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Tai-Saw Technology Co Ltd TZ1618EABA43 26/10/9/2.0X1.6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TZ1618EABA43	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.69014	Buy Now
	TZ1618EABA43	Cut Tape	3,000		1	1 $1.14 10 $0.984 100 $0.8483 1000 $0.73255 10000 $0.73255	Buy Now
	TZ1618EABA43	Digi-Reel	3,000		1	1 $1.14 10 $0.984 100 $0.8483 1000 $0.73255 10000 $0.73255	Buy Now
C&K K5V1BA43TP3S SWITCH TACTILE SPDT 0.1A 32V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	K5V1BA43TP3S	Tray	1,694		1	1 $9.6 10 $7.782 100 $9.6 1000 $5.01884 10000 $5.01884	Buy Now
Mouser Electronics	K5V1BA43TP3S					1 - 10 - 100 - 1000 - 10000 $6.51	Get Quote
Schneider Electric ZBA434 RED CAP MARKED STOP FOR CIRCULAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZBA434	Box	40		1	1 $7.03 10 $5.581 100 $4.3754 1000 $4.2 10000 $4.2	Buy Now
Mouser Electronics	ZBA434		12			1 $5.7 10 $5.51 100 $4.44 1000 $4.09 10000 $4.09	Buy Now
Newark	ZBA434	Bulk			10	1 - 10 $4.93 100 $3.46 1000 $3.11 10000 $3.11	Buy Now
RS	ZBA434	Bulk	10	1 Weeks	1	1 $5.76 10 $5.76 100 $5.76 1000 $5.76 10000 $5.76	Buy Now
TME	ZBA434				1	1 $2.4 10 $2.1 100 $2.1 1000 $2.1 10000 $2.1	Get Quote
Schneider Electric XB4BA43225 PUSH BUTTON, HARMONY XB4, RED OP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XB4BA43225	Box	4		1	1 $47.85 10 $46.3 100 $46.3 1000 $47.85 10000 $47.85	Buy Now
Mouser Electronics	XB4BA43225					1 $47.1 10 $43.79 100 $42.81 1000 $42.81 10000 $42.81	Get Quote
Newark	XB4BA43225	Bulk			1	1 $52.47 10 $44.83 100 $35.41 1000 $34.64 10000 $34.64	Buy Now
Schneider Electric ZB4BA434 CONFIG SW BODY PUSHBUT NON-ILLUM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZB4BA434	Box	2		1	1 $27.5 10 $21.699 100 $18.6 1000 $18.6 10000 $18.6	Buy Now
Mouser Electronics	ZB4BA434		21			1 $19.89 10 $19.89 100 $16.91 1000 $15.97 10000 $15.97	Buy Now
Newark	ZB4BA434	Bulk	2		1	1 $20.35 10 $20.35 100 $20.35 1000 $20.35 10000 $20.35	Buy Now
TME	ZB4BA434		18		1	1 $9.41 10 $8.3 100 $8.3 1000 $8.3 10000 $8.3	Buy Now

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BA43 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LTN150XG-L05 Abstract: ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756 Text: Main System Option SESC code Location 0902-001841 1105-001609 3903-000055 BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A BA43-00155A BA44-00132A BA44-00162A BA44-00205A BA44-00209A BA44-00211A	Original	BA31-00025A BA31-00026A BA39-00527A BA39-00528A BA39-00533A BA39-00540A BA41-00568A BA41-00569A BA42-00161A BA42-00162A LTN150XG-L05 ZD600 c828* npn W316 bag c836 BA59-01664A 1608 F 100nF cpu fan sepa LTN150XG R756	PDF
Untitled Abstract: No abstract text available Text: BA430-80 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)6.0	Original	BA430-80 Voltage800 Current10u	PDF
SCB-1700N Abstract: SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List Level Code 1 BA44-00264A 1 Assembled ADAPTOR 1 BA43-00212A 1 BATTERY 1 BA43-00220A	Original	BA44-00264A BA43-00212A BA43-00220A BA43-00221A BA43-00222A BA46-08356A BA46-09951A BA46-10898A BA99-14031A BA68-03029A SCB-1700N SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C	PDF
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor	PDF
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX	PDF
T9550 Abstract: intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41 Text: Intel Core 2 Duo Mobile Processor, Intel® Core™2 Solo Mobile Processor and Intel® Core™2 Extreme Mobile Processor on 45-nm Process Datasheet For platforms based on Mobile Intel® 4 Series Express Chipset Family March 2009 Document Number: 320120-004	Original	45-nm T9550 intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41	PDF
transistor bl p89 Abstract: bl p74 transistor J955 XC4000 XC4000A XC4000D XC4000E XC4000EX XC4000H p180 g8 Text: book XC4000E and XC4000X Series Field Programmable Gate Arrays R January 29, 1999 Version 1.5 6* XC4000E and XC4000X Series Features Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series. XC4000X Series devices described in this data sheet	Original	XC4000E XC4000X XC4000 XC4000EX XC4000XL transistor bl p89 bl p74 transistor J955 XC4000A XC4000D XC4000H p180 g8	PDF
P-TFBGA63-0911-0 Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112 Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112	PDF
U2 A47 Abstract: BG29 AR47 aa47 bc33 AH35 AK33 be25 AC45 AG47 Text: EP20K400 Device Pin-Outs ver. 1.0 Pin Name 1 MSEL0 (2) MSEL1 (2) nSTATUS (2) nCONFIG (2) DCLK (2) CONF_DONE (2) INIT_DONE (3) nCE (2) nCEO (2) nWS (4) nRS (4) nCS (4) CS (4) RDYnBSY (4) CLKUSR (4) DATA7 (4) DATA6 (4) DATA5 (4) DATA4 (4) DATA3 (4) DATA2 (4)	Original	EP20K400 652-Pin U2 A47 BG29 AR47 aa47 bc33 AH35 AK33 be25 AC45 AG47	PDF
Untitled Abstract: No abstract text available Text: Mobile 3rd Generation Intel Core Processor Family, Mobile Intel® Pentium® Processor Family, and Mobile Intel® Celeron® Processor Family Datasheet, Volume 1 of 2 June 2013 Document Number: 326768-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,	Original		PDF
EPF10K50S Abstract: EPF10K100B EPF10K100E EPF10K130E EPF10K200E EPF10K30E EPF10K50E FLEX controller vhdl code Text: FLEX 10KE Embedded Programmable Logic Family September 2000, ver. 2.10 Features. Data Sheet • ■ ■ f Embedded programmable logic devices PLDs , providing system-on-a-programmable-chip integration in a single device – Enhanced embedded array for implementing megafunctions	Original	16-bit EPF10K50S EPF10K100B EPF10K100E EPF10K130E EPF10K200E EPF10K30E EPF10K50E FLEX controller vhdl code	PDF
BA102 Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96	PDF
SAMSUNG MCP Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5 Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary	Original	K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 512tRDR 69-Ball 08MAX SAMSUNG MCP samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5	PDF
Untitled Abstract: No abstract text available Text: Pin Information for the Stratix V 5SGXA5 Device Version 1.2 Note 1 Bank Number GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1	Original	F1932	PDF

