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    FLC167WF Search Results

    FLC167WF Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLC167WF Eudyna Devices TRANS JFET 15V 3WF Original PDF
    FLC167WF Fujitsu C-Band Power GaAs FET Original PDF
    FLC167WF-E1 Fujitsu FET: P Channel: ID 0.9 A Original PDF

    FLC167WF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original
    FLC167WF FLC167WF FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original
    FLC167WF FLC167WF PDF

    Eudyna Devices

    Abstract: FLC167WF
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original
    FLC167WF FLC167WF Sto4888 Eudyna Devices PDF

    FLC167WF

    Abstract: No abstract text available
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original
    FLC167WF FLC167WF PDF

    FLC167WF

    Abstract: flc167
    Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general


    Original
    FLC167WF FLC167WF FCSI0598M200 flc167 PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original
    FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


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    FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF