Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLASH MEMORY 48F Search Results

    FLASH MEMORY 48F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F020-90 Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    TN28F010-90 Rochester Electronics LLC 28F010 - 1-Mbit (128k x 8) NOR Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-90/B Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-12/B Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy

    FLASH MEMORY 48F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a21l

    Abstract: MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 96M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM MB84VFAF5F5J1-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V


    Original     		MB84VFAF5F5J1-70 115-ball F0211 MB84VFAF5F5J1 a21l MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400 PDF

    s5l840fx

    Abstract: S5L840F calmRISC16 P9336 and pin diagram of MMC 4017 CalmRISC-16 player audio to flash memoy s5l8 samsung i2s S5H5002
    Text: CPAD-WALTZ S5L840F Internet Audio Decoder for Flash Memory Media Data Sheet INTRODUCTION S5L840F is a single chip digital audio player IC supporting various compressed audio format on Flash Memory Media. S5L840F provides 2Mbits of embedded NOR flash memory and 76Kbytes of SRAM requiring no external


    Original     		S5L840F) S5L840F 76Kbytes 16bit CALMRISC16TM) 24bit MAC2424 CalmRISC16) s5l840fx calmRISC16 P9336 and pin diagram of MMC 4017 CalmRISC-16 player audio to flash memoy s5l8 samsung i2s S5H5002 PDF

    SA153

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 128M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ128B-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V


    Original     		MB84VZ128B-70 115-ball F0211 MB84VZ128B SA153 PDF

    012F

    Abstract: reset nand flash 804aH
    Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.0 Date: August 4th, 2004 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY Document Title MuxOneNAND


    Original     		MuxOneNAND512 KFM1216Q2M) KFM1216Q2M 48FBGA 512Mb 012F reset nand flash 804aH PDF

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G PDF

    Spansion gl128

    Abstract: sa5888 SPANSION gl512 27631 S29PL127J S75PL127J S75PL127JBD Spansion s29pl127j GL128 GL512
    Text: S75PL127J MCPs Stacked Multi-Chip Product MCP CODE Flash, pSRAM and DATA Flash 128M (8M x 16-Bit CMOS 3.0 VoltOnly, Simultaneous Operation, Page Mode CODE Flash Memory, with 64M/32M (4M/2M x 16-Bit) pSRAM and 512M/256/128M (32M/16M/8M x 16Bit) Data Flash Memory


    Original     		S75PL127J 16-Bit 64M/32M 16-Bit) 512M/256/128M 32M/16M/8M 16Bit) 110ns Spansion gl128 sa5888 SPANSION gl512 27631 S29PL127J S75PL127JBD Spansion s29pl127j GL128 GL512 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    OTO70

    Abstract: No abstract text available
    Text: rfb FLASH MEMORY ☆ New product * Under developm ent • FLASH MEMORIES Continued <Boot Block*4 Smart Voltage Flash Memory> Capacity 4M 8M 16M Bit configuration x 16 x 16 x 16 Block configuration Access time (ns) MAX. (Vcc =5 V) Model No. Supply voltage


    OCR Scan     		LH28F400BGE/N/B-TL85/TL12 LH28F400BGHE/B-TL85/TL12 LH28F400BGE/N/B-BL85/BL12 LH28F400BGHE/B-BL85/BL12 OTO70 PDF

    Samsung oneNand Mux

    Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
    Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		MuxOneNAND512 KFM1216Q2M) MuxOneNAND512 KFM1216Q2M 48FBGA 512Mb Samsung oneNand Mux samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins PDF

    10072h

    Abstract: structure chart of samsung company
    Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		MuxOneNAND512 KFM1216Q2M) KFM1216Q2M 48FBGA 512Mb 10072h structure chart of samsung company PDF

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand PDF

    BA114

    Abstract: BA107 samsung ba92 BA122
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 48FBGA 047MAX BA114 BA107 samsung ba92 BA122 PDF

    BA961

    Abstract: BA43 48FBGA samsung nor flash ba107
    Text: K8D6x16UTM / K8D6x16UBM NOR FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1


    Original     		K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 48FBGA 047MAX BA961 BA43 samsung nor flash ba107 PDF

    BA107

    Abstract: ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 48FBGA 047MAX BA107 ba4901 ba741 BA115 ba901 BA5101 BA100 diode BA102 BA116 ba941 PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary


    Original     		K8D1716UTC K8D1716UBC 48TSOP1 48FBGA 047MAX 48-Ball PDF

    BA37

    Abstract: ba37 diode K8D1716UBC 48FBGA K8D1716U K8D1716UTC samsung nor flash BA2411 150us
    Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary


    Original     		K8D1716UTC K8D1716UBC 48TSOP1 48FBGA 047MAX 48-Ball BA37 ba37 diode K8D1716UBC K8D1716U samsung nor flash BA2411 150us PDF

    48FBGA

    Abstract: BGA24 ba3101 BA4910 ba4410 BA4111
    Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package


    Original     		K8D3x16UTC K8D3x16UBC 48TSOP1 16M/16M 48FBGA 08MAX BGA24 ba3101 BA4910 ba4410 BA4111 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations


    Original     		IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 14x20mm) IS29GL256-JILE 11x13mm) IS29GL256-JELA* PDF

    Untitled

    Abstract: No abstract text available
    Text: IS29GL128 128 Megabit 16384K x 8-bit / 8192K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations


    Original     		IS29GL128 16384K 8192K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 14x20mm) IS29GL128-JILE 11x13mm) PDF

    TC58FVM7T2ATG65

    Abstract: TC58FVM7B2ATG65 lba99 BA127 BA234 TC58FVM7B2A TC58FVM7T2A TC58FVM7T TC58FVM7T2 TC58FVM7T2ATG
    Text: TC58FVM7T2ATG65/TC58FVM7B2ATG65 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS / 8M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized


    Original     		TC58FVM7T2ATG65/TC58FVM7B2ATG65 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA134 BA135 BA230 BA231 TC58FVM7T2ATG65 TC58FVM7B2ATG65 lba99 BA127 BA234 TC58FVM7B2A TC58FVM7T2A TC58FVM7T TC58FVM7T2 TC58FVM7T2ATG PDF

    Untitled

    Abstract: No abstract text available
    Text: IS29GL128 128 Megabit 16384K x 8-bit / 8192K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only PRELIMINARY DATASHEET FEBRUARY 2013 FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations


    Original     		IS29GL128 16384K 8192K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 14x20mm) IS29GL128-JILE 11x13mm) PDF

    EN29LV640AB

    Abstract: EN29LV640AT marking SG32 66-SA 56-SA 60-SA 76-SA 88-SA en29lv640A 68-SA
    Text: EN29LV640A EN29LV640A 64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • JEDEC Standard compatible • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations


    Original     		EN29LV640A 16-bit) EN29LV640A EN29LV640AB EN29LV640AT marking SG32 66-SA 56-SA 60-SA 76-SA 88-SA 68-SA PDF

    ba37

    Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
    Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary


    Original     		K8D1716UTC K8D1716UBC 48TSOP1 48FBGA 047MAX 48-Ball ba37 K8D1716U K8D1716UBC samsung nor flash BA251 PDF

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 PDF