C9715 Abstract: ti f32 EPF10K10 EPF10K10A EPF10K20 EPF10K30 EPF10K30A EPF10K40 EPF10K50 EPF10K100-1 Text: FLEX 10K Embedded Programmable Logic Family Data Sheet FLEX 10K エンベデッド・プログラマブル・ロジック・ファミリ 1998年 1 月 ver.3 特長 Data Sheet • ■ ■ シングル・デバイス内にシステム機能が集積化できる業界初のエンベ	Original	960RAM 048RAM 1-1990JTAG EPF10K10 EPF10K10A EPF10K20 EPF10K30 EPF10K30A EPF10K30B EPF10K40 C9715 ti f32 EPF10K10 EPF10K10A EPF10K20 EPF10K30 EPF10K30A EPF10K40 EPF10K50 EPF10K100-1	PDF
BA102 Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for	Original	TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65	PDF
ba60 Abstract: TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5 Text: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable	Original	TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, ba60 TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5	PDF
diode ak38 Abstract: F1517 AK39 s av36 aw7 diode Text: Pin Information for the Stratix IV GT EP4S100G5ES1 Device Version 1.2 Notes 1 , (2), (3), (4) WARNING: For ES1 silicon only Bank Number VREF 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A	Original	EP4S100G5ES1 F1932 PT-EP4S100G5ES1-1 11pins F1932. diode ak38 F1517 AK39 s av36 aw7 diode	PDF
TH50VSF3581AASB Abstract: A12F TH50VSF3580AASB Text: TH50VSF3580/3581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3580/3581AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	TH50VSF3580/3581AASB TH50VSF3580/3581AASB 608-bit 432-bit 69-pin 3/3581AASB XXXh/60h) BPA/60h) TH50VSF3581AASB A12F TH50VSF3580AASB	PDF
TFBGA56 Abstract: No abstract text available Text: TC58FVT321/B321FT/XB-70,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT 4M x 8 BITS / 2M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	TC58FVT321/B321FT/XB-70 32-MBIT TC58FVT321/B321 432-bit, TFBGA56	PDF
AH40 Abstract: AW33 AA41 BC35 EPF8050M Text: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device	OCR Scan	EPF8050M 8000M EPF81188 30-MHz EPF8050M 560-pin 26-inch 50-mil AH40 AW33 AA41 BC35	PDF
XAPP031 Abstract: No abstract text available Text: £ XILINX XC4000E and XC4000X Series Field Programmable Gate Arrays November 10,1997 Version 1.4 Product Specification XC4000E and XC4000X Series Features Low-Voltage Versions Available Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series.	OCR Scan	XC4000E XC4000X XC4000 XC4000EX XC4000XL XAPP031	PDF
Untitled Abstract: No abstract text available Text: XILIU001 £ XILINX XC4000 Series Table of Contents XC4000E and XC4000X Series Field Programmable Gate Arrays XC4000E and XC4000X Series Features. 3 Low-Voltage Versions A vailable. 3	OCR Scan	XILIU001 XC4000 XC4000E XC4000X	PDF
XX11X Abstract: 242690 Pentium Pro exfo 82453KX Text: PENTIUM PRO PROCESSOR WITH 1 MB L2 CACHE AT 200 MHZ • Large integrated cache for multiprocessing systems ■ ■ ■ Binary compatible with applications running on previous members of the Intel microprocessor family Separate dedicated external system bus, and dedicated internal full-speed	OCR Scan	32-bit XX11X 242690 Pentium Pro exfo 82453KX	PDF

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BA43 Search Results

BA43 Price and Stock

Tai-Saw Technology Co Ltd TZ1618EABA43

C&K K5V1BA43TP3S

Schneider Electric ZBA434

Schneider Electric XB4BA43225

Schneider Electric ZB4BA434

BA43 Datasheets Context Search

LTN150XG-L05

Untitled

SCB-1700N

SAMSUNG MCP

Untitled

T9550

transistor bl p89

P-TFBGA63-0911-0

U2 A47

Untitled

EPF10K50S

BA102

SAMSUNG MCP

Untitled

C9715

BA102

ba60

diode ak38

TH50VSF3581AASB

TFBGA56

AH40

XAPP031

Untitled

XX11X