Untitled
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
FCSI0598M200
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FLU10XM
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
V4888
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FLU10XM
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
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Untitled
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
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FLU10XM
Abstract: FLU10
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
VGS794
FLU10
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FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
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FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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FLU10XM
Abstract: No abstract text available
Text: FLU10XM _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-|C|g=29.5dBnn Typ. High Gain: G-|C|g=14.5dB (Typ.) High PAE: riadd=47% (Typ.) Hermetic Metal/Ceramic (SMT) Package Tape and Reel Available
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FLU10XM
FLU10XM
FCSI0598M200
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FLL55
Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.
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FLU10XM
FLU17XM
FLU35XM
FLL101ME
FLL171ME
FLL351ME
FLL55MK
FLL120MK
FLL200IB-1*
FLL200IB-2*
FLL55
FLL101ME
FLC253MH-6
FLU10XM
fll300ip-2
flu10
fll171
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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