FLC167WF

    FLC161WF

    Abstract: flc161 FLC161WF/101
    Text: FLC161WF C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC161WF is a power GaAs FET that is designed for general


    Original     		PDF FLC161WF FLC161WF flc161 FLC161WF/101

    FLC167WF

    Abstract: flc167
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original     		PDF FLC167WF FLC167WF FCSI0598M200 flc167

    Untitled

    Abstract: No abstract text available
    Text: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FLC/Low-ratio Fusing ¥Features 1. Low-ratio fusing. •Rated Current i140% fusing 120s Typical. 2. Certified UL, and c-UL. ·File No. : E176847 L C L US L L 3.Major application L L •PC related equipment and peripherals (PC, Hard Drive, Printer etc.).


    Original     		PDF E176847 FLC16 002AB FLC16

    Untitled

    Abstract: No abstract text available
    Text: NEW CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FLC/Low-ratio Fusing •Features 1. Low-ratio fusing. •Rated Current i140% fusing 120s Typical. 2. Certified UL, and c-UL. ·File No. : E176847 C L L US L L 3.Major application L L •PC related equipment and peripherals (PC, Hard Drive, Printer etc.).


    Original     		PDF E176847 FLC16 102AB

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION OF FLC□□□□□□NLCL SERIES FEATURES 1. Very strong solderability by flow soldering , soldering iron. 2. Highly accurate dimensions , can be mounted automatically. 3. Terminals are highly resistant to pull forces. 4. Highly resistant to mechanical shocks and pressure.


    Original     		PDF 3808NLCL7R8â FLC160808NLCL8R2â FLC160808NLCL100â FLC160808NLCL1R0KT FLC160808NLCL

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION OF FLC□□□□□□NLCL SERIES FEATURES 1. Very strong solderability by flow soldering , soldering iron. 2. Highly accurate dimensions , can be mounted automatically. 3. Terminals are highly resistant to pull forces. 4. Highly resistant to mechanical shocks and pressure.


    Original     		PDF FLC252018NLCL330â FLC252018NLCL390â FLC252018NLCL470â FLC252018NLCL1R0KT

    Untitled

    Abstract: No abstract text available
    Text: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FLC/Low-ratio Fusing •Features 1. Low-ratio fusing. •Rated Current i140% fusing 120s Typical. 2. Certified UL, and c-UL. ·File No. : E176847 C L L US L L 3.Major application L L •PC related equipment and peripherals (PC, Hard Drive, Printer etc.).


    Original     		PDF E176847 FLC16 102AB

    FLC252018NLCL

    Abstract: No abstract text available
    Text: SPECIFICATION OF FLC□□□□□□NLCL SERIES FEATURES 1. Very strong solderability by flow soldering , soldering iron. 2. Highly accurate dimensions , can be mounted automatically. 3. Terminals are highly resistant to pull forces. 4. Highly resistant to mechanical shocks and pressure.


    Original     		PDF 3252018NLCL330â FLC252018NLCL390â FLC252018NLCL470â FLC252018NLCL1R0KT FLC252018NLCL

    Untitled

    Abstract: No abstract text available
    Text: NEW CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FLC/Low-ratio Fusing •Features 1. Low-ratio fusing. •Rated Current i140% fusing 120s Typical. 2. Certified UL, and c-UL. ·File No. : E176847 C L L US L L 3.Major application L L •PC related equipment and peripherals (PC, Hard Drive, Printer etc.).


    Original     		PDF E176847 FLC16 FSC16 102AB

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FLC161WF FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 31.8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC161WF is a power GaAs FET that is designed for general


    OCR Scan     		PDF FLC161WF FLC161WF

    FLC161

    Abstract: No abstract text available
    Text: FLC161WI C-Kand Power j ü A s ! ET s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C IfeMn Symbol Condition Rating UMt Drain-Source Voltage Vd S 15 V Gate-Source Voltage Vg S -5 V 7.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature


    OCR Scan     		PDF FLC161WI Gate22 FLC161

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    FLL55

    Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
    Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.


    OCR Scan     		PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan     		PDF FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